Industrial and Multi-Market
Data Sheet
Revision 2.0, 2010-12-15
Final
ESD8V0R1B Series
Bi-directional Low Capacitance TVS Diode
ESD8V0R1B-02EL
ESD8V0R1B-02ELS
TVS Diodes
Transient Voltage Suppressor Diodes
Edition 2010-12-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The infor matio n given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the ap plication of the device, Infineon Technologies hereby d isclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please co ntact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
ESD8V0R1B Series
Final Data Sheet 3 Revision 2.0, 2010-12-15
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design S ystems, Inc. VLY NQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Upda te 2010-06-09
Revision History
Page or Item Subjects (major cha nges since previous revision)
Revision 1.0, 2010-10-20
Revision 2.0, 2010-12-15
Carrier Tape drawing for TSSLP-2-2 Package updated
ESD8V0R1B Series
Table of Contents
Final Data Sheet 4 Revision 2.0, 2010-12-15
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1 Bi-directional Low Capacitance TVS Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.2 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.1 Electrical Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.2 Typical Performance characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . 10
4 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6.1 PG-TSLP-2-18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6.2 PG-TSSLP-2-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table of Contents
ESD8V0R1B Series
List of Figures
Final Data Sheet 5 Revision 2.0, 2010-12-15
Figure 1 a) Pin Configuration and b) Schematic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 2 Definitions of electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 3 Non-repetitive peak pulse power: Ppk = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 4 Power derating curve: Ppk = f (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5 Reverse characteristic, IR = (VR), TA = parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 6 Line capacitance CL = f(VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 7 1 Line, bi-directional protection with ESD diode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 8 Ordering Information Scheme (examples) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 9 PG-TSLP-2-18: Package Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 10 PG-TSLP-2-18: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 11 PG-TSLP-2-18: Packing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 12 PG-TSLP-2-18: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 13 PG-TSSLP-2-2: Package Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 14 PG-TSSLP-2-2: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 15 PG-TSSLP-2-2: Packing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 16 PG-TSSLP-2-2: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
List of Figures
ESD8V0R1B Series
List of Tables
Final Data Sheet 6 Revision 2.0, 2010-12-15
Table 1 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 2 Maximum Rating at TA = 25 °C, unless otherwise specified. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 3 DC characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 4 RF characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 5 ESD characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
List of Tables
ESD8V0R1B Series
Bi-directional Low Capacitance TVS Diode
Final Data Sheet 7 Revision 2.0, 2010-12-15
1 Bi-directional Low Capacitance TVS Diode
1.1 Features
ESD / Transient protection of data lines in 3.3 / 5 / 12 V applications according to :
IEC61000-4-2 (ESD) : ±20 kV (air) and ±18 kV (contact)
IEC61000-4-4 (EFT) : 40 A (5/50ns)
Extremely small form factor down to 0.62 x 0.32 x 0.31 m
Maximum working voltage: VRWM = -8 / +14 V
Very low reverse current: IR < 1 nA (typical)
Very low series inducttance down to : LS = 0.2 nH (typical)
Low capacitance CL = 4 pF I/O to GND (typical)
Pb-free and Halogen-Free package (RoHS compliant)
1.2 Application Examples
Keypad, touchpad, buttons, convenience keys
LCD displays, Camera, audio lines, mobile communication, Consumer products (E-Book, MP3, DVD, DSC, ...)
Notebooks tablets and desktop computers and their peripherals
2 Product Description
Figure 1 a) Pin Configuration and b) Schematic Diagram
Table 1 Ordering information
Type Package Configuration Marking code
ESD8V0R1B-02EL PG-TSLP-2-18 1 line, bi-directional R
ESD8V0R1B-02ELS PG-TSSLP-2-2 1 line, bi-directional D
b) S c hem atic diagr am
Pin 2
Pin 1
a) P in c onfiguration
Pin 1 Pin 2
Pin 1 Pin 2
TSLP-2
TSSLP-2
ESD8V0R1B Series
Characteristics
Final Data Sheet 8 Revision 2.0, 2010-12-15
3 Characteristics
3.1 Electrical Characteristics at TA = 25 °C, unless otherwise specified
Figure 2 Definitions of electrical characteristics
Table 2 Maximum Rating at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
Min. Typ. Max.
