NPN SILICON POWER TRANSISTOR
... fast switching speeds and high current capacity ideally suit
these parts for use in switching regulators, inverters, wideband
amplifiers and power oscillators in industrial and commercial
applications.
e, High speed TF max. =0.5 ps
●Low saturation VCE(sat) =1.O’V (max.) @Ic =12A
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2N5038
20 AMPERES .:?::
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MAXIMUM RATINGS
Rating Symbol Value
Collector-Emitter Voltage ‘CEO (SUS) 90 ~~’ ‘$/$ ~dc
Collector-Base Voltage VCBO 15W*> ‘“J.t:~ Vdc
..’,,? .,’
,,,.<,,..... ,
Emitter-Base Voltage VEgo ‘-*S’” Vdc
Collector-Emitter Voltage (VBE =–1.5 V) VCEX >$$50 Vdc
Collector-Current –continuous Ic;,: “%$,, 20 Adc
–paak (pw<l Ores) ,.W3,>> “30’ Apk
Base-Current continuous ,.$:,\;>t#* 5Adc
Total Power Dissipation @Tc =25 ‘C 140 Watts
Operating and Storage Junction ‘c
Temperature Range ,~?’..b
~\,}* –65 to 200
r:~ m
a
2“
+—
H11❑
G
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE-COLLECTOR
All JEOEC cl!nltellsiot)s;IIIII tIrIles ~IpIIlv
CASE 1.03
(TO.31
Tc, TEMPERATURE (%)
I
,, ‘y<:.. ‘*r*:
There are two limitations on the power handling abilit~ef~~:,
,transistor: ,average junction temperature and second!~r~~
‘down. Safe operating area cuyes indicate lC:V~~~@.Wf
the transistor that must be observed for reliq~~~\@~&~htion
i.e., the transistor must.not be subjected \@~R~.~~@~issiPa-
tion than the curves indicate, ,+.{,:;”.,$x.. ..
“%* -‘{’
The data of figure 2is based on ,X@.~@~; TJ(pk) is
variable. depending on power lef~,\kSMond breakdown
. , ,t.
limitations do not derate the sa~ ast~-mal limitations,
At high casetemperatures, the~w~~~~itations will reducethe
power that can handled &&H~pY~ess than the limitations
imposed by second br64&wn”?&ee AN41 5A)
I,,––
10 ‘*>., ‘“~ Vcc =150v~—.- .-“
r
lc/lB =8,s,“cc
1tIfI
161=162 Iy130v
2N 503,8
IC -: 12 AnlI>s
I[jl ‘= IB2- 1.2 Amps
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MOTOROLA Semiconductor Products Inc. @~~
ELECTRICAL CHARACTERISTICS (Tc =25°C unless otherwise noted)
Characteristic ISymbol Min. I“Max. IUnit I
.?..,...
Second Braakdown Collector Current with Base Forward Biased ,~/b ‘%+ Adc
(VCE=28V, t=ls) ,,$~\+/,,
,i~::,k ~~+ ‘5
(vcE=45v, t=l S) ,,,,..:..,,
\N:{ 0.9
Second Braakdown Energv mj
(V6E =4V, RBE =20 ~) 13
(Ic= 12A, L=180MH) .,.* ‘~
Rise Time tr —
(VCC =30 Vdc, [c =12 A, 0.5 ps
Storage Time lBl=l.2A, lg2=l.2A) t~ —1.5
Fall Time tf —0.5
(1) Pulse Test: Pulse Width =300@, DutV Cycle <2°/0. .*”
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MOTOROLA Sep iconductor Products Inc.
