DS30577 Rev. 5 - 2 1 of 3 BC807-16W / -25W / -40W
www.diodes.com ã Diodes Incorporated
BC807-16W / -25W / -40W
PNP SURFACE MOUNT TRANSISTOR
Maximum Ratings @TA = 25°C unless otherwise specified
·Ideally Suited for Automatic Insertion
·Epitaxial Planar Die Construction
·For Switching, AF Driver and Amplifier Applications
·Complementary NPN Types Available (BC817-xxW)
·Lead Free By Design/RoHS Compliant (Note 1)
·"Green" Device (Note 2)
·Case: SOT-323
·Case Material: Molded Plastic. "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
·Pin Connections: See Diagram
·Marking:
·Ordering & Date Code Information: See Page 3
·Approximate Weight: 0.006 grams
Mechanical Data
@TA = 25°C unless otherwise specified
Features
SOT-323
Dim Min Max
A0.25 0.40
B1.15 1.35
C2.00 2.20
D0.65 Nominal
E0.30 0.40
G1.20 1.40
H1.80 2.20
J0.0 0.10
K0.90 1.00
L0.25 0.40
M0.10 0.18
a0°8°
All Dimensions in mm
P/N Marking
BC807-16W K5A
BC807-25W K5B
BC807-40W K5C
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
Electrical Characteristics
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC-500 mA
Peak Collector Current ICM -1000 mA
Peak Emitter Current IEM -1000 mA
Power Dissipation at TSB = 50°C (Note 3) Pd200 mW
Thermal Resistance, Junction to Ambient Air (Note 3) RqJA 625 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Characteristic (Note 4) Symbol Min Typ Max Unit Test Condition
DC Current Gain Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
hFE
100
160
250
60
100
170
—
250
400
600
—
—
—
—
VCE = -1.0V, IC = -100mA
VCE = -1.0V, IC = -300mA
Collector-Emitter Saturation Voltage VCE(SAT) ——-0.7 V IC = -500mA, IB = -50mA
Base-Emitter Voltage VBE ——-1.2 V VCE = -1.0V, IC = -300mA
Collector-Emitter Cutoff Current ICES ——-100
-5.0
nA
µA
VCE = -45V
VCE = -25V, Tj = 150°C
Emitter-Base Cutoff Current IEBO ——-100 nA VEB = -4.0V
Gain Bandwidth Product fT100 — — MHz VCE = -5.0V, IC = -10mA,
f = 50MHz
Collector-Base Capacitance CCBO ——12 pF VCB = -10V, f = 1.0MHz