DATA SHEET MICRONAS Edition Nov. 27, 2003 6251-538-2DS HAL573...576, HAL581, 584 Two-Wire Hall Effect Sensor Family MICRONAS HAL57x, HAL58x DATA SHEET Contents Page Section Title 3 3 3 4 4 4 5 5 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability 6 2. Functional Description 7 7 12 12 12 12 13 14 15 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Overview 18 18 20 22 24 26 28 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. Type Descriptions HAL573 HAL574 HAL575 HAL576 HAL581 HAL584 30 30 30 30 31 31 5. 5.1. 5.2. 5.3. 5.4. 5.5. Application Notes Application Circuit Extended Operating Conditions Start-up Behavior Ambient Temperature EMC and ESD 32 6. Data Sheet History 2 Micronas HAL57x, HAL58x DATA SHEET Two-Wire Hall Effect Sensor Family in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. - ideal sensor for applications in extreme automotive and industrial environments - EMC corresponding to DIN 40839 1.2. Family Overview 1. Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points. Type Switching Behavior Sensitivity see Page 573 unipolar low 18 574 unipolar medium 20 575 latching medium 22 The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and a current source. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the current source is switched on (high current consumption) or off (low current consumption). 576 unipolar medium 24 581 unipolar inverted medium 26 584 unipolar inverted medium 28 The active offset compensation leads to constant magnetic characteristics in the full supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.75 V to 24 V in the junction temperature range from -40 C up to 140 C. All sensors are available in the SMD package SOT89B-1 and in the leaded versions TO92UA-1 and TO92UA-2. Unipolar Switching Sensors: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Current consumption IDDhigh BHYS 1.1. Features: - current output for two-wire applications IDDlow - low current consumption: 5 mA ... 6.9 mA - high current consumption: 12 mA ... 17 mA - junction temperature range from -40 C up to 140 C. 0 BOFF BON B Fig. 1-1: Unipolar Switching Sensor - operates from 3.75 V to 24 V supply voltage - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - switching offset compensation at typically 145 kHz - overvoltage and reverse-voltage protection - magnetic characteristics are robust against mechanical stress effects - constant magnetic switching points over a wide supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics Micronas 3 HAL57x, HAL58x DATA SHEET Unipolar Inverted Switching Sensors: 1.3. Marking Code The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range Current consumption K IDDhigh BHYS IDDlow 0 BON BOFF B E HAL573 573K 573E HAL574 574K 574E HAL575 575K 575E HAL576 576K 576E HAL581 581K 581E HAL584 584K 584E Fig. 1-2: Unipolar Inverted Switching Sensor Latching Sensors: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. The current consumption does not change if the magnetic field is removed. For changing the current consumption, the opposite magnetic field polarity must be applied. Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. 1.4. Operating Junction Temperature Range Current consumption IDDhigh The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). BHYS K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C IDDlow BOFF Fig. 1-3: Latching Sensor 4 1.3.1. Special Marking of Prototype Parts 0 BON B Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to section 5.4. on page 31 for details. Micronas HAL57x, HAL58x DATA SHEET 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: K or E Package: SF for SOT89B-1 UA for TO92UA Type: 57x or 58x Example: HAL581UA-E Type: 581 Package: TO92UA Temperature Range: TJ = -40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors". 