. Voss | loos | Rosin) | t, HiPerFET IXFH/FM 35N30 300V | 35A | 100m Q! 200ns IXFH 40N30 300V | 40A | 85m Q! 200ns Power MOSFETs IXFM 40N30 300V | 40A | 88mQ} 200ns N-Channel Enhancement Mode High dv/dt, Low t_, HDMOS Family 0 TO-247 AD (IXFH) G s G Symbol Test Conditions Maximum Ratings s Viss T, = 25C to 150C 300 Vv Vier T, = 25C to 150C; Res =1MQ 300 V TO-247 SMD Ves Continuous +20 Vv ("S" Suffix) (Note 1) Vosm Transient +30 Vv los T, = 25C 35N30 35 A 40N30 40 A dom T, = 25C, pulse width limited by T,,, 35N30 140 A 40N30 160 A TO-204 AE (IXFM lan T, = 25C 35N30 35 A ( ) 40N30 40 A Eun T, = 25C 30 mJ dv/dt I, Slay, di/dt < 100 Avus, V,, < Voss, 5 Vins T,s 150C, R, =2 Q G = Gate D = Drain P, T, = 25C 300 Ww S = Source TAB = Drain T, -65 ... +150 C Tos 150 C Feat eatures Tig 88 .-- +150 Cc , International standard packages M, Mounting torque 1.13/10 Nmilb.in. * Low Ros (,,, HDMOS process - * Rugged polysilicon gate cell