3/6/01
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IRF7240
HEXFET® Power MOSFET
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
lUltra Low On-Resistance
lP-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
PD- 93916
Parameter Max. Units
RθJA Maximum Junction-to-Ambient50 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
VDSS RDS(on) max ID
-40V 0.015@VGS = -10V -10.5A
0.025@VGS = -4.5V -8.4A
SO-8
Parameter Max. Units
VDS Drain- Source Voltage -40 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10.5
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -8.6 A
IDM Pulsed Drain Current -43
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 20 mW/°C
VGS Gate-to-Source Voltage ± 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
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Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr Reverse Recovery Time ––– 43 65 ns TJ = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge ––– 75 110 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
A
-43
–––
–––
–––
-2.5
–––
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board, t ≤ 5sec.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -40 ––– –– – V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.025 ––– V/°C Reference to 25°C, ID = -1mA
––– – –– 0.015 VGS = -10V, ID = -10.5A
––– – –– 0.025 VGS = -4.5V, ID = -8.4A
VGS(th) Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 17 ––– ––– S VDS = -10V, ID = -10.5A
––– ––– -15 VDS = -32V, VGS = 0V
––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– –– – 10 0 VGS = 20V
QgTotal Gate Charge –– – 73 1 10 ID = -10.5A
Qgs Gate-to-Source Charge ––– 31 47 nC VDS = -20V
Qgd Gate-to-Drain ("Miller") Charge ––– 17 26 VGS = -10V
td(on) Turn-On Delay Time ––– 52 – –– VDD = -20V
trRise Time ––– 490 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 210 ––– RG = 6.0Ω
tfFall Time ––– 97 ––– VGS = -10V
Ciss Input Capacitance ––– 9250 ––– VGS = 0V
Coss Output Capacitance ––– 580 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 520 – –– ƒ = 1.0kHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
IRF7240
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-10.5A
0.01
0.1
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-V , Drain-to-Source Volta
g
e (V)
-I , Drain-to-Source Current (A)
DS
D
-2.70V
0.1
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.70V
0.01
0.1
1
10
100
2.5 3.0 3.5 4.0 4.5
V = -25V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
IRF7240
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2
-V ,Source-to-Drain Volta
g
e (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
-V , Drain-to-Source Volta
g
e (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
110 100
-VDS, Drain-to-Source Voltage (V)
0
4000
8000
12000
16000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
0 20 40 60 80 100
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-10.5A
V =-8V
DS
V =-20V
DS
V =-32V
DS
IRF7240
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150
0
2
4
6
8
10
12
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
IRF7240
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Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0 1020304050
-ID , Drain Current (A)
0.010
0.015
0.020
0.025
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = -10V
VGS = -4.5V
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
0.0 4.0 8.0 12.0 16.0
-VGS, Gate -to -Source Voltage (V)
0.010
0.015
0.020
0.025
0.030
0.035
RDS(on), Drain-to -Source On Resistance ( Ω)
ID = -10.5A
IRF7240
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Fig 15. Typical Vgs(th) Variance Vs.
Juction Temperature
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
-VGS(th) , Variace ( V )
ID = -250µA
Fig 16. Typical Power Vs. Time
0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
0
40
80
120
160
200
Power (W)
IRF7240
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SO-8 Package Details
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOT PRINT
8X 0. 72 [.02 8]
6.46 [.255]
3X 1. 27 [.05 0]
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1. 78 [.07 0]
EX AMPLE: THIS IS AN IRF7 10 1 (MOSFET)
INTERNATIONAL
RECTIFIER
LOGO
F7101
YWW
XXXX
PART NUMBER
LOT CODE
WW = WEEK
Y = LAST DIGIT OF THE YEAR
DATE CODE (YWW)
IRF7240
www.irf.com 9
33 0.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTRO LLING DIMEN SIO N : M ILLIM ETER.
2. OU TL INE CO NFO R MS T O EIA-481 & E IA -541.
FEED DIRECTION
TERM INAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CO NTR OLLING DIM ENSION : M ILLIM ETER.
2. ALL DIM ENSIONS ARE SHO W N IN M ILLIM ETERS(INCHES).
3. O UTLIN E C ON FORM S T O EIA-481 & EIA-541.
Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