1.6. Solderability all packages: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity. VDD 1 x 2 GND x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 1-4: Pin configuration Micronas 5 HAL57x, HAL58x DATA SHEET 2. Functional Description The HAL 57x, HAL 58x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. In the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the Hall sensor. In the high current consumption state, the current source is switched on and the current consumption is caused by the current through the Hall sensor and the current source. The built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bouncing. HAL57x, HAL58x VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hall Plate Hysteresis Control Comparator Current Source Switch Clock GND 2, x x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 2-1: HAL57x, HAL 58x block diagram fosc Magnetic offset caused by mechanical stress is compensated for by using the "switching offset compensation technique". An internal oscillator provides a twophase clock. In each phase, the current is forced through the Hall plate in a different direction, and the Hall voltage is measured. At the end of the two phases, the Hall voltages are averaged and thereby the offset voltages are eliminated. The average value is compared with the fixed switching points. Subsequently, the current consumption switches to the corresponding state. The amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external protection diode is needed for reverse voltages ranging from 0 V to -15 V. t B BOFF BON t IDD IDDhigh IDDlow t IDD 1/fosc = 6.9 s t Fig. 2-2: Timing diagram (example: HAL 581) 6 Micronas DATA SHEET HAL57x, HAL58x 3. Specifications 3.1. Outline Dimensions Fig. 3-1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Weight approximately 0.039 g Micronas 7 HAL57x, HAL58x DATA SHEET Fig. 3-2: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.105 g 8 Micronas DATA SHEET HAL57x, HAL58x Fig. 3-3: TO92UA-2: Plastic Transistor Standard UA package, 3 leads Weight approximately 0.105 g Micronas 9 HAL57x, HAL58x DATA SHEET Fig. 3-4: TO92UA-2: Dimensions ammopack inline, not spread 10 Micronas DATA SHEET HAL57x, HAL58x Fig. 3-5: TO92UA-1: Dimensions ammopack inline, spread Micronas 11 HAL57x, HAL58x DATA SHEET 3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-1 TO92UA-1/-2 x center of the package center of the package y 0.85 mm nominal 0.9 mm nominal 3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground. Symbol Parameter Pin No. VDD Supply Voltage TJ Junction Temperature Range 1) -18 V with a 100 series resistor 2) as long as T max is not exceeded J 1 Limit Values Unit Min. Max. -151) 2) 282) V -40 170 C at pin 1 (-16 V with a 30 series resistor) 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 155 C. The wettability was more than 95%. 12 Micronas HAL57x, HAL58x DATA SHEET 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions" of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground. Symbol Parameter Pin No. Unit Min. Typ. Max. 3.75 - 24 V VDD Supply Voltage TA Ambient Temperature for Continuous Operation -40 - 851) C ton Supply Time for Pulsed Mode - 30 - s 1) when 1 Limit Values using the "K" type and VDD 16 V Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage on and off (pulse mode). Please refer to section 5.4. on page 31 for details. Micronas 13 HAL57x, HAL58x DATA SHEET 3.6. Characteristics at TJ = -40 C to +140 C , VDD = 3.75 V to 24 V, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 12 V Symbol Parameter Pin No. Limit Values Unit Min. Typ. Max. Conditions IDDlow Low Current Consumption over Temperature Range 1 5 6 6.9 mA IDDhigh High Current Consumption over Temperature Range 1 12 14.3 17 mA VDDZ Overvoltage Protection at Supply 1 - 28.5 32 V fosc Internal Oscillator Chopper Frequency over Temperature Range - - 145 - kHz ten(O) Enable Time of Output after Setting of VDD 1 - 30 - s 1) tr Output Rise Time 1 - 0.4 1.6 s VDD = 12 V, Rs = 30 tf Output Fall Time 1 - 0.4 1.6 s VDD = 12 V, Rs = 30 RthJSB case SOT89B-1 Thermal Resistance Junction to Substrate Backside - - 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 3-6 RthJA case TO92UA-1, TO92UA-2 Thermal Resistance Junction to Soldering Point - - 150 200 K/W 1) B > BON + 2 mT or B < BOFF - 2 mT for HAL 57x, IDD = 25 mA, TJ = 25 C, t = 20 ms B > BOFF + 2 mT or B < BON - 2 mT for HAL 58x 5.0 2.0 2.0 1.0 Fig. 3-6: Recommended pad size SOT89B-1 Dimensions in mm 14 Micronas HAL57x, HAL58x DATA SHEET 3.7. Magnetic Characteristics Overview at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Parameter Switching Type TJ On point