Order this document by MJ11017/D SEMICONDUCTOR TECHNICAL DATA " ! . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. * High dc Current Gain @ 10 Adc -- hFE = 400 Min (All Types) * Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) - MJ11018, 17 VCEO(sus) = 250 Vdc (Min) - MJ11022, 21 * Low Collector-Emitter Saturation VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A * Monolithic Construction * 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms. *Motorola Preferred Device IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III vIIIII IIIIIIIIIIIII IIIIIIIII MAXIMUM RATINGS Symbol MJ11018 MJ11017 MJ11022 MJ11021 Unit VCEO 150 250 Vdc Collector-Base Voltage VCB 150 250 Vdc Emitter-Base Voltage VEB 50 Vdc IC 15 30 Adc Rating Collector-Emitter Voltage Collector Current -- Continuous Peak Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25_C Derate Above 25_C PD 175 1.16 Watts W/_C TJ, Tstg - 65 to + 175 - 65 to + 200 _C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJC 0.86 _C/W Thermal Resistance, Junction to Case PD, POWER DISSIPATION (WATTS) (1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 - 120 VOLTS 200 WATTS CASE 1-07 TO-204AA (TO-3) 10%. 200 150 100 50 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIII IIIII IIII IIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 150 250 -- -- -- -- 1.0 1.0 -- -- 0.5 5.0 -- 2.0 400 100 15,000 -- -- -- 2.0 3.4 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 0. 1 Adc, IB = 0) VCEO(sus) Vdc MJ11017, MJ11018 MJ11021, MJ11022 Collector Cutoff Current (VCE = 75, IB = 0) (VCE = 125, IB = 0) Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C) ICEO mAdc MJ11017, MJ11018 MJ11021, MJ11022 ICEV Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) mAdc IEBO mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA) (IC = 15 Adc, IB = 150 mA) hFE -- VCE(sat) Vdc Base-Emitter On Voltage IC = 10 A, VCE = 5.0 Vdc) VBE(on) -- 2.8 Vdc Base-Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) VBE(sat) -- 3.8 Vdc [hfe] 3.0 -- Mhz -- -- 400 600 75 -- -- PNP Unit DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob pF MJ11018, MJ11022 MJ11017, MJ11021 Small-Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe SWITCHING CHARACTERISTICS Typical Characteristic Symbol NPN td tr 150 75 ns 1.2 0.5 s ts tf 4.4 2.7 s 10.0 2.5 s Delay Time Rise Time Storage Time (VCC = 100 V, IC = 10 A, IB = 100 mA VBE(off) = 50 V) (See Figure 2.) Fall Time (1) Pulsed Test: Pulse Width = 300 s, Duty Cycle 2%. RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA V2 APPROX +12 V VCC 100 V RC SCOPE TUT RB 51 D1 0 V1 APPROX - 8.0 V 10 K 8.0 + 4.0 V 25 s for td and tr, D1 is disconnected and V2 = 0 tr, tf 10 ns DUTY CYCLE = 1.0% For NPN test circuit reverse diode and voltage polarities. Figure 2. Switching Times Test Circuit 2 Motorola Bipolar Power Transistor Device Data r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 RJC(t) = r(t) RJC RJC(t) = 0.86C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.05 0.02 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.2 1.0 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 Figure 3. Thermal Response IC, COLLECTOR CURRENT (AMPS) FORWARD BIAS 5.0 ms 1.0 ms 0.5 ms 30 20 0.1 ms 10 dc 5.0 3.0 2.0 TJ = 175C SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITATION @ TC = 25C SINGLE PULSE MJ11017, 18 MJ11021, 22 1.0 0.5 0.3 0.2 0 3.0 5.0 7.0 10 20 30 50 70 There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on T J(pk) = 175_C, TC is variable dependIng on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 175_C. T J(pk) may be calculated from the data in Figure 3. At high case temperatures thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v 100 150 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Maximum Rated Forward Bias Safe Operating Area (FBSOA) REVERSE BIAS IC, COLLECTOR CURRENT (AMPS) 30 20 L = 200 H IC/IB1 50 TC = 25C VBE(off) 0 - 5.0 V RBE = 47 DUTY CYLE = 10% For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be hold to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives ROSOA characteristics. 10 MJ11017, 18 MJ11021, 22 0 0 20 60 100 140 180 220 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 260 Figure 5. Maximum RBSOA, Reverse Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 PNP NPN 30,000 20,000 VCE = 5.0 Vdc TJ = 150C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 7000 5000 3000 2000 TJ = 25C 1000 700 500 TJ = - 55C 300 10,000 7000 5000 TJ = 25C 3000 2000 TJ = - 55C 1000 700 500 200 100 0.2 VCE = 5.0 Vdc TJ = 150C 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (A) 300 0.2 0.3 15 20 10 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (A) 10 15 20 Figure 6. DC Current Gain NPN IC = 15 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) PNP 4.0 TJ = 25C 3.5 IC = 10 A 3.0 IC = 5.0 A 2.5 2.0 1.5 1.0 0.5 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IB, BASE CURRENT (mA) 4.0 IC = 15 A 3.5 TJ = 25C IC = 10 A 3.0 IC = 5.0 A 2.5 2.0 1.5 1.0 0.5 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IB, BASE CURRENT (mA) Figure 7. Collector Saturation Region PNP NPN 4.0 3.5 4.0 3.5 TJ = 25C VOLTAGE (VOLTS) VOLTAGE (VOLTS) TJ = 25C 3.0 2.5 2.0 1.5 1.0 0.5 0.1 VBE(sat) @ IC/IB = 100 VBE @ VCE = 5.0 V 2.0 3.0 5.0 7.0 10 2.5 2.0 1.5 VBE(sat) @ IC/IB = 100 1.0 VCE(sat) @ IC/IB = 100 0.2 0.3 0.5 0.7 1.0 3.0 20 30 50 70 VBE @ VCE = 5.0 V 0.5 0.1 0.2 0.3 0.5 0.7 1.0 COLLECTOR CURRENT (AMPS) VCE(sat) @ IC/IB = 100 2.0 3.0 5.0 7.0 10 20 30 50 COLLECTOR CURRENT (AMPS) Figure 8. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJ11017/D* MJ11017/D