LVXYU-ZX IX"7MOSFET LVX Series Power MOSFET BRAT YFG N-F RIL, DY NYAXY hw Mi4tA2 tA] =OUTLINE DIMENSIONS 25K1812 (F30W30] 300V 30A @AABE Ciss) MAL, ay b acsg (PA) Date code [Unit : mm] 5.9 +03 a RC BONA PAROAABEDUNSL. m & O77 VEDA. EIAY No. OA VF VISA LRU. eee ORRRARE @ Gate __ | 0.65 02 Oss. APRAESOOC/DCIVIN-F @) Drain @0C 12--48VA AOSHI @) Source . @ Mrtwx RATINGS @MXRAEK Absolute Maximum Ratings OW aly & ag SE Rif Item Symbol Conditions Ratings Unit PRPS a Storage Temperature Tstg 55~150 C Fry RAR 7 Channel Temperatura Teh 150 Cc Fo4y- J 2M Drain - Source Voltage Voss 300 V Fob YA B Gate + Source Voltage Voss +30 V Re 4 2 at DC Ip 30 Continuous Drain Current A Peak Ibe 60 J ARR (BR) Continuous Source Currant (DC) Is 30 A SRK = 9% Total Power Dissipation Pr Tc=25C 120 W MOET BL 7 (HESIA Ske - cm) Mounting Torque TOR (Recommended torque 1 5kg - om) 8 kg-cm @G AA) - HASTE Electrical Characteristics (Te=25'C) a A als & tf SRASA Ratings | BT Item Symbol Conditions min. | typ. | max. | Unit FL 44+ J ZBEER REE = _ Drain - Source Breakdown Voltage Vipripss| I>=1ImA, Vos=0V 300 V Fe 4 > eT aR = = Zero Gate Voltage Drain Current Ipss Vos=300V, Vas=0V 250 | pA sae Seu Ioss_ | Vos=+30V, Vos=0V +100] nA Gate - Source Leakage Current GSS os , DS= i. MEI PHL _ _ Forward Transconductance Bfs Ip=15A, Vos=10V 4.5 9 Ss Flay 7AMS > BER _ _ Static DrainSource On state Resistance Rosiow)| Ib=15A, Vas=10V 0.17 | 0.23 7} LS MARE Gate Threshold Voltage Vr | Ib=lmA, Vos=10V 2 3 4 Yu ELT YAS fa FA _ _ Source * Drain Diode Forward Voltage Vsp_ | Is=15A, Vos=0V 1.5 V SUE bt 7, | deeb 7 2 fi 4 Thermal Resistance a je junction and case 1.04 C/W Gate Charge Chur ccteristie Q g Vos=10V, Ib=30A, Voo=200V, 59 nc ANKBE . input Capacitance Ciss 2 ,150 pF ae Crss_ | Vos=10V, Vos=0V, f =1MHz 255 F Reverse Transfer Capacitance 188 DS , a=0V, f p He Output Capacitance Coss 715 pF Furn-on Time t 190 | 380 on Ti on _ is ere Ib=15A, Vos=10V, Ri=100 Turn-off Time toff 240 480 ns