BON Off point BOFF Hysteresis BHYS Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 40.2 45.7 51.2 37.8 43.5 49.2 0.5 2.2 5 mT HAL 573 -40 C unipolar 25 C 38 43.5 49 36 41.5 47 0.5 2 5 mT 100 C 34 40 46 32 38 44 0.5 2 5 mT 140 C 34 38 46 32 36 44 0.2 2 5 mT HAL 574 -40 C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 mT unipolar 25 C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 mT 100 C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 mT 140 C 5 8.8 12.5 3.5 7.5 11.5 0.2 1.9 3.5 mT HAL 575 -40 C 0.5 4 8 -8 -4 -0.5 5 8 11 mT latching 25 C 0.5 4 8 -8 -4 -0.5 5 8 11 mT 100 C 0.5 4 8 -8 -4 -0.5 5 8 11 mT 140 C 0.5 4 8 -8 -4 -0.5 5 8 11 mT HAL 576 -40 C 3.3 5.7 8.2 1.8 4.2 6.7 0.3 1.9 3.5 mT unipolar 25 C 3.3 5.7 8.2 1.8 4.2 6.7 0.3 1.9 3.5 mT 100 C 2.8 5.5 8.3 1.3 4 6.8 0.3 1.9 3.5 mT 140 C 2 5.2 8.3 0.3 3.7 7 0.3 1.9 3.5 mT HAL 581 -40 C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 mT unipolar 25 C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 mT inverted 100 C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 mT 140 C 6.5 10.4 14.3 8 12 16 0.5 2 3.5 mT HAL 584 -40 C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 mT unipolar 25 C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 mT inverted 100 C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 mT 140 C 4.5 8 11.5 5.5 9 12.5 0.2 1.9 3.5 mT Note: For detailed descriptions of the individual types, see pages 18 and following. Micronas 15 HAL57x, HAL58x mA 25 DATA SHEET mA 20 HAL 57x, HAL 58x 18 20 IDD HAL 57x, HAL 58x IDDhigh 15 IDD IDDhigh 16 14 10 12 5 VDD = 3.75 V IDDlow 10 VDD = 12 V 8 VDD = 24 V 0 -5 -10 TA = -40 C 6 TA = 25 C 4 IDDlow TA = 100 C -15 -20 -15 -10 -5 0 5 2 10 15 20 25 30 V 0 -50 0 50 100 VDD HAL 57x, HAL 58x 18 IDD 200 C TA Fig. 3-7: Typical current consumption versus supply voltage mA 20 150 Fig. 3-9: Typical current consumption versus ambient temperature kHz 200 HAL 57x, HAL 58x 180 16 fosc 160 IDDhigh 14 140 12 120 TA = -40 C 10 TA = 25 C TA = 100 C 8 6 100 VDD = 3.75 V 80 VDD = 12 V VDD = 24 V 60 IDDlow 4 40 2 20 0 0 1 2 3 4 5 6 V VDD Fig. 3-8: Typical current consumption versus supply voltage 16 0 -50 0 50 100 150 200 C TA Fig. 3-10: Typ. internal chopper frequency versus ambient temperature Micronas HAL57x, HAL58x DATA SHEET kHz 200 HAL 57x, HAL 58x kHz 200 180 180 fosc 160 fosc 160 140 140 120 120 100 HAL 57x, HAL 58x 100 TA = -40 C TA = -40 C 80 TA = 25 C TA = 100 C 60 TA = 25 C 60 TA = 100 C 40 40 20 20 0 0 5 10 15 20 25 30 V VDD Fig. 3-11: Typ. internal chopper frequency versus supply voltage Micronas 80 0 3 4 5 6 7 8 V VDD Fig. 3-12: Typ. internal chopper frequency versus supply voltage 17 HAL573 DATA SHEET 4. Type Descriptions Applications 4.1. HAL 573 The HAL 573 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: The HAL 573 is a unipolar switching sensor with low sensitivity (see Fig. 4-5). - solid state switches, The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. - contactless solutions to replace micro switches, - position and end point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Current consumption IDDhigh BHYS Magnetic Features: - switching type: unipolar IDDlow - low sensitivity 0 - typical BON: 43.5 mT at room temperature - typical BOFF: 41.5 mT at room temperature BOFF BON B Fig. 4-1: Definition of magnetic switching points for the HAL 573 - typical temperature coefficient of magnetic switching points is -1100 ppm/K - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Typ. Max. Min. Typ. Max. Min. Typ. Max. 40.2 45.7 51.2 37.8 43.5 49.2 0.5 2.2 5 44.6 mT 25 C 38 43.5 49 36 41.5 47 0.5 2 5 42.5 mT 100 C 34 40 46 32 38 44 0.5 2 5 39 mT 140 C 34 38 46 32 36 44 0.2 2 5 39 mT -40 C Min. Typ. Unit Min. Max. The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 18 Micronas HAL573 DATA SHEET mT 50 HAL 573 BON BOFF 45 BON BOFF BON mT 60 HAL 573 BON 55 BOFF 50 BOFF 40 BON BON BOFF BOFF 35 BOFFmax 40 BONtyp TA = -40 C BOFFtyp 35 BONmin TA = 25 C 30 BOFFmin TA = 100 C 30 TA = 125 C 25 BONmax 45 0 5 10 15 20 VDD = 3.75 V 25 30 V VDD = 12-24 V 0 50 100 150 200 C TA, TJ VDD Fig. 4-2: Typ. magnetic switching points versus supply voltage mT 50 25 -50 HAL 573 Fig. 4-4: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON