MMRF2006NT1
1
RF Device Data
Freescale Semiconductor, Inc.
RF LDMOS Wideband Integrated
Power Amplifier
The MMRF2006N wideband integrated circuit is designed with on--chip
matching that makes it usable from 1805 to 2170 MHz. This multi--stage
structure is rated for 26 to 32 V operation and can be used in many RF
amplifier modulation formats.
Driver Application — 2100 MHz
Typical Single--Carrier W--CDMA Performance: VDD =28Vdc,I
DQ1 =
40 mA, IDQ2 = 230 mA, Pout = 2.4 W Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF.
Frequency Gps
(dB) PAE
(%) Output PAR
(dB) ACPR
(dBc)
2110 MHz 32.6 16.8 7.7 --51.3
2140 MHz 32.6 17.0 7.6 --51.4
2170 MHz 32.4 17.0 7.5 --51.6
Capable of Handling 10:1 VSWR @ 32 Vdc, 2140 MHz, Pout =33W
CW (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point ≃20 W CW
Driver Application — 1800 MHz
Typical Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQ1 =40mA,I
DQ2 = 230 mA, Pout = 2.4 W Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF.
Frequency Gps
(dB) PAE
(%) Output PAR
(dB) ACPR
(dBc)
1805 MHz 31.8 17.4 7.6 --51.2
1840 MHz 31.8 17.4 7.7 --50.2
1880 MHz 31.8 17.4 7.7 --51.0
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
Integrated ESD Protection
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel.
Figure 1. Functional Block Diagram Figure 2. Pin Connections
VGS2
VGS1
1
RFin
Quiescent Current
Temperature Compensation (1)
RFin RFout/VDS2
VDS1
2
3
4
5
67 8 9 10 11 12
18
17
16
15
14
13
24 23 22 21 20 19
GND
GND
NC
VDS1
VDS1
VGS1
VGS2
RFin
NC
NC
NC
NC
NC
NC
NC
RFout/VDS2
RFout/VDS2
NC
NC
NC
NC
NC
NC
1. RefertoAN1977,QuiescentCurrent Thermal Tracking Circuit in the RF Integrated Circuit Family,andtoAN1987,Quiescent Current Control
fortheRFIntegratedCircuitDeviceFamily.Gotohttp://www.freescale.com/rf.SelectDocumentation/ApplicationNotes--AN1977orAN1987.
1805--2170 MHz, 20 W CW, 28 V
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
MMRF2006NT1
PQFN 8 8
PLASTIC
Document Number: MMRF2006N
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2014.
A
ll rights reserved.
2RF Device Data
Freescale Semiconductor, Inc.
MMRF2006NT1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Operating Junction Temperature (1,2) TJ150 C
Input Power Pin 37 dBm
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 84C, 2.4 W CW
Stage 1, 28 Vdc, IDQ1 = 40 mA, 2140 MHz
Stage 2, 28 Vdc, IDQ2 = 230 mA, 2140 MHz
Case Temperature 92C, 24 W CW
Stage 1, 28 Vdc, IDQ1 = 40 mA, 2140 MHz
Stage 2, 28 Vdc, IDQ2 = 230 mA, 2140 MHz
RJC
9.0
1.9
8.6
1.6
C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) III
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc) IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc) IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =1.5Vdc,V
DS =0Vdc) IGSS — — 1 Adc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=12Adc) VGS(th) 1.0 2.0 3.0 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
DQ1 =40mAdc) VGS(Q) —2.9 —Vdc
Fixture Gate Quiescent Voltage
(VDD =28Vdc,I
DQ1 = 40 mAdc, Measured in Functional Test) VGG(Q) 6.2 6.9 7.7 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955. (continued)
MMRF2006NT1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc) IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc) IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =1.5Vdc,V
DS =0Vdc) IGSS — — 1 Adc
