Order this document by BC368/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 2 COLLECTOR 2 3 BASE 3 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 20 Vdc Collector - Emitter Voltage VCES 25 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg - 55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 14 TO-92 (TO-226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector - Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 20 -- -- Vdc Collector - Base Breakdown Voltage (IC = 100 A, IE = 0 ) V(BR)CBO 25 -- -- Vdc Emitter - Base Breakdown Voltage (IE = 100 A, IC = 0) V(BR)EBO 5.0 -- -- Vdc Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150C) ICBO -- -- -- -- 10 1.0 Adc mAdc Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO -- -- 10 Adc 50 85 60 -- -- -- -- 375 -- Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) (VCE = 1.0 V, IC = 1.0 A) Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) hFE -- fT 65 -- -- MHz Collector-Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VCE(sat) -- -- 0.5 V Base-Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) VBE(on) -- -- 1.0 V Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) hFE, CURRENT GAIN 200 100 70 50 VCE = 1.0 V TJ = 25C 20 10 20 200 50 100 IC, COLLECTOR CURRENT (mA) 500 1000 TJ = 25C 0.8 0.6 50 mA 1000 mA 0.2 20 50 100 -0.8 VB , TEMPERATURE COEFFICIENT (mV/ C) TJ = 25C VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 250 mA Figure 2. Collector Saturation Region 1.0 VBE(on) @ VCE = 1.0 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) -1.2 -1.6 -2.0 VB for VBE -2.4 -2.8 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Figure 4. Temperature Coefficient Figure 3. "On" Voltages 300 160 TJ = 25C 200 C, CAPACITANCE (pF) f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) 500 mA IC = 10 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) Figure 1. DC Current Gain 2 100 mA 0.4 100 70 VCE = 10 V TJ = 25C f = 20 MHz 50 30 10 20 50 120 80 Cibo 40 Cobo 100 200 500 1000 0 Cobo Cibo 5.0 1.0 10 2.0 15 3.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current-Gain -- Bandwidth Product Figure 6. Capacitance 20 4.0 25 5.0 Motorola Small-Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD Motorola Small-Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE 3 Motorola reserves the right to make changes without further notice to any products herein. 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