VS-8EWS08S-M3, VS-8EWS12S-M3
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Revision: 19-Jan-17 1Document Number: 93383
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High Voltage Surface Mountable Input Rectifier Diode, 8 A
FEATURES
Glass passivated pellet chip junction
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Input rectification
Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
The VS-8EWS..S-M3 rectifier high voltage series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
The high reverse voltage range available allows design of
input stage primary rectification with outstanding voltage
surge capability.
Note
•T
A = 55 °C, TJ = 125 °C, footprint 300 mm2
PRODUCT SUMMARY
Package TO-252AA (D-PAK)
IF(AV) 8 A
VR800 V, 1200 V
VF at IF1.1 V
IFSM 150 A
TJ max. 150 °C
Diode variation Single die
Base
cathode
+
2
13
A
node --
Anode
1
2
3
TO-252AA (D-PAK)
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper 1.2 1.6
A
Aluminum IMS, RthCA = 15 °C/W 2.5 2.8
Aluminum IMS with heatsink, RthCA = 5 °C/W 5.5 6.5
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 8 A
VRRM 800/1200 V
IFSM 150 A
VF8 A, TJ = 25 °C 1.10 V
TJ-55 to +150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-8EWS08S-M3 800 900 0.5
VS-8EWS12S-M3 1200 1300
VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com Vishay Semiconductors
Revision: 19-Jan-17 2Document Number: 93383
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 8
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 125
10 ms sine pulse, no voltage reapplied 150
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 78 A2s
10 ms sine pulse, no voltage reapplied 110
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 1100 A2s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 8 A, TJ = 25 °C 1.1 V
Forward slope resistance rtTJ = 150 °C 20 m
Threshold voltage VF(TO) 0.82 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM
0.05 mA
TJ = 150 °C 0.50
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -55 to +150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 2.5
°C/W
Typical thermal resistance,
junction to ambient (PCB mount) RthJA (1) 62
Approximate weight 1g
0.03 oz.
Marking device Case style TO-252AA (D-PAK) 8EWS08S
8EWS12S
VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com Vishay Semiconductors
Revision: 19-Jan-17 3Document Number: 93383
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
90
80
130
140
150
120
110
100
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
210 12
468
0
30°
60° 90° 120° 180°
8EWS. Series
RthJC (DC) = 2.5 °C/W
Conduction angle
Ø
90
140
150
130
120
110
100
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
4268 16 18
10 12 14
0
DC
30°
60°
90°
120° 180°
8EWS. Series
RthJC (DC) = 2.5 °C/W
Ø
Conduction period
8
6
4
2
0
10
12
14
16
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
4268
10
0
RMS limit
180°
120°
90°
60°
30°
8EWS. Series
TJ = 150 °C
Conduction angle
Ø
8
6
4
2
0
10
12
14
16
18
20
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
246 14 16
81012
0
DC
180°
120°
90°
60°
30° RMS limit
8EWS. Series
TJ = 150 °C
Ø
Conduction period
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude
Half Cycle Current Pulses (N)
1 10 100
30
40
50
60
70
80
90
100
110
120
130
140
VS-8EWS08S .. Series
At any rated load condition and with
rated Vrrm applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.01 0.1 1 10
20
40
60
80
100
120
140
160
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = TJ max.
No voltage reapplied
Rated Vrrm reapplied
VS-8EWS08S .. Series
VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com Vishay Semiconductors
Revision: 19-Jan-17 4Document Number: 93383
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
1
10
100
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
1.00.5 1.5 2.0 2.5 3.0
0
TJ = 25 °C
TJ = 150 °C
8EWS. Series
VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com Vishay Semiconductors
Revision: 19-Jan-17 5Document Number: 93383
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-8EWS08S-M3 75 3000 Antistatic plastic tubes
VS-8EWS08STR-M3 2000 2000 13" diameter reel
VS-8EWS08STRL-M3 3000 3000 13" diameter reel
VS-8EWS08STRR-M3 3000 3000 13" diameter reel
VS-8EWS12S-M3 75 3000 Antistatic plastic tubes
VS-8EWS12STR-M3 2000 2000 13" diameter reel
VS-8EWS12STRL-M3 3000 3000 13" diameter reel
VS-8EWS12STRR-M3 3000 3000 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95627
Part marking information www.vishay.com/doc?95176
Packaging information www.vishay.com/doc?95033
1-Vishay Semiconductors product
2- Current rating (8 = 8 A)
3- Circuit configuration:
E = single diode
4- Package:
W = D-PAK
5- Type of silicon:
S = standard recovery rectifier
6- Voltage code x 100 = VRRM
7- S = surface mountable
8- TR = tape and reel
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
08 = 800 V
12 = 1200 V
- Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
9
Device code
51 32 4 6 7 8 9
VS- 8 E W S 12 S TR -M3
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 24-Jun-16 1Document Number: 95627
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC® outline TO-252AA
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 10° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 15° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
Ø 1
E
(5)
b3 (3) 0.010 CAB
L3 (3)
B
AC
H
C
L2
D (5)
L4
b
2 x e
b2
(2) L5
123
4
Ø 2
A
c2 A
A
H
Seating
plane
c
Detail “C”
(7)
Seating
plane
A1
Detail “C”
Rotated 90 °CW
Scale: 20:1
(L1)
C
C
L
Ø
Gauge
plane
Lead tip
M
0.010 CAB
M
32
4
1
E1
D1
MIN.
0.265
(6.74)
MIN.
0.245
(6.23)
MIN.
0.089
(2.28)
MIN.
0.06
(1.524)
0.488 (12.40)
0.409 (10.40)
0.093 (2.38)
0.085 (2.18)
Pad layout
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Revision: 08-Feb-17 1Document Number: 91000
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