Stage 2 — On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=75Adc) VGS(th) 1.0 2.0 3.0 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
DQ2 = 230 mAdc) VGS(Q) —2.8 —Vdc
Fixture Gate Quiescent Voltage
(VDD =28Vdc,I
DQ2 = 230 mAdc, Measured in Functional Test) VGG(Q) 4.7 5.5 6.2 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=0.75Adc) VDS(on) —0.3 0.8 Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ1 =40mA,I
DQ2 = 230 mA, Pout = 2.4 W Avg.,
f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 31.0 32.6 36.0 dB
Power Added Efficiency PAE 16.0 17.0 — %
Adjacent Channel Power Ratio ACPR —--51.4 --47.0 dBc
Input Return Loss IRL — -- 12 -- 1 0 dB
Typical Performance over Frequency — 2100 MHz (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ1 =40mA,I
DQ2 =
230 mA, Pout = 2.4 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Frequency Gps
(dB) PAE
(%) Output PAR
(dB) ACPR
(dBc) IRL
(dB)
2110 MHz 32.6 16.8 7.7 --51.3 -- 1 4
2140 MHz 32.6 17.0 7.6 --51.4 -- 1 2
2170 MHz 32.4 17.0 7.5 --51.6 -- 11
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ1 =40mA,I
DQ2 = 230 mA, 2110--2170 MHz Bandwidth
Characteristic Symbol Min Typ Max Unit
Pout @ 1 dB Compression Point, CW P1dB —20 — W
IMD Symmetry @ 9 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym —25 —MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point) VBWres —90 —MHz
Quiescent Current Accuracy over Temperature (2) Stage 1
with2kGate Feed Resistors (--30 to 85C) Stage 2 IQT —
—0.00
3.70 —
—%
Gain Flatness in 60 MHz Bandwidth @ Pout =2.4WAvg. GF—0.2 —dB
Gain Variation over Temperature
(--30Cto+85C) G — 0.045 —dB/C
Output Power Variation over Temperature
(--30Cto+85C) P1dB —0.004 —dB/C
1. Part internally input matched.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent
Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application
Notes -- AN1977 or AN1987. (continued)
4RF Device Data
Freescale Semiconductor, Inc.
MMRF2006NT1
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Typical Performance over Frequency — 1800 MHz (In Freescale 1800 MHz Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ1 =40mA,
IDQ2 = 230 mA, Pout = 2.4 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Frequency Gps
(dB) PAE
(%) Output PAR
(dB) ACPR
(dBc) IRL
(dB)
1805 MHz 31.8 17.4 7.6 --51.2 -- 1 3
1840 MHz 31.8 17.4 7.7 --50.2 -- 9
1880 MHz 31.8 17.4 7.7 --51.0 -- 6
MMRF2006NT1
5
RF Device Data
Freescale Semiconductor, Inc.
Figure 3. MMRF2006NT1 Test Circuit Component Layout
VGG1
R1
VGG2
R2
C1
C2
VDD1
C4
C5
C6 C15
C14
C13
VDD2
C9
C8
C7
C3
C12
C11
C10
VDD2
Table 6. MMRF2006NT1 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 1.2 pF, Chip Capacitor ATC600F1R2BT250XT ATC
C2, C3, C11, C14 4.7 F, 50 V Chip Capacitors GRM31CR71H475KA12L Murata
C4, C9, C10, C13 33 pF Chip Capacitors ATC600F330JT250XT ATC
C5 1.0 F, 100 V Chip Capacitor GRM31CR72A105KA01L Murata
C6, C12, C15 10 F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C7 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC
C8 0.6 pF Chip Capacitor ATC600F0R6BT250XT ATC
R1, R2 4.7 k, 1/4 W Chip Resistors CRCW12064K70FKEA Vishay
PCB Rogers RO4350B, 0.020,r= 3.66 —MTL
6RF Device Data
Freescale Semiconductor, Inc.
MMRF2006NT1
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
2060
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 2.4 Watts Avg.
