2SB1323 / 2SD1997 Ordering number : EN3129A SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1323 / 2SD1997 Compact Motor Driver Applications Features * * * * * Contains input resistance (R1), base-to-emitter resistance (RBE). Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Specifications ( ) : 2SB1323 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)40 V Collector-to-Emitter Voltage VCEO (--)30 V Emitter-to-Base Voltage VEBO (--)6 V IC (--)3 A Collector Current Collector Current (Pulse) Collector Dissipation ICP PC Junction Temperature Tj Storage Temperature Tstg Mounted on ceramic board (250mm20.8mm) (--)5 A 1.5 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Marking : 2SB1323 : BK 2SD1997 : DO Symbol ICBO hFE1 Conditions hFE2 VCB=(--)30V, IE=0A VCE=(--)2V, IC=(--)0.5A VCE=(--)2V, IC=(--)2A fT Cob VCE=(--)2V, IC=(--)0.5A VCB=(--)10V, f=1MHz Ratings min typ max (--)1.0 Unit A 70 50 100 (55)40 MHz pF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20707EA TI IM TC-00000488 / 10904TN (KT) / O1598HA (KT) / 6089MO, TS No.3129-1/4 2SB1323 / 2SD1997 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) VBE(ON) Base-to-Emitter ON State Voltage Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO1 V(BR)CEO2 Diode Forwad Voltage VF RBE R1 Base-to-Emitter Resistance Base Resistance Ratings Conditions min IC=(--)1A, IB=(--)50mA VCE=(--)2V, IC=(--)1A max (--0.18)0.12 (--0.4)0.3 (--)2 (--)5 (--)1 IC=(--)10A, IE=0A IC=(--)10A, RBE= Unit typ (--)40 IC=(--)10mA, RBE= IF=(--)0.5A V V (--)40 V (--)30 V (--)1.5 0.8 120 Package Dimensions V V k 160 200 Electrical Connection unit : mm (typ) 7007A-004 Collector Collector Top View 4.5 1.6 Base 1.5 Base R1 R1 RBE Emitter 4.0 1.0 2.5 RBE Emitter PNP 1 2 NPN 3 0.4 0.4 0.5 1.5 3.0 0.75 1 : Base 2 : Collector 3 : Emitter --1.0 --0.8 --0.6 1.6 1.4 1.2 1.0 0.8 0.6 --0.4 0.4 --0.2 0.2 0 0 0 --1 --2 --3 --4 --5 Base-to-Emitter ON-State Voltage, VBE(ON) -- V ITR09577 --2 5 C --1.2 1.8 75 C C --1.4 2.0 25 --1.6 VCE=2V 2SD1997 Collector Current, IC -- A Collector Current, IC -- A --1.8 IC -- VBE(ON) 2.2 VCE= --2V --2 5 C --2.0 IC -- VBE(ON) 2SB1323 Ta= 75 C 25 C --2.2 SANYO : PCP Ta = Bottom View 0 0.5 1.0 1.5 2.0 2.5 3.0 Base-to-Emitter ON-State Voltage, VBE(ON) -- V ITR09578 No.3129-2/4 2SB1323 / 2SD1997 hFE -- IC 3 VCE= --2V 2SB1323 hFE -- IC 5 2 VCE=2V 2SD1997 3 C 5 =7 5C a T 2 7 5 --2 3 DC Current Gain, hFE DC Current Gain, hFE 2 100 C 5 2 10 --10 3 2 5 7 2 3 5 7 2 3 --100 --1000 Collector Current, IC -- mA ITR09579 3 2 2SB1323 2 3 5 7 100 2 3 5 7 1000 Collector Current, IC -- mA Cob -- VCB 3 2 3 ITR09580 Cob -- VCB 3 f=1MHz 2 2SD1997 f=1MHz 2 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 5 7 5 10 5 100 7 5 3 2 10 100 7 5 3 2 10 7 2 2 3 --10 Collector-to-Base Voltage, VCB -- V --1.0 3 5 7 5 7 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 25 --100 C C 75 5C --2 = Ta 7 5 7 2 3 5 7 2 --1000 Collector Current, IC -- mA --100 2 10 3 5 7 ITR09582 IC / IB=20 2SD1997 7 5 3 2 100 C 25 5C 7 = Ta 7 5 --2 C 5 3 7 30 10 DC op era tio 3 2 0 2 3 5 7 1.0 2 3 5 s n 7 10 5 7 2 Collector-to-Emitter Voltage, VCE -- V 2 1000 3 ITR09584 PC -- Ta 2SB1323 / 2SD1997 M 1.4 Ta=25C Single Pulse For PNP minus sign is omitted. Mounted on a ceramic board (250mm20.8mm) 0.01 0.1 3 1.5 Collector Dissipation, PC -- W 1m s ms IC=3A 1.0 7 5 2 Collector Current, IC -- mA 1.6 ICP=5A 3 2 100 ITR09583 ASO 10 7 5 3 2 7 3 3 0.1 7 5 5 VCE(sat) -- IC 1000 7 3 Collector-to-Base Voltage, VCB -- V IC / IB=20 2SB1323 2 1.0 ITR09581 VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV C 5 =7 5C a T 2 C 5 --2 7 10 7 Collector Current, IC -- A 100 ou nt 1.2 ed on ac er 1.0 am ic bo ar 0.8 d (2 50 m 0.6 m2 0. 8m 0.4 m ) 0.2 3 5 IT11992 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR09585 No.3129-3/4 2SB1323 / 2SD1997 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice. PS No.3129-4/4