Document Number: 94091 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 26-Apr-10 1
Fast Soft Recovery Rectifier Diode, 10 A
VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products
FEATURES
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• Designed and qualified for industrial level
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
DESCRIPTION
The VS-10ETF..SPbF fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRODUCT SUMMARY
VRRM 200 V to 600 V
VF at 10 A < 1.2 V
trr 50 ns
D
2
PAK (SMD-220)
Base
common
cathode
+
3
Anode
2
1
Anode --
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
VRRM 200 to 600 V
IF(AV) Sinusoidal waveform 10 A
IFSM 150
trr 1 A, 100 A/μs 50 ns
VF10 A, TJ = 25 °C 1.2 V
TJRange - 40 to 150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-10ETF02SPbF 200 300
2VS-10ETF04SPbF 400 500
VS-10ETF06SPbF 600 700
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 128 °C, 180° conduction half sine wave 10
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 150
10 ms sine pulse, no voltage reapplied 160
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 112.5 A2s
10 ms sine pulse, no voltage reapplied 160
Maximum I2√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 1125 A2√s
www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94091
2Revision: 26-Apr-10
VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products Fast Soft Recovery
Rectifier Diode, 10 A
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 10 A, TJ = 25 °C 1.2 V
Forward slope resistance rtTJ = 150 °C 12.7 mΩ
Threshold voltage VF(TO) 1.25 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM 0.1 mA
TJ = 150 °C 2.0
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time trr IF at 10 Apk
25 A/μs
25 °C
145 ns
Reverse recovery current Irr 2.75 A
Reverse recovery charge Qrr 0.32 μC
Snap factor S 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 150 °C
Maximum thermal resistance
junction to case RthJC DC operation 1.5
°C/W
Maximum thermal resistance
junction to ambient (PCB mount) RthJA (1) 40
Soldering temperature TS 240 °C
Approximate weight 2g
0.07 oz.
Marking device Case style D2PAK (SMD-220)
10ETF02S
10ETF04S
10ETF06S
IFM trr
dir
dt
IRM(REC)
Qrr
t
Document Number: 94091 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 26-Apr-10 3
VS-10ETF..SPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 10 A Vishay High Power Products
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
06
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
4
28
10 12
120
125
130
135
140
145
150
60°
30° 90° 180°
10ETF..S Series
RthJC (DC) = 1.5 °C/W
120°
Conduction angle
Ø
010
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
6
212
16
48 14
120
125
130
135
140
145
150
60°
30° 180°
DC
90°
120°
10ETF..S Series
RthJC (DC) = 1.5 °C/W
Ø
Conduction period
4
0
16
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
8
10
10
10ETF..S Series
TJ = 150 °C
12
8
46
180°
RMS limit
Conduction angle
2
2
6
14
60°
30°
90°
120°
Ø
4
0
20
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
12
12
16
10ETF..S Series
TJ = 150 °C
16
8
Ø
Conduction period
DC
48
60°
30°
180°
90°
120°
RMS limit
160
80
40
1 10 100
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
140
60
100
120
10ETF..S Series
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated VRRM applied following surge.
180
80
40
0.01 0.1 1
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
140
60
100
120
10ETF..S Series
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
Maximum non-repetitive surge current
versus pulse train duration.
160
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4Revision: 26-Apr-10
VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products Fast Soft Recovery
Rectifier Diode, 10 A
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
100
10
1
0.5 1.0 1.5 2.0 2.5 3.0
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
TJ = 150 °C
TJ = 25 °C
10ETF..S Series
0.20
0.15
0
0 40 80 120 160 200
trr - Maximum Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
10ETF..S Series
TJ = 25 °C
0.05
0.10
IFM = 20 A
IFM = 1 A
IFM = 10 A
IFM = 5 A
IFM = 2 A
0.4
0.3
0
0 40 80 120 160 200
trr - Maximum Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
10ETF..S Series
TJ = 150 °C
0.1
0.2
IFM = 20 A
IFM = 1 A
IFM = 10 A
IFM = 5 A
IFM = 2 A
1.4
0.6
0
0 40 80 120 160 200
Qrr - Maximum Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
10ETF..S Series
TJ = 25 °C
0.2
0.4
1.0
0.8
1.2 IFM = 20 A
IFM = 1 A
IFM = 10 A
IFM = 5 A
IFM = 2 A
2.5
1.5
0
0 40 80 120 160 200
Qrr - Maximum Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
10ETF..S Series
TJ = 150 °C
0.5
1.0
2.0
IFM = 20 A
IFM = 1 A
IFM = 10 A
IFM = 5 A
IFM = 2 A
15
9
0
0 40 80 120 160 200
Irr - Maximum Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
10ETF..S Series
TJ = 25 °C
3
6
12
IFM = 20 A
IFM = 1 A
IFM = 10 A
IFM = 5 A
IFM = 2 A
Document Number: 94091 For technical questions, contact: diodestech@vishay.com www.vishay.com
Revision: 26-Apr-10 5
VS-10ETF..SPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 10 A Vishay High Power Products
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
Fig. 14 - - Thermal Impedance ZthJC Characteristics
20
12
0
0 40 80 120 160 200
Irr - Maximum Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
10ETF..S Series
TJ = 150 °C
4
8
16
IFM = 20 A
IFM = 1 A
IFM = 10 A
IFM = 5 A
IFM = 2 A
0.1
0.01
0.001
1
10
100.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal Impedance (°C/W)
Single pulse
Steady state value
(DC operation)
10ETF..S Series
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
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6Revision: 26-Apr-10
VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products Fast Soft Recovery
Rectifier Diode, 10 A
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
2- Current rating (10 = 10 A)
3- Circuit configuration:
E = Single diode
4- Package:
T = D2PAK (TO-220AC)
5- Type of silicon:
F = Fast soft recovery rectifier
6- Voltage code x 100 = VRRM
7- S = Surface mountable
- PbF = Lead (Pb)-free
8- None = Tube
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
9
02 = 200 V
04 = 400 V
06 = 600 V
1- HPP product suffix
Device code
51 324
6789
VS- 10 E T F 06 S TRL PbF
Document Number: 95046 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
D2PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC outline D2PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
