©2000 Fairchild Semiconductor International Rev. A, February 2000
BD675A/677A/679A/681
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD675A
: BD677A
: BD679A
: BD681
45
60
80
100
V
V
V
V
VCEO Collector-Emitter Voltage : BD675A
: BD677A
: BD679A
: BD681
45
60
80
100
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 4 A
ICP *Collector Current (Pulse) 6 A
IB Base Current 100 mA
PC Collector Dissipation (TC=25°C) 40 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) *Collector-Emitter Sustaining Voltage
: BD675A
: BD677A
: BD679A
: BD681
IC = 50mA , IB = 0 45
60
80
100
V
V
V
V
ICBO Collector- Base Voltage : BD675A
: BD677A
: BD679A
: BD681
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, VBE = 0
200
200
200
200
µA
µA
µA
µA
ICEO Collector Cut-off Current : BD675A
: BD677A
: BD679A
: BD681
VCE = 45V, VBE = 0
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 100V, VBE = 0
500
500
500
500
µA
µA
µA
µA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE * DC Current Gain : BD675A/677A/679A
: BD68 1 VCE = 3V, IC = 2A
VCE = 3V, IC = 1.5A 750
750
VCE(sat) * Collector-Emitter Saturation Voltage
: BD675A/677A/679A
: BD68 1 IC = 2A, IB = 40mA
IC = 1.5A, IB = 30mA 2.8
2.5 V
V
VBE(on) * Base-Emitter ON Voltage : BD675A/677A/679A
: BD68 1 VCE = 3V, IC = 2A
VCE = 3V, IC = 1.5A 2.5
2.5 V
V
BD675A/677A/679A/681
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD676A, BD678A, BD680A and BD682 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
BD675A/677A/679A/681
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
0.1 1 10
100
1000
10000
VCE = 3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.0
0.4
0.8
1.2
1.6
2.0
2.4 Ic = 250 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
VCE = 3V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
0.1
1
10
BD677A
10µs
IC(max). Pulsed
BD681
BD679A
BD675A
100µs
1ms
10ms
DC
IC(max). Co nt inuous
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD675A/677A/679A/681
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
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Medium Power Linear and Switching
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● Complement to BD676A, BD678A,
BD680A and BD682 respectively
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Applications
Medium Power Linear and Switching
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● Complement to BD676A, BD678A,
BD680A and BD682 respectively
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Applications
Medium Power Linear and Switching
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BD681STU Full Production $0.247 TO-126 3 RAIL
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* 1,000 piece Budgetary Pricing
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