-- 1 6
-- 8
-- 1 0
-- 1 2
-- 1 4
32
33
32.9
32.8
-- 5 2
18
17
16
15
-- 4 7
-- 4 8
-- 4 9
-- 5 0
PAE, POWER ADDED
EFFICIENCY (%)
Gps, POWER GAIN (dB)
32.7
32.6
32.5
32.4
32.3
32.2
2080 2100 2120 2140 2160 2180 2200 2220
14
-- 5 1
-- 1 8
PARC
PARC (dB)
0
0.4
0.3
0.2
0.1
-- 0 . 1
ACPR (dBc)
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
32.1
VDD =28Vdc,P
out =2.4W(Avg.),I
DQ1 =40mA
IDQ2 = 230 mA PAE
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
VDD =28Vdc,P
out = 9 W (PEP)
IDQ1 =40mA,I
DQ2 = 230 mA
-- 6 0
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
5
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
0101525
8
50
43
36
29
22
15
PAE, POWER ADDED EFFICIENCY (%)
--1dB=5.7W
20
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
ACPR
PARC
ACPR (dBc)
-- 7 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
-- 4 0
-- 6 0
34
Gps, POWER GAIN (dB)
32
30
28
26
24
22
Gps PAE
VDD =28Vdc,I
DQ1 =40mA
IDQ2 = 230 mA, f = 2140 MHz
Single--Carrier W--CDMA
--2dB=7.8W
--3dB=10.4W
MMRF2006NT1
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Power
Added Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
23
35
0
60
50
40
30
20
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
33
31
10 40
10
-- 6 0
ACPR (dBc)
29
27
25
0
-- 3 0
-- 4 0
-- 5 0
Figure 8. Broadband Frequency Response
0
36
1350
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ1 =40mA
IDQ2 = 230 mA
24
18
12
1550
GAIN (dB)
30 Gain
1750 1950 2150 2350 2550 2750 2950
IRL
-- 1 8
0
-- 3
-- 6
-- 9
-- 1 2
IRL (dB)
6--15
PAE
2170 MHz
2110 MHz
2140 MHz
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
VDD =28Vdc,I
DQ1 =40mA,I
DQ2 = 230 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
2110 MHz
2140 MHz
2170 MHz
8RF Device Data
Freescale Semiconductor, Inc.
MMRF2006NT1
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
MMRF2006NT1
9
RF Device Data
Freescale Semiconductor, Inc.
VDD =28Vdc,I
DQ1 =40mA,I
DQ2 = 230 mA, Pout =2.4WAvg.
f
MHz Zin
Zload
2060 53.3 -- j50.4 7.28 -- j4.02
2080 50.9 -- j50.9 7.28 -- j3.92
2100 47.8 -- j51.0 7.28 -- j3.82
2120 45.0 -- j51.3 7.30 -- j3.74
2140 41.7 -- j51.0 7.32 -- j3.68
2160 39.4 -- j49.6 7.33 -- j3.61
2180 37.4 -- j48.5 7.35 -- j3.54
2200 36.1 -- j47.2 7.38 -- j3.49
2220 34.9 -- j45.9 7.42 -- j3.46
Zin = Device input impedance as simulated from
gate to ground.
Zload = Test circuit impedance as simulated from
drain to ground.
Figure 11. Series Equivalent Input and Load Impedance
Device
Under Test
Output
Matching
Network
Zin Zload
10 RF Device Data
Freescale Semiconductor, Inc.
MMRF2006NT1
VDD =28Vdc,I
DQ1 =30mA,I
DQ2 = 195 mA, CW
f
(MHz) Zin
()Zload (1)
()
Max Output Power
P1dB P3dB
(dBm) (W) PAE (%) (dBm) (W) PAE (%)
2110 42.0 -- j42.0 8.0 -- j10.1 45.5 36 51.3 46.0 40 50.9
2140 42.6 -- j42.0 7.8 -- j10.4 45.5 36 50.7 46.0 39 50.4
2170 39.0 -- j45.0 7.5 -- j10.5 45.3 34 50.3 45.8 38 50.2
(1) Load impedance for optimum P1dB power.
Zin = Impedance as measured from input contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 12. Load Pull Performance — Maximum P1dB Tuning
Device
Under Test
Output
Load Pull
Tuner
Zin Zload
VDD =28Vdc,I
DQ1 =30mA,I
DQ2 = 195 mA, CW
f
(MHz) Zin
()Zload (1)
()
Max Power Added Efficiency
P1dB P3dB
(dBm) (W) PAE (%) (dBm) (W) PAE (%)
2110 43.0--j48.0 8.1--j4.5 44.3 27 57.2 44.8 30 55.4
2140 42.0--j48.0 7.6--j5.3 44.4 28 56.6 44.8 30 54.8
2170 36.5--j50.0 7.1--j5.8 44.3 27 56.0 44.7 30 54.5
(1) Load impedance for optimum P1dB efficiency.
Zin = Impedance as measured from input contact to ground.
Zload = Impedance as measured from drain contact to ground.
Figure 13. Load Pull Performance — Maximum Power Added Efficiency Tuning
Device
Under Test
Output
Load Pull
Tuner
Zin Zload
MMRF2006NT1
11
RF Device Data
Freescale Semiconductor, Inc.
