2SB1323 / 2SD1997
No.3129-1/4
Features
•Contains input resistance (R1), base-to-emitter resistance (RBE).
•Contains diode between collector and emitter.
•Low saturation voltage.
•Large current capacity.
•Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.
Specifications ( ) : 2SB1323
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)40 V
Collector-to-Emitter Voltage VCEO (--)30 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC(--)3 A
Collector Current (Pulse) ICP (--)5 A
Collector Dissipation PCMounted on ceramic board (250mm2✕0.8mm) 1.5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)30V, IE=0A (--)1.0 µA
DC Current Gain hFE1V
CE=(--)2V, IC=(--)0.5A 70
hFE2V
CE=(--)2V, IC=(--)2A 50
Gain-Bandwidth Product fTVCE=(--)2V, IC=(--)0.5A 100 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (55)40 pF
Marking : 2SB1323 : BK Continued on next page.
2SD1997 : DO
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN3129A
20707EA TI IM TC-00000488 / 10904TN (KT) / O1598HA (KT) / 6089MO, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
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SANYO Semiconductors
DATA SHEET
2SB1323 / 2SD1997
PNP / NPN Epitaxial Planar Silicon Transistors
Compact Motor Driver
Applications
2SB1323 / 2SD1997
No.3129-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)50mA
(--0.18)0.12
(--0.4)0.3 V
Base-to-Emitter ON State Voltage VBE(ON) VCE=(--)2V, IC=(--)1A (--)1 (--)2 (--)5 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--)40 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO1I
C=(--)10µA, RBE=∞(--)40 V
V(BR)CEO2I
C=(--)10mA, RBE=∞(--)30 V
Diode Forwad Voltage VFIF=(--)0.5A (--)1.5 V
Base-to-Emitter Resistance RBE 0.8 kΩ
Base Resistance R1120 160 200 Ω
Package Dimensions Electrical Connection
unit : mm (typ)
7007A-004
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
2.5
4.0
1.0
1.5
0.5
0.4
3.0
4.5
1.6
0.4
123
1.5
0.75
Top View
Bottom View
RBE
Base
Collector
Emitter
PNP
R1
RBE
Base
Collector
Emitter
NPN
R1
IC -- VBE(ON)
IC -- VBE(ON)
Base-to-Emitter ON-State Voltage, VBE(ON) -- V Base-to-Emitter ON-State Voltage, VBE(ON) -- V
Collector Current, IC -- A
Collector Current, IC -- A
VCE= --2V
2SB1323 VCE=2V
2SD1997
ITR09577
0--1--3--2--4--5
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
--2.2
Ta=75
°C
25
°C
--25
°C
ITR09578
0 0.5 1.51.0 2.0 2.5 3.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Ta=75
°C
25
°C
--25
°C
2SB1323 / 2SD1997
No.3129-3/4
A S O PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- W
hFE -- IChFE -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
Collector Current, IC -- mA
DC Current Gain, hFE
VCE(sat) -- IC
VCE(sat) -- IC
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
020406080100 120 140 160
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.5
1.6
ITR09585
2SB1323 / 2SD1997
--
100 23 23577
--
1000
7
--
100
7
--
1000
5
3
5
3
2
ITR09583
IC / IB=20
Ta=75°C
25
°C
--25°C
100 23 235771000
7
100
7
1000
5
3
5
3
2
ITR09584
Ta=75°C
25
°C
--
25
°C
2SB1323 IC / IB=20
2SD1997
IT11992
1ms
DC operation
10ms
ICP=5A
IC=3A
1.0 5732532
0.1 5732 10
0.1
0.01
7
2
5
3
1.0
7
2
5
3
10
7
2
5
3
300µs
ITR09579
35
--
100
--
1000
72
--
10 232357
7
7
100
10
3
2
3
2
5
5
Ta=75
°C
25
°C
--25°C
ITR09580
35 100 1000
72
10 232357
7
100
3
2
3
2
5
7
10
5
5
Ta=75°C
25°C
--25
°C
VCE= --2V VCE=2V
2SD1997
f=1MHz
--
1.0
--
10 223 355777
10
7
100
5
3
3
2
2
ITR09581 1.0 10 223 355777
10
7
100
5
3
3
2
2
ITR09582
2SB1323
2SB1323 f=1MHz
2SD1997
Ta=25°C
Single Pulse
For PNP minus sign is omitted.
Mounted on a ceramic board (250mm
2
✕0.8mm)
Mounted on a ceramic board (250mm2✕0.8mm)
2SB1323 / 2SD1997
No.3129-4/4
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PS
This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.
