EAMOSPEC HIGH POWER NPN SILICON TRANSISTORS The 2N6259 is power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and dc to de converters or inverters. FEATURES: * High Power Dissipation Pp = 150 W (T, = 25C) * High DC Current Gain and Low Saturation Voltage hFE = 15-60 @ 1, =8A, Vop =2V Vegsat) = 1-0 V (Max.) @ |, =8A, 1, =0.8A MAXIMUM RATINGS NPN 2N6259 16 AMPERE POWER TRANSISTORS NPN SILICON 150 VOLTS 150 WATTS Characteristic Symbol Rating Unit Collector-Emitter Voltage Vegoisus) 150 V Collector-Emitter Voltage Veex 170 Vv Collector-Base Voltage Vepo 170 Vv Emitter-Base Voltage Veso 7 V Collector Current-Continuous Io 16 A Peak (1) low 30 Base Current-Continuous lp 4.0 A Peak (1) lem 15 Total Power Dissipation @T,=25C 150 Ww Derate above 25C Py 0.857 w/c Operating and Storage Junction Ty. Tst C Temperature Range -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Reje 1.17 CAN FIGURE -1 POWER DERATING g N N = N Ol 8 N a 8 a Z Pp , POWER DISSIPATION(WATTS) o 2 50 75 100 125 150 175 200 To , TEMPERATURE(C) o PIN 1.BASE 2.EMITTER COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 38.75 | 30.96 B 19.28 | 22.23 Cc 7.96 9.28 D 11.18 | 12.19 E 25.20 | 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 | 30.40 t 16.64 | 17.30 J 3.88 436 K 10.67 | 11.182N6259 NPN a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Vegoisus) Vv (1, = 100 mA, |, = 0) 150 Collector Cutoff Current lcEo mA ( Voge = 130 V, I, = 0) 10 Collector Cutoff Current loex mA (Veg = 150 V, Vegiorr) = 1-5V ) 2.0 Collector Cutoff Current lego mA ( Veg = 150 V, I; = 0) 2.0 Emitter Cutoff Current leso mA (Veg = 7.0 V, I, =0) 5.0 ON CHARACTERISTICS (1) DC Current Gain he (1g =8.0A, Vog = 2.0V) 15 60 (lg = 16 A, Vop = 4.0 V 10 Collector - Emitter Saturation Voltage Vce(sat) Vv (lg =8.0A, lz =800 mA) 1.0 (1, = 16A, Ip =3.2A) 2.5 Base - Emitter On Voltage VBE(ON) Vv (1g = 8.0A, Veg = 2.0V) 2.0 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0%2N6259 NPN a a DC CURRENT GAIN "ON" VOLTAGES 2.0 leflg=t0 16 Zz 3 e Ee E a 12 wu 2 : 4 Oo < 5 08 a a 2. > 0.4 Vee(set) ee 5 0 02 03 05 4 2 5 7 10 41620 02 0.3 05 07 1.0 2.0 3.0 5.0 7.0 10 20 Ie , COLLECTOR CURRENT (AMP) IC , COLLECTOR CURRENT (AMP) COLLECTOR SATURATION REGION 2.0 Ty=25C 16 42 0.8 0.4 Voce , COLLECTOR EMITTER VOLTAGE (VOLTS) 0.05 0.1 02 03 05 07 10 20 63.0 ig, BASE CURRENT (AMPS) FORWARD BIAS SAFE OPERATING AREA (SOA) x x = < 7 10 us There are two limitation on the power handling ability ~ => > 40us of a transistor:average junction temperature and second 400 us breakdown safe operating area curves _ indicate lo-VcE 200 us limits of the transistor that must be observed for reliable ims operation i.e., the transistor must not be subjected to 100 ms greater dissipation than curves indicate. The data of SOA curve is base on Typq=200 C:Te is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided Tyerg$ 200C, At high case temperatures, thermal limita- tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 500ms - Bondng Wire Limit _ Thermal Linited 1,=25C (Single Puse) - Second Breakdown Linit lg, COLLECTOR CURRENT (Amp) 3 5 7 10 20 50 70 100 200 300 Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS)