1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Emitter Voltage VCES 25 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC1.0 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watt
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, IB = 0) V(BR)CEO 20 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100 µA, IE = 0 ) V(BR)CBO 25 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 100 µA, IC = 0) V(BR)EBO 5.0 — — Vdc
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150°C)
ICBO —
——
—10
1.0 µAdc
mAdc
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0) IEBO — — 10 µAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
(VCE = 1.0 V, IC = 0.5 A)
(VCE = 1.0 V, IC = 1.0 A)
hFE 50
85
60
—
—
—
—
375
—
—
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) fT65 — — MHz
Collector–Emitter Saturation V oltage (IC = 1.0 A, IB = 100 mA) VCE(sat) — — 0.5 V
Base–Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) VBE(on) — — 1.0 V
Order this document
by BC368/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
123
Voltage and current are negative
for PNP transistors
Motorola, Inc. 1996
COLLECTOR
2
3
BASE
1
EMITTER
COLLECTOR
2
3
BASE
1
EMITTER
NPN PNP
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
160
40
0
VR, REVERSE VOLTAGE (VOL TS)
Figure 4. Temperature Coefficient
–0.8
IC, COLLECTOR CURRENT (mA)
Figure 5. Current–Gain — Bandwidth Product
Cobo
Cibo 5.0
1.0
–2.4
–2.0
–1.2
VCE, COLLECTOR VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)
°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001.0
1.0
0.8
0.6
0.4
0.2
01.0 10 1000100
10
2.0
TJ = 25
°
C
IC = 10 mA
TJ = 25
°
C
VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10
θ
VB for VBE
Cibo
hFE, CURRENT GAIN
200
20 100010 50 100
100
20
VCE = 1.0 V
TJ = 25
°
C
70
50
200 500 0.02 0.05 0.2 0.5 2.0 5.0 20 50
50 mA
100 mA
250 mA
500 mA 1000 mA
2.0 5.0 20 50 200 500
–1.6
–2.81.0 10 10001002.0 5.0 20 50 200 500
120
80
15
3.0 20
4.0 25
5.0
TJ = 25
°
C
Cobo
300
70
30
IC, COLLECTOR CURRENT (mA)
Figure 6. Capacitance
10 20 50
200
100
100 200 500
fT, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
50
1000
VCE = 10 V
TJ = 25
°
C
f = 20 MHz
VBE(sat) @ IC/IB = 10
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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