Advanced Power MOSFET IRFW/1Z44A FEATURES BVicg = 60V M Avalanche Rugged Technology _ Q m Rugged Gate Oxide Technology Rosyon) 0.024 M@ Lower Input Capacitance lp = 50A M improved Gate Charge M Extended Safe Operating Area 3 HM 175* QOperating Temperature D-PAK = -F-PAK M Lower Leakage Current : 10 HA(Max.) @ Vp, = 60V 2 M Lower Rogon) : 0.020 2 (Typ.) 1 ; 4 a 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units Voss Drain-to-Source Voltage 60 Vv ' Continuous Drain Current (T.=25C ) 50 A 5 Continuous Drain Current (T.=100C) 35.4 lon Drain Current-Pulsed @ 200 A Ves Gate-to-Source Voltage +20 Vv Eas Single Pulsed Avalanche Energy @ 857 mJ lar Avalanche Current Q 50 A Ear Repetitive Avalanche Energy Q 12.6 mJ dv/dt Peak Diode Recovery dv/dt 8B 5.5 Vins Total Power Dissipation (T,=25C )* 3.8 Ww Pp Total Power Dissipation (T,=25C ) 126 Ww Linear Derating Factor 0.84 wrc T, , Tere Operating Junction and -55 to +175 Storage Temperature Range 3 T, Maximum Lead Temp. for Soldering 300 C Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R ouc Junction-to-Case -- 4.19 R esa Junction-to-Ambient * - 40 C AW R esa Junction-to-Ambient ~ 62.5 * When mounted on the minimum pad size recommended (PCB Mount). ELECTRONICS Me 7964142 0039081 102IRFW/IZ44A N-CHANNEL POWER MOSFET Electrical Characteristics (1,=25C unless otherwise specified) Symbol Characteristic Min. | Typ. | Max.) Units Test Condition BVoss_| Drain-Source Breakdown Voltage | 60 | - [| -- | V_ | Ves=0ViIp=250nA ABVIAT, | Breakdown Voltage Temp. Coeff. | -- [0.063] - | V/C| Ip=250HA See Fig 7 Vest) | Gate Threshold Voltage 20] | 4.0] V_ | Vos=5Vitp=250 pA lees Gate-Source Leakage , Forward -~ |= | 100} Ves=20V Gate-Source Leakage , Reverse - | - 1-100 Veg=-20V - | - | 10 Vps=60V loss Drain-to-Source Leakage Current ~T. | 4100 pA Vps=48V, T= 150C R Static Drain-Source _ _ DSten)_ | On-State Resistance | ~ 0.024) 2 | Ves=10V,In=25A Ors Forward Transconductance ~~ [32.6{ -- Vps=30V,IDp=25A @ Ciss | Input Capacitance - |1770/2300 Vec#OV Vng#25V f =1MHz Coss | Output Capacitance ~ | 90 | 680] pF ; - See Fig 5 Cras Reverse Transfer Capacitance | 220 | 255 ton) Turn-On Delay Time - | 20 | 40 Vop230V 152504, t Rise Time - | 16 | 40 ns | Rg=9.10 tarot Turn-Off Delay Time | 68 | 140 | . Fall Time | 70 | 140 SeeFig13 = OO Q, Total Gate Charge ~- | 64 | 83 Vos=48V,Vgg=10V, Q,, | Gate-Source Charge - 112.3] | nC | Ip=50A Qua | Gate-Drain( Miller ) Charge ~ (23.6) See Fig 6 & Figi2 @ Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. | Typ. | Max./| Units Test Condition Is Continuous Source Current - | - {| 50 A Integral reverse pn-diode Ions Pulsed-Source Current @|- | - | 200 in the MOSFET Vsp Diode Forward Voltage @| - - | 18] V | T,=25C,=50A,Vg.