ESD air discharge1) VESD -20 20 kV
ESD contact discharge1)
1) VESD according to IEC61000-4-2
VESD -18 18 kV
Peak pulse current (tp = 8/20 µs)2)
2) IPP according to IEC61000-4-5
IPP -1 1 A
Operating temperature TOP -55 150 °C
Storage temperage Tstg -65 150 °C
Table 3 DC characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Reverse working voltage VRWM -8 14 V from Pin2 to Pin1
Breakdown voltage VBR 8.5 11 14 V IR = 1 mA,
from Pin1 to Pin2
Breakdown voltage VBR 14.5 17 20 V IR = 1 mA,
from Pin2 to Pin1
Reverse current IR–<150nAVR = 3.3 V
Diode_Characteristic_Curve_bidirectional.vsd
I
PP
… P eak puls e c ur r ent ( =8/20µ s typ.)
t
P
V
CL
… Clam ping v oltage
V
RWM
… Rev er s e wor k ing v oltage max im um
V
BR
… B r eak down v oltage ( =1mA typ.)
I
BR
R
dyn
… Differ ential series r es is tance
I
I
RWM
V
RWM
R
dyn
V
CL
I
PP
I
BR
V
BR
I
RWM
V
RWM
R
dyn
V
CL
I
PP
I
BR
V
BR
V
I
V
Pin 1
Pin 2
ESD8V0R1B Series
Characteristics
Final Data Sheet 9 Revision 2.0, 2010-12-15
Table 4 RF characteris tics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Line capacitance CL–47pFVR = 0 V, f = 1 MHz,
I/O to GND
Serie inductance LS 0.4 nH ESD8V0R1B-02EL
LS 0.2 nH ESD8V0R1B-02ELS
Table 5 ESD characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Clamping voltage1)
1) According to IEC61000-4-5 (tp : 8 / 20 µs)
VCL –1722VIPP = 1 A
from Pin1 to Pin2
VCL –2328VIPP = 1 A
from Pin2 to Pin1
ESD8V0R1B Series
Characteristics
Final Data Sheet 10 Revision 2.0, 2010-12-15
3.2 Typical Performance characteristics at TA = 25 °C, unless otherwise specified
Figure 3 Non-repetitive peak pulse powe r: Ppk = f (tp)
Figure 4 Power derating curve: Ppk = f (TA)
100
101
102
103
10-8 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100
Ppk [W]
tp [s]
D=0
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150
Ppk or IPP [%]
TA [°C]
ESD8V0R1B Series
Characteristics
Final Data Sheet 11 Revision 2.0, 2010-12-15
Figure 5 Reverse characteristic, IR = (VR), TA = parameter
Figure 6 Line capacitance CL = f(VR)
10-11
10-10
10-9
10-8
0 2 4 6 8 10 12 14
IR [A]
VR [V]
TA=85°C
TA=25°C
0
1
2
3
4
5
6
7
0 2 4 6 8 10 12 14
CL [pF]
VR [V]
ESD8V0R1B Series
Application Information
Final Data Sheet 12 Revision 2.0, 2010-12-15
4 Application Information
Figure 7 1 Line, bi-directional protection with ESD diode
ESD
sensitive
device
I/O
2
1
Connector
Protected data line with signal levels
-8V up t o +14V (bi-directional)
The protection diode should be placed very
close to the location where the ESD or other
transients can occur to keep loops and
inductances as small as possible .
Pin 1 should be connected directly to a
ground plane on the board .
ESD8V0R1B Series
Ordering information scheme
Final Data Sheet 13 Revision 2.0, 2010-12-15
5 Ordering information scheme
Figure 8 Ordering Information Scheme (examples)
ESD 5V3 U-XX YY
P ackage o r App li cat ion
X X = Pin num ber ( i.e. : 02 = 2 pins; 03 = 3 pins)
Y Y = Pac k age family:
LS = TSSLP
LRH = TSLP
S = SOT 36 3
U = SC74
X X = Applic ation f am ily:
LC = Low Clam p
HDMI
Uni- / Bi-dir ec tional or Rail t o Rail protection
M aximu m wo rkin g vol t age V
RWM
in V : (i.e. : 5V3 = 5.3V)
ESD 0P1 RF -XX YY
Package XX = P in num ber (i.e.: 02 = 2 pins; 03 = 3 pins)
Y Y = Pac k age family:
LS = TSSLP
LRH = TSLP
For Radio Fr equenc y A pplic ations
Line Capacitance C
L
in pF: (i .e.: 0P1 = 0.1pF)
n U
Num ber of protected lines (i.e. : 1 = 1 line; 4 = 4 lines)
Capacitance: Standard (>10 pF), Low (< 10pF ) , Ult ra-low (<1 pF)
ESD8V0R1B Series
Package Information
Final Data Sheet 14 Revision 2.0, 2010-12-15
6 Package Information
6.1 PG-TSLP-2-18
Figure 9 PG-TSLP-2-18: Package Overview
Figure 10 PG-TSLP-2-18: Footprint
Figure 11 PG-TSLP-2-18: Packing
Figure 12 PG-TSLP-2-18: Marking (example)
TSLP-2-18-PO V01
±0.05
0.6
1
2
±0.05
0.65
±0.035
0.25
1)
1
±0.05
0.05 MAX.
+0.01
0.31-0.02
1) Dimension applies to plated terminals
Cathode marking 1)
±0.035
0.5
Bottom viewTop view
TSLP-2-18-FP V01
0.45
0.275
0.275
0.375
0.925
Copper Solder mask Stencil apertures
0.35
1
0.6
0.35
0.3
0.76
4
1.16
0.4
Cathode marking
8
TSLP-2-18-TP V01
Type code
Cathode marking
TSLP-2-18-MK V01
12
ESD8V0R1B Series
Package Information
Final Data Sheet 15 Revision 2.0, 2010-12-15
6.2 PG-TSSLP-2-2
Figure 13 PG-TSSLP-2-2: Package Overview
Figure 14 PG-TSSLP-2-2: Footprint
Figure 15 PG-TSSLP-2-2: Packing
Figure 16 PG-TSSLP-2-2: Marking (example)
0.27
0.19
0.19
0.19
Copper Solder mask Stencil apertures
0.57
0.24
0.62
0.32
0.24
0.14
TSSLP-2-1,-2-FP V02
Ex
4
Ey
0.35
Cathode
marking
8
TSSLP-2-1,-2-TP V03
Deliveries can be both tape types (no selection possible).
Specification allows identical processing (pick & place) by users.
Ex Ey
Punched Tape
Tape type
Embossed Tape
0.43 0.73
0.37 0.67
BAR95-02LS
Type code
Pin 1 marking
Laser marking
ESD8V0R1B Series
Terminology
Final Data Sheet 16 Revision 2.0, 2010-12-15
Terminology
CLLine capacitance
DSC Digital Still Camera
DVD Digital Versatile Disc
EFT Electrical Fast Transient
ESD Electrostatic Discharge
IEC International Electrotechnical Commission
IPP Peak pulse current
IRReverse current
IRWM Reverse working current maximu m
LCD Liquid Crystal Display
LSSerial inductance
MP3 Moving Picture Experts Group III
RoHS Restriction of Hazardous Substances Directive
TAAmbient temperat ure
TOP Operation temperature
tpPulse duration
Tstg Storage temper ature
VCL Reverse clamping voltage
VESD Electrostatic discharge voltage
VRReverse voltage
VRWM Reverse working voltage maximum
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