BOFF 45 40 35 TA = -40 C TA = 25 C 30 TA = 100 C TA = 125 C 25 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-3: Typ. magnetic switching points versus supply voltage Micronas 19 HAL574 DATA SHEET 4.2. HAL 574 Applications The HAL 574 is a medium sensitive unipolar switching sensor (see Fig. 4-5). The HAL 574 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. - applications with large airgap or weak magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. - rotating speed measurement. In this two-wire sensor family, the HAL 584 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Current consumption IDDhigh BHYS Magnetic Features: IDDlow - switching type: unipolar - medium sensitivity 0 - typical BON: 9.2 mT at room temperature - typical BOFF: 7.2 mT at room temperature BOFF BON B Fig. 4-5: Definition of magnetic switching points for the HAL 574 - typical temperature coefficient of magnetic switching points is 0 ppm/K - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 8.2 mT 25 C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 8.2 mT 100 C 5.5 9.2 12 5 7.2 11.5 0.5 2 3 8.2 mT 140 C 5 8.8 12.5 3.5 7.5 11.5 0.2 1.9 3.5 8.2 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 20 Micronas HAL574 DATA SHEET mT 12 HAL 574 BON BOFF 10 mT 14 HAL 574 BONmax BON 12 BOFF BON BOFFmax 10 8 BONtyp BOFF 8 6 BOFFtyp 6 BONmin 4 TA = -40 C 4 BOFFmin TA = 25 C TA = 100 C 2 TA = 125 C 0 0 5 10 15 VDD = 12-24 V 20 25 30 V Fig. 4-6: Typ. magnetic switching points versus supply voltage HAL 574 BON BOFF 10 0 -50 0 50 100 150 200 C TA, TJ VDD mT 12 VDD = 3.75 V 2 Fig. 4-8: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 8 BOFF 6 4 TA = -40 C TA = 25 C TA = 100 C 2 TA = 125 C 0 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-7: Typ. magnetic switching points versus supply voltage Micronas 21 HAL575 DATA SHEET 4.3. HAL 575 Applications The HAL 575 is a medium sensitive latching switching sensor (see Fig. 4-9). The HAL 575 is designed for applications with both magnetic polarities and weak magnetic amplitudes at the sensor position such as: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. The current consumption does not change if the magnetic field is removed. For changing the current consumption, the opposite magnetic field polarity must be applied. - applications with large airgap or weak magnets, - multipole magnet applications, - contactless solutions to replace micro switches, - rotating speed measurement. Current consumption For correct functioning in the application, the sensor requires both magnetic polarities on the branded side of the package. IDDhigh BHYS Magnetic Features: IDDlow - switching type: latching - medium sensitivity BOFF - typical BON: 4 mT at room temperature 0 BON B Fig. 4-9: Definition of magnetic switching points for the HAL 575 - typical BOFF: -4 mT at room temperature - typical temperature coefficient of magnetic switching points is 0 ppm/K - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 0.5 4 8 -8 -4 -0.5 5 8 11 0 mT 25 C 0.5 4 8 -8 -4 -0.5 5 8 11 0 mT 100 C 0.5 4 8 -8 -4 -0.5 5 8 11 0 mT 140 C 0.5 4 8 -8 -4 -0.5 5 8 11 0 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 22 Micronas HAL575 DATA SHEET mT 6 mT 9 HAL 575 BONmax BON BON BOFF HAL 575 BON BOFF 4 7 5 BONtyp 2 3 TA = -40 C 0 1 BONmin TA = 25 C -1 TA = 100 C TA = 125 C -2 BOFFmax -3 BOFF -5 BOFFtyp VDD = 3.75-12 V -4 VDD = 24 V -7 BOFFmin -6 0 5 10 15 20 25 30 V Fig. 4-10: Typ. magnetic switching points versus supply voltage BON BOFF 0 50 100 150 200 C TA, TJ VDD mT 6 -9 -50 HAL 575 Fig. 4-12: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 4 2 TA = -40 C TA = 25 C 0 TA = 100 C TA = 125 C -2 BOFF -4 -6 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-11: Typ. magnetic switching points versus supply voltage Micronas 23 HAL576 DATA SHEET 4.4. HAL 576 Applications The HAL 576 is a medium sensitive unipolar switching sensor (see Fig. 4-13). The HAL 576 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. - applications with large airgap or weak magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. - rotating speed measurement. Current consumption Magnetic Features: IDDhigh - switching type: unipolar BHYS - medium sensitivity - typical BON: 5.7 mT at room temperature IDDlow - typical BOFF: 4.2 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BOFF BON B Fig. 4-13: Definition of magnetic switching points for the HAL 576 Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 3.3 5.7 8.2 1.8 4.2 6.7 0.3 1.9 3.5 5 mT 25 C 3.3 5.7 8.2 1.8 4.2 6.7 0.3 1.9 3.5 5 mT 100 C 2.8 5.5 8.3 1.3 4 6.8 0.3 1.9 3.5 5 mT 140 C 2 5.2 8.3 0.3 3.7 7 0.3 1.9 3.5 4.5 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 24 Micronas HAL576 DATA SHEET mT 8 mT 9 HAL 576 HAL 576 BONmax BON BOFF 7 BON BOFF BON 6 8 7 BOFFmax 6 5 BOFF BONtyp 5 4 4 BONmin 3 2 BOFFtyp 3 TA = -40 C TA = 25 C 2 BOFFmin TA = 100 C VDD = 3.75 V 1 0 1 0 5 10 15 20 25 30 V Fig. 4-14: Typ. magnetic switching points versus supply voltage BON BOFF 0 VDD = 24 V 50 100 150 200 C TA, TJ VDD mT 8 0 -50 VDD = 12 V HAL 576 Fig. 4-16: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 7 BON 6 5 BOFF 4 3 TA = -40 C 2 TA = 25 C TA = 100 C 1 0 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-15: Typ. magnetic switching points versus supply voltage Micronas 25 HAL581 DATA SHEET 4.5. HAL 581 Applications The HAL 581 is a medium sensitive unipolar switching sensor with an inverted output (see Fig. 4-17). The HAL 581 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. - applications with large airgap or weak magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. - rotating speed measurement. Magnetic Features: Current consumption - switching type: unipolar inverted IDDhigh - medium sensitivity BHYS - typical BON: 10 mT at room temperature - typical BOFF: 12 mT at room temperature IDDlow - typical temperature coefficient of magnetic switching points is 0 ppm/K 0 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BON BOFF B Fig. 4-17: Definition of magnetic switching points for the HAL 581 Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 11 mT 25 C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 11 mT 100 C 6.5 10 13.8 8 12 15.5 0.5 2 3.5 11 mT 140 C 6.5 10.4 14.3 8 12 16 0.5 2 3.5 11 mT The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 26 Micronas HAL581 DATA SHEET mT 14 HAL 581 BOFF BON 13 BOFF mT 16 HAL 581 BOFFmax BONmax BON 14 BOFF 12 12 11 BOFFtyp 10 BONtyp BON 10 8 9 6 BOFFmin BONmin TA = -40 C 8 TA = 100 C 7 6 4 TA = 25 C VDD = 3.75 V 2 TA = 125 C 0 5 10 15 20 25 30 V Fig. 4-18: Typ. magnetic switching points versus supply voltage HAL 581 BON 13 BOFF 0 50 100 150 C TA, TJ VDD mT 14 0 -50 VDD = 12-24 V Fig. 4-20: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 12 11 BON 10 9 TA = -40 C 8 TA = 25 C TA = 100 C 7 6 TA = 125 C 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-19: Typ. magnetic switching points versus supply voltage Micronas 27 HAL584 DATA SHEET 4.6. HAL 584 Applications The HAL 584 is a medium sensitive unipolar switching sensor with an inverted output (see Fig. 4-21). The HAL 584 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. - applications with large airgap or weak magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. - rotating speed measurement. In this two-wire sensor family, the HAL 574 is a sensor with the same magnetic characteristics but with a normal output characteristic. Current consumption IDDhigh BHYS Magnetic Features: - switching type: unipolar inverted IDDlow - medium sensitivity - typical BON: 7.2 mT at room temperature 0 - typical BOFF: 9.2 mT at room temperature BON BOFF B Fig. 4-21: Definition of magnetic switching points for the HAL 584 - typical temperature coefficient of magnetic switching points is 0 ppm/K - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 8.2 mT 25 C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 8.2 mT 100 C 5 7.2 11.5 5.5 9.2 12 0.5 2 3.0 8.2 mT 140 C 4.5 8 11.5 5.5 9 12.5 0.2 1.9 3.5 8.2 mT The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 28 Micronas HAL584 DATA SHEET mT 12 HAL 584 HAL 584 BOFFmax BOFF BON BOFF 10 mT 14 BON 12 BOFF BONmax 10 8 BOFFtyp 8 BON 6 BONtyp 6 BOFFmin 4 BONmin 4 TA = -40 C TA = 25 C 2 VDD = 3.75 -12 V 2 TA = 100 C VDD = 24 V TA = 125 C 0 0 5 10 15 20 25 30 V Fig. 4-22: Typ. magnetic switching points versus supply voltage HAL 584 BON BOFF 10 0 50 100 150 C TA, TJ VDD mT 12 0 -50 Fig. 4-24: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 8 BON 6 4 TA = -40 C TA = 25 C TA = 100 C 2 TA = 125 C 0 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-23: Typ. magnetic switching points versus supply voltage Micronas 29 HAL57x, HAL 58x DATA SHEET 5. Application Notes 5.2. Extended Operating Conditions WARNING: All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 13). DO NOT USE THESE SENSORS IN LIFESUPPORTING SYSTEMS, AVIATION, AND AEROSPACE APPLICATIONS! 