=0V tre Reverse Recovery Time - | 85] - | ns | T,=25C,|,=50A - Q., Reverse Recovery Charge - (024) ~ | pC | difdt=100Aus @ Notes ; @ Repetitive Rating : Pulse Width Limited by Maximum Junction Temperatur @ L=0.4mH, |,,250A, V,>=25V, R,=27Q, Starting T,=25C @ |s.550A, difdt B50A/ ps, Vop<BVoss, Starting T, =25 C @ Pulse Test : Pulse Width = 2501s, Duty Cycle < 2% @ Essentially Independent of Operating Temperature we 79b414e 0039082 045 aN-CHANNEL POWER MOSFET J a [A Ip, Drain Current Fig 1. Output Characteristics 10 p = (ON: fT! 1; Ops Piles Tes . : . 2 Baw: Cg x aot Ww aw Vig Drain-Source Voltage [M Fig 3. On-Resistance vs. Drain Current 0.08 : . . : t Ros ton) + R) Drain-Source On-Resistance 2 2 R a 0.a. 0.00 (pF) Capacitance : eit: 7, 925C o ao ao 10 160 a 0 1,, beainGover A Fig 5. Capacitance vs. Drain-Source Voltage Ges? Got Ga (Gye started ) Gas? ast Ga Gae Ga [al Ip , Drain Current [A] Ipg , Reverse Drain Current [v] Veg + Gate-Source Voltage IRFW/IZ44A Fig 2. Transfer Characteristics a f- ee uw : @Ntes : T 1.Y,-0V : hy 2.4, -0V f Peed 3. 20 ps Pulse Test 2 4 6 3 10 Vz Gate-Ganve Voltage Fig 4. Source-Drain Diode Forward Voltage i. @ Nites ; LV s0V 2, 250 ps Pulee Test. Pete pi i i i i i O4 06 08 10 12 14 16 28 20 22 24 26 2.8 3.0 Va, Scurce-Drain Voltage {VJ Fig 6. Gate Charge vs. Gate-Source Voltage MH 796414e 0039083 T85IRFW/IZ44A N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature BYbss {Normalized) Drain-Source Breakdown Voltage ole 5 5 3B 0 6 5S 8B 1 15 10 15 T, , Xnction Tesperabre [ Fig 9. Max. Safe Operating Area & Were v q 2 ow? 8 5 3 8 a # wh Fig 8 On-Resistance vs. Temperature Rogion) + (Normalized) Drain-Source On-Resistance Fig 10. Max. Drain Current vs. Case Temperature a = = > . {a} 8 i, , Drain Current & 8 & T i 19 1% oe an 6 9 Qa a 4 : ~ a N 10? pei a a0 10-4 1073 10? ao" 10 103 t, . Square Wave Pulse Duration [sec] Me 7964342 0039084 411N-CHANNEL POWER MOSFET IRFW/1Z44A Fig 12. Gate Charge Test Circuit & Waveform t Regulator Vos Same Type 50KQ %) as DUT 2 = I 200nF soo Lov Vo DUT + 3mA j | _S R R, c . Ww : Charge urrent Sampling (Ig) Current Sampling (Ip) Resistor Resistor Fig 13. Resistive Switching Test Circuit & Waveforms Ry Ve, J--VWW 0 Vin Vop h (0.5 rated Vpg) Re | Nt DUT 10V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BV. 1 DSS Ly Eqs= 37 Ly lgg? eee Vos Loe 2 BV pss -- Vpp Vary t, to obtain Loy BVpss required peak I, @. lis i Re a ==C == Vpp Int) \ \ D < \ ur Vpp a \ Vps (t) 10V fl | i \ me j<< 1, w|{ Time MH 7964142 00359085 655IRFW/IZ44A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT H+ " . f <- Is 9 oO L Driver Vos Same Type Re *) as DUT FF Vop Vos + dv/dt controlled by R, + I, controlled by Duty Factor D V p= Gate Pulse Width i SS Gate Pulse Period 10V ( Driver ) | Igy, Body Diode Forward Current Is (DUT ) di/dt tw | KO Body Diode Reverse Current Vos (DUT ) _ Body Tae Forward Voltage Drop Body Diode Recovery dv/dt P Me 7964142 0039086 794 Me B2e5d2