2N5038 20 AMPERES NPN SILICON POWER TRANSISTOR .:?:: . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wideband amplifiers and power oscillators in industrial and commercial applications. e, High speed TF max. = 0.5 ps Low saturation VCE(sat) = 1.O'V (max.) @ Ic = 12A ,., h:;),, .4, MAXIMUM RATINGS Rating Collector-Emitter Collector-Base Emitter-Base Symbol Voltage `CEO Voltage Voltage Collector-Current - continuous -paak Operating (VBE = -1.5 (pw<l V) VCEX I c;,: Ores) ,.W3,>> continuous > Vdc 20 Adc Apk "30' = 25 `C 5 Adc 140 Watts and Storage Junction Temperature `c ,~?'..b ~\,}* Range r ~dc $$50 "%$,, ,.$:,\;>t#* @Tc ~~' `$/$ . .',,? .,' 15W*> ,,,.<,,..... `"J , .t:~ Vdc `-*S'" Vdc VEgo Voltage Total Power Dissipation 90 (SUS) VCBO Collector-Emitter Base-Current Value -65 m to 200 :~ a 2" +-- H 11 G STYLE 1: PIN 1. BASE 2. EMITTER CASE-COLLECTOR All JEOEC Tc, TEMPERATURE cl!nltellsiot)s;IIIII tIrIles CASE (%) 1.03 (TO.31 I ~IpIIlv ,, `y<:.. `*r*: There are two limitations on the power handling abilit~ef~~:, ,transistor: ,average junction temperature and second!~r~~ `down. Safe operating area cuyes indicate lC:V~~~@.Wf the transistor that must be observed for reliq~~~\@~&~htion i.e., the transistor must. not be subjected \@~R~.~~@~issiPa,+.{,:;".,$x.. .. tion than the curves indicate, "%* - `{' The data of figure 2 is based on ,X@.~@~; TJ (pk) is variable. depending on power lef~,\kSMond breakdown . , ,t. limitations do not derate the sa~ as t~-mal limitations, At high casetemperatures, the~w~~~~itations will reduce the power that can handled &&H~pY~ess than the limitations imposed by second br64&wn"?&ee AN41 5A) 10 `*>., ` "~ Vcc = 150 v = 8 161= 162 lc/lB ~--., I s 1 r t .-" I ,,-- " cc y130v , I f I 2N 503,8 IC -: 12 AnlI>s I[jl `= IB2- ," ., MOTOROLA Semiconductor Products Inc. @ ~~ 1.2 Amps ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise Characteristic I noted) Min. Symbol I " Max. I Unit I .?..,... Second Braakdown Collector (VCE=28V, t=ls) (vcE=45v, t=l Second Braakdown (V6E = 4V, (Ic= 12A, Current with Base Forward Biased ,,,,..:..,, N:{ \ S) 13 L=180MH) (VCC = 30 Vdc, [c =12 lBl=l.2A, lg2=l.2A) A, Fall Time Pulse Test: 0.9 mj RBE = 20 ~) Rise Time (1) Adc `5 Energv .,.* Storage Time ,~/b `%+ ,,$~\+/,, ,i~::,k ~~+ Pulse Width = 300@, ""m DutV Cycle MOTOROLA < `~ tr -- t~ -- 1.5 tf -- 0.5 0.5 2/0. ps .*" Sep iconductor Products Inc.