\ | 7964142 SAMSUNG SEMICONDUCTOR INC 98D 05089. DT 37-7 ie WB ODE i 7964142 00050849 1 i Woe So a , IRF220/221/222/223 POWER MOSFETS FEATURES Low Rpsjon) Improved inductive ruggedness TO-3 Fast switching times Rugged polysilicon gate cell structure Low input capacitance * Extended safe operating area | Improved high temperature reliability ) TO-3 package (Standard) PRODUCT SUMMARY Part Number Vos Rosion} lo pD IRF220 200V 0.800 5.0A i IRF221 150v | o.80n | 5.0A LF G IRF222 200V 1.29 4.0A : bs IRF223 150V 1.29 4.0A MAXIMUM RATINGS Characteristic Symbol IRF220 IRF221 IRF222 IRF223 Unit Drain-Source Voltage (1) Voss 200 150 200 150 Vde Drain-Gate Voltage (Ras=1.0MQ) (1), Vocr 200 150 200 150 Vde Gate-Source Voltage Ves +20 Vdc Continuous Drain Current Tc=25C Ib 5.0. 6.0 4.0 4.0 Adc Continuous Drain Current Tc=100C | Ib 3.0 3.0 2.0 2.0 Ade Drain CurrentPulsed (3) lom 20 20 4 6 16 Adc Gate CurrentPulsed fam #1.5 Adc Total Power Dissipation @ Tc =25C Pp 40 Watts Derate above 25C - . 0.32 W/C Operating and Storage _ : Junction Temperature Range Tu. Tstg 55 to 150 c Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5 seconds Th 300 S Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300pus, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature cb SAMSUNG SEMICONDUCTOR . 88 __-7964142 SAMSUNG SEMICONDUCTOR INC 98D. 05090. D T*39=I/. we ee TE AG DE Bf raeuaye o00gs0450 4 i votre N-CHANNEL ~~ IRF220/221/222/223 - oO POWER MOSFETS ELECTRICAL CHARACTERISTICS cc=25C unless otherwise specified) Characteristic Symbo!! Type | Min} Typ| Max [Units Test Conditions IRF220 IRF222/200} | | V |Vas=OV Drain-Source Breakdown BVpss Voltage IRF221 160 VV {lp=250, IRF223 | 7. p=250pA Gate Threshold Voltage Vesitn | ALL |2.0] } 4.0 | V_ |Vos=Vas, Ib=250uA Gate-Source Leakage Forward| Iss ALL | | | 100] nA |Vas=20V Gate-Source Leakage Reverse! lass ALL | | |-100] nA |Ves=-20V Zero Gate Voltage loss AL LOLS 250 | yA |Vps=Max. Rating, Ves=OV Drain Current | [1000] yA |Vos=Max. RatingX0.8, Ves=O0V, Tc=125C On-State Drain-Source , Reza S0)-|} | 4 n-State Drain- : - . { Vps>I XR . Vas=10V Current (2) On ir 222) aloes iRF223| 9} | IRF220 . . 1/04/08) Static Drain-Source On-State | p IRF221 Ves=10V, Ip=2.5A . DSton) es=10V, Ip=2. Resistance (2) IRF222 ; IRF223} ~ 0.8) 1.2 Q Forward Transconductance (2)| gts ALL /1.31;2.6! 3 Vos>lojon)XRosion) max., Ip=2.5A Input Capacitance Cis ALL | |450} 600 | pF Output Capacitance Coss ALL | |160] 300 | pF |Ves=OV, Vos=25V, f=1.0MHz Reverse Transfer Capacitance; Cres ALL | | 50} 80 pF Turm-On Delay Time taony | ALL | | ] 40 | ns Rise Time tr au | |I| 60 | ng | Voo=0-5BVoss, b=2.5A, Zo=500 (MOSFET switching times are essentially Tum-Off Delay Time tao | ALL | | j{ 700 | nS Jindependent of operating temperature. ) Fall Time tr ALL |; | J{ 60 ns Total Gate Charge , (Gate-Source Plus Gate-Drain)| Ga | ALL | 12.8 18 | nC Ivgs=10V, Ip=6.0A, Vos=0.8 Max. Rating (Gate charge Is essentially independent of Gate-Source Charge Cos ALL | [4.0] | nc operating temperature. ) Gate-Drain (Miller} Charge Qoa AL | (8.6) nc THERMAL RESISTANCE Junction-to-Case Rince ; ALL | | [3.12 | KAW . Case-to-Sink : Rincs | ALL | |0.1] ~ | K/W |Mounting surface flat, smooth, and greased Junction-to-Ambient Rina ALL | | | 30 [| K/W [Free Air Operation Notes: (1) Tu=25C to 150C (2) Pulse test: Pulse width<300ps, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature c68 samsune SEMICONDUCTOR 89i E 7984142. SAMSUNG SEMICONDUCTOR ING ss $8 05091, _ D TAAL - po ODE | 74buu2 OOOSO%) O oo N-CHANNEL IRF220/221/222/223 / POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Symbol; Type |Min|Typ| Max |Units Test Conditions . . (RF220; | _ | so A Continuous Source Current Is IRF221 (Body Diode) : heaps !|-| 40 A |Modified MOSFET symbol! D / - - = : showing the integral 6 & . : IRF220| _ | _ | 90 | a {reverse P-N junction rectifier S ( Pulse Source Current font IRF221 ! (Body Diode) (3) - IRF222 |e 16 A IRF223 . nEeor| | | 2:0 | V |Te=25C, t5=5.0A, Ves=0V | _ {Diode Forward Voltage (2) Vep IRF220 o . . . _ lipree3| 7 | 7 1.8 V iTco=25C, Is=4.0A, Ves=0V Reverse Recovery Time tr ALL | (350; ns |} Ty=150C, Ir=5.0A, di-/dt= 100A/ps Notes: (1) Tj=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ~ 10 a 2 @ wi fi = a 2 = =< < 6 Ee FA 5 c wu = & 3 3 =z 4 Zz = = a a 2 s$ 2 : 9 20 o 2 4 8 10 12 14 \ Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) : Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typicat Transfer Characteristics 10 107 5 1S UMITED BY 8 IRF 1 a 2 e e : 3 z 5 <x 5 3 4 6 z z = < g 5 a 4 0 2 4 10 "4.0 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS} Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics Maximum Safe Operating Area + ce SAMSUNG SEMICONDUCTOR 90O98 4.442 SAMSUN Gq. SEMICONDUCTOR INC 98D 05092 | DBD | T-39-) eee a ag DEB raesuee, oooso42 1 td 1. Outy Factor, ont 2) Per Und Baso= Fine =3.12 Deg 3. TaTom Pou Zac (H THERMAL, IMPEDANCE (PEA UNIT) ZauetWRyuc NORMALIZED EFFECTIVE TRANSIENT 11, SQUARE WAVE PULSE DURATION (SECONDS) . Maximum Effective Transient Therma! impedance Junction-to-Case Vs. Pulse Duration 65 a gis, TRANSCONDUCTANCE (SIEMENS) a fon, REVERSE DRAIN CURRENT (AMPERES) a Ty= 160C 25C o 1 2 3 4 6 6 Vso, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical SourceDrain Diode Forward Voltage Q 2 4 6 8 10 Ip, DRAIN CURRENT (AMPERES) Typtcal Transconductance Vs. Drain Current 4.25 2.6 4A5 an db 0.85 05 BVpss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Rosion, DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2 Q 5 -40 0 40 80 120 180 -40 0 120 160 . Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normalized On-Resistance Vs. Temperature EB SAMSUNG SEMICONDUCTOR 1- 9641 48 Pn ne eee 42 SAMSUNG SFEMICONNDIICTOR TN Rosioa DRAIN-TO-SOURCE ON RESISTANCE (OHMS) DEM ?9b414e 0005093 3 IRF220/221/222/223 25 5 g - z 5 5 3 3 i 3: 8 6 > 10 20 30 50 Yous, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Capacitance Vs. Drain to Source Voltage 0 Vos 10 (p, DRAIN CURRENT (AMPERES) 5 10 15 20 tp, CRAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Currant 25 Pp, POWER DISSIPATION (WATTS) o 0 25 05093 D T*34-ll, N-CHANNEL POWER MOSFETS 98D. Ves 40 Vos # T00V, 4 8 12 16 20 Qy, TOTAL GATE CHARGE (nC) Typical Gate Charge Vs. Gate-To-Source Voltage 50 76 100 125 Ta, AMBIENT TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature 150 a +) 0 20 40 60 80 100 120 140 160 Ta, AMBIENT TEMPERATURE (C) Power Vs. Temperature Derating Curve gas SAMSUNG SEMICONDUCTOR 92