IXFN20N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 20 A IDM TC = 25C, pulse width limited by TJM 50 A IA TC = 25C 10 A EAS TC = 25C 1 J dV/dt IS IDM, VDD VDSS, TJ 150C 20 V/ns PD TC = 25C 595 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL 1mA t = 1min t = 1s Mounting torque Terminal connection torque C 300 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g Weight 1200V 20A 570m 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol TL = = S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features * International standard package * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Fast recovery diode * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect Advantages * Easy to mount * Space savings * High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. Applications: BVDSS VGS = 0V, ID = 1mA 1200 z VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 6.5 V 200 nA 25 A 5 mA TJ = 125C VGS = 10V, ID = 10A, Note 1 570 m z z z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99889A (04/08) (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ IXFN20N120P Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 10 VDS = 20V, ID = 10A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss SOT-227B Outline 16 S 11.1 nF 600 pF 60 pF 1.60 RGi Gate input resistance td(on) Resistive Switching Times 49 ns tr VGS = 10V, VDS = 0.5 * VDSS, ID = 10A 45 ns td(off) RG = 1 (External) 72 ns 70 ns 193 nC 74 nC 85 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 10A Qgd RthJC 0.21 RthCS 0.05 Source-Drain Diode TJ = 25C unless otherwise specified) C/W C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 20 A ISM Repetitive, pulse width limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM 300 ns IF = 10A, -di/dt = 100A/s VR = 100V 0.84 C 9 A Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN20N120P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 40 20 VGS = 10V 9V 18 VGS = 10V 9V 35 16 30 8V 12 ID - Amperes ID - Amperes 14 10 8 25 20 8V 15 6 10 4 7V 2 7V 5 0 0 0 2 4 6 8 10 0 12 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 2.6 20 VGS = 10V 8V 18 VGS = 10V 2.4 2.2 RDS(on) - Normalized 16 14 ID - Amperes 20 VDS - Volts VDS - Volts 12 10 7V 8 6 4 2.0 I D = 20A 1.8 I D = 10A 1.6 1.4 1.2 1.0 0.8 6V 2 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 22 VGS = 10V 20 TJ = 125C 2.2 16 1.8 ID - Amperes RDS(on) - Normalized 18 2.0 1.6 1.4 14 12 10 8 6 1.2 TJ = 25C 4 1.0 2 0.8 0 0 5 10 15 20 25 30 35 40 -50 ID - Amperes -25 0 25 50 75 TC - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ 100 125 150 IXFN20N120P Fig. 7. Input Admittance Fig. 8. Transconductance 35 35 30 30 25 25 g f s - Siemens ID - Amperes TJ = - 40C 20 TJ = 125C 25C - 40C 15 25C 20 125C 15 10 10 5 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 240 280 16 VDS = 600V 14 I D = 10A 50 I G = 10mA 12 40 VGS - Volts IS - Amperes 20 Fig. 10. Gate Charge 60 30 10 8 6 TJ = 125C 20 4 TJ = 25C 10 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 40 VSD - Volts 80 120 160 200 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 f = 1 MHz Ciss 10,000 Z(th)JC - C / W Capacitance - PicoFarads 15 ID - Amperes VGS - Volts Coss 1,000 100 0.100 0.010 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_20N120P(86) 04-03-08-B http://store.iiic.cc/