NPN Silicon Planar Medium Power Transistors ZTX450 ZTX451 FEATURES @ High power dissipation: 1W at T,,,) = 25C @ hee specified up to 1A @ High f;: 2ZOOMHz typical DESCRIPTION These are plastic encapsulated general purpose transistors designed for smatl and medium signal amplification from d.c. to radio frequencies. Application areas include: audio frequency amplifiers, driver and output stages, oscillators and general purpose switching. The E-line package is formed by transfer moulding a silicone plastic specially selected to provide a rugged one-piece encapsulation resistant to severe environments and allow the high junction temperature operation normally associated with metal can devices. E-line encapsulated devices are approved for use in military, industrial and professional equipments. ABSOLUTE MAXIMUM RATINGS Plastic E-Line (TO-92 Compatible) Alternative lead configurations are available as plug-in replacements of TO-5/39 and TO-18 metal can types, and for surface mounting. Complementary to ZTX550 and ZTX551 PNP transistors. The ZTX450 and ZTX451 transistors approved for use in military equipment are identified by the following numbers. BS9365 F137 & F138 - Category P. BS9365 F139 & F140 - Category Q. Parameter Symbol ZTX450 | ZTX451 Unit Collector-base voltage Veso 60 80 Vv Collector-emitter voltage Vero 45 60 Vv Emitter-base voltage Veso 5 Vv Peak pulse current (see note below) lom 2 A Continuous collector current Ie 1 A Base current Ip 200 mA Power dissipation at T= 25C Prot 1 Ww at Tyase = 25C 2 w Operating and storage temperature range 55 to +200 c Note: Consult Safe Operating Area graph for conditions. SE47ZTX450 ZTX451 CHARACTERISTICS (at T,,,, = 25C unless otherwise stated). ZTX450 ZTX451 Parameter Symbol ; , Unit Conditions Min. | Max. | Min. | Max. Collector-base lcBo - 0.1 - ~ HA Vop=45V cut-off current - - - 0.1 uA Vopg = 60V Emitter-base cut-off | lego - 0.1 - 0.1 pA Veg=4Vv current Coilector-emitter Vce(sat} - |0.25] - |0.35 Vv lo = 150mA, Ig = 15mA* saturation voltage Base-emitter Veeisat) - 1.1 - 1.1 Vv lc = 150mA, Ig= 15mA* saturation voltage Collector-emitter Veeoisus) | 45 - 60 - Vv lo = 10mA* sustaining voltage Static forward Nee 100 | 300 | 50 | 150 Ip = 150mA, Veg = 10V* current transfer ratio 15 ~ 10 - lc=1A, Veg = 10V* Transition frequency | fy 150 _ 150 _ MHz | I-=50mA, Vcp = 10V f = 1O00MHz Output capacitance Cobo - 15 - 15 pF Vcog=10V, f= 1MHz *Measured under pulsed conditions. Pulse width = 300us. Duty cycle< 2%. MAXIMUM DISSIPATION (WATTS) 0 -5 -40 -20 Qo 2040 60 B60 Derating curve 100 TEMPERATURE C 1 200 3754/2 SE48ZTX450 ZTX451 COLLECTOR CURRENT ic) AMPS al 1 10 COLLECTOR-EMITTER VOLTAGE (Vce) VOLTS Safe operating area at T,,,,, = 25C (single pulse) 160 TRANSIENT THERMAL IMPEDANCE C/W 120 100 80 60 40 20 100us Ims 10ms 100ms PULSE WIDTH Maximum transient thermal impedance curves SE49ZTX450 ZTX451 10 0-9 L BASE- EMITTER SATURATION VOLTAGE Vee sa: 0-8 (VOLTS) LA a om oT 07 ae | ea ow 06 mA 10mA OOmA iA Collector Current (ic) 6282 Typical base-emitter saturation voltages plotted against collector current 04 0-3 pate COLLECTOR- Ie EMITTER =10 SATURATION IB VOLTAGE Vee tsar (vous) 0-2 ZTX450 0-1 ZTX451 dg a 0 L mA 10mA 100mA 1A Collector Current (Ic) 4288 Typical collector-emitter saturation voltages plotted against collector current SE50ZTX450 ZTX451 12 BASE- EMITTER TURN-ON VOLTAGE Vag tony (VOLTS) a mA 10mA 100mA 1A 10A Collector Current (Ic) 4269 Typical base-emitter turn-on voltages plotted against collector current Vee = 10 Ipelpg=le 70 ty trty (nsecs) tg (nsecs) 1A Ie 4272 Collector Current (Ic) Typical switching speeds SE51ZTX450 ZTX451 NORMALISED STATIC FORWARD CURRENT TRANSFER RATIO % Neg imA A A 1A COLLECTOP CURRENT (Ic) 4267 Typical static forward current transfer ratio plotted against collector current SE52