2SK117
2003-03-25
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK117
Low Noise Audio Amplifier Applications
• High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
• High breakdown voltage: VGDS = −50 V
• Low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ)
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Gate-drain voltage VGDS −50 V
Gate current IG 10 mA
Drain power dissipation PD 300 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate cut-off current IGSS VGS = −30 V, VDS = 0 −1.0 nA
Gate-drain breakdown voltage V (BR) GDS V
DS = 0, IG = −100 µA −50 V
Drain current IDSS
(Note)
VDS = 10 V, VGS = 0 1.2 14 mA
Gate-source cut-off voltage VGS (OFF) V
DS = 10 V, ID = 0.1 µA −0.2 −1.5 V
Forward transfer admittance Yfs V
DS = 10 V, VGS = 0, f = 1 kHz 4.0 15 mS
Input capacitance Ciss V
DS = 10 V, VGS = 0, f = 1 MHz 13 pF
Reverse transfer capacitance Crss V
GD = −10 V, ID = 0, f = 1 MHz 3 pF
NF (1) VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 10 Hz 5 10
Noise figure
NF (2) VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 1 kHz 1 2
dB
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1D
Weight: 0.21 g (typ.)
2SK117
2003-03-25
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2SK117
2003-03-25
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2SK117
2003-03-25
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RESTRICTIONS ON PRODUCT USE