Figure 14. MMRF2006NT1 Test Circuit Component Layout — 1800 MHz
VGG1
VGG2
VDD1 VDD2
VDD2
R2
C1
R1
L1 C2 C3
C4
C5
C14
C13
C12
C9 C10 C11
C6
C7
C8
C15
C16 C17
Table 7. MMRF2006NT1 Test Circuit Component Designations and Values — 1800 MHz
Part Description Part Number Manufacturer
C1, C6, C12, C15 33 pF Capacitors ATC600F330JT250XT ATC
C2 1.1 pF Chip Capacitor ATC600F1R1BT250XT ATC
C3 1.6 pF Chip Capacitor ATC600F1R6BT250XT ATC
C4, C5, C13, C16 4.7 F, 50 V Chip Capacitors GRM31CR71H475KA12L Murata
C7 1.0 F, 100 V Chip Capacitor GRM31CR72A105KA01L Murata
C8, C14, C17 10 F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C9 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC
C10 0.5 pF Chip Capacitor ATC600F0R5BT250XT ATC
C11 10 pF Capacitors ATC600F100JT250XT ATC
L1 12 nH Chip Inductor L0805120JESTR AVX
R1, R2 4.7 k, 1/4 W Chip Resistors CRCW12064K70FKEA Vishay
PCB Rogers RO4350B, 0.020,r= 3.66 —MTL
12 RF Device Data
Freescale Semiconductor, Inc.
MMRF2006NT1
TYPICAL CHARACTERISTICS — 1800 MHz
IRL, INPUT RETURN LOSS (dB)
1760
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 15. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 2.4 Watts Avg.
-- 1 7
-- 5
-- 8
-- 11
-- 1 4
31.3
32.3
32.2
32.1
-- 5 3
19
18
17
16
-- 4 8
-- 4 9
-- 5 0
-- 5 1
PAE, POWER ADDED
EFFICIENCY (%)
Gps, POWER GAIN (dB)
32
31.9
31.8
31.7
31.6
31.5
1780 1800 1820 1840 1860 1880 1900 1920
15
-- 5 2
-- 2 0
PARC
PARC (dB)
-- 0 . 1
0.3
0.2
0.1
0
-- 0 . 2
ACPR (dBc)
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
31.4
VDD =28Vdc,P
out =2.4W(Avg.)
IDQ1 =40mA,I
DQ2 = 230 mA
PAE
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 16. Single--Carrier W--CDMA Power Gain, Power
Added Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
22
34
0
60
50
40
30
20
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
32
30
10 40
10
-- 6 0
ACPR (dBc)
28
26
24
0
-- 3 0
-- 4 0
-- 5 0
PAE
1880 MHz
1805 MHz
1840 MHz
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
VDD =28Vdc,I
DQ1 =40mA,I
DQ2 = 230 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
Figure 17. Broadband Frequency Response
0
36
1400
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ1 =40mA
IDQ2 = 230 mA
24
18
12
1525
GAIN (dB)
30 Gain
1650 1775 1900 2025 2150 2275 2400
IRL
-- 2 4
0
-- 4
-- 8
-- 1 2
-- 1 6
IRL (dB)
6--20
1880 MHz
1840 MHz
1805 MHz
MMRF2006NT1
13
RF Device Data
Freescale Semiconductor, Inc.
VDD =28Vdc,I
DQ1 =40mA,I
DQ2 = 230 mA, Pout =2.4WAvg.
f
MHz Zin
Zload
1760 46.6 + j14.0 14.4 -- j7.06
1780 54.0 + j15.2 14.0 -- j6.89
1800 62.4 + j14.5 13.6 -- j6.71
1820 70.8 + j11.4 13.2 -- j6.53
1840 78.8 + j5.70 12.9 -- j6.34
1860 85.2 -- j2.64 12.6 -- j6.14
1880 88.8 -- j12.5 12.4 -- j5.94
1900 89.2 -- j22.9 12.1 -- j5.74
1920 86.7 -- j32.6 11.9 -- j5.53
Zin = Device input impedance as simulated from
gate to ground.
Zload = Test circuit impedance as simulated from
drain to ground.
Figure 18. Series Equivalent Input and Load Impedance — 1800 MHz
Device
Under Test
Output
Matching
Network
Zin Zload
14 RF Device Data
Freescale Semiconductor, Inc.
MMRF2006NT1
PACKAGE DIMENSIONS
MMRF2006NT1
15
RF Device Data
Freescale Semiconductor, Inc.
16 RF Device Data
Freescale Semiconductor, Inc.
MMRF2006NT1
MMRF2006NT1
17
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0July 2014 Initial Release of Data Sheet
18 RF Device Data
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MMRF2006NT1
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Document Number: MMRF2006N
Rev. 0, 7/2014