5.1. Application Circuit Figure 5-1 shows a simple application with a two-wire sensor. The current consumption can be detected by measuring the voltage over RL. For correct functioning of the sensor, the voltage between pin 1 and 2 (VDD) must be a minimum of 3.75 V. With the maximum current consumption of 17 mA, the maximum RL can be calculated as: R Lmax + V SUPmin * 3.75 V 17 mA 1 VDD VSUP Typically, the sensors operate with supply voltages above 3 V. However, below 3.75 V, the current consumption and the magnetic characteristics may be outside the specification. Note: The functionality of the sensor below 3.75 V is not tested on a regular base. For special test conditions, please contact Micronas. 5.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 14). During the initialization time, the current consumption is not defined and can toggle between low and high. HAL57x: VSIG RL 2 or x GND After ten(O), the current consumption will be high if the applied magnetic field B is above BON. The current consumption will be low if B is below BOFF. HAL58x x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package In case of sensors with an inverted switching behavior, the current consumption will be low if B > BOFF and high if B < BON. Fig. 5-1: Application Circuit 1 For applications with disturbances on the supply line or radiated disturbances, a series resistor RV (ranging from 10 to 30 ) and a capacitor both placed close to the sensor are recommended (see figure 5-2). In this case, the maximum RL can be calculated as: R Lmax + V SUPmin * 3.75 V * RV 17 mA Note: For magnetic fields between BOFF and BON, the current consumption of the HAL sensor will be either low or high after applying VDD. In order to achieve a defined current consumption, the applied magnetic field must be above BON, respectively, below BOFF. 1 VDD VSUP RV VSIG 4.7 nF RL 2 or x GND x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 5-2: Application Circuit 2 30 Micronas HAL57x, HAL58x DATA SHEET 5.4. Ambient Temperature 5.5. EMC and ESD Due to internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5-3). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. TJ = TA + T At static conditions and continuous operation, the following equation applies: T = IDD * VDD * Rth For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Due to the range of IDDhigh, self-heating can be critical. The junction temperature can be reduced with pulsed supply voltage. For supply times (ton) ranging from 30 s to 1 ms, the following equation can be used: DT + I DD * V DD * R th * t on t off ) t on Applications with this arrangement passed the EMC tests according to the product standards DIN 40839. Note: The international standard ISO 7637 is similar to the product standard DIN 40839. Please contact Micronas for detailed information and first EMC and ESD results. RV1 100 RV2 30 1 VDD VEMC 4.7 nF 2, x GND x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package Fig. 5-3: Recommended EMC test circuit Micronas 31 HAL57x, HAL58x DATA SHEET 6. Data Sheet History 1. Final Data Sheet: "HAL 574...576, 581, 584 TwoWire Hall Effect Sensor Family", April 11, 2002 6251-538-1DS. First release of the final data sheet. Major changes: - "K" temperature range specified - HAL571 and HAL 573 deleted - HAL576 added 2. Final Data Sheet: "HAL 573...576, 581, 584 TwoWire Hall Effect Sensor Family", Nov. 27, 2003 6251-538-2DS. Second release of the final data sheet. Major changes: - specification for HAL 573 added - new package diagrams for SOT89-1 and TO92UA-1 - package diagram for TO92UA-2 added - ammopack diagrams for TO92UA-1/-2 added Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-538-2DS 32 All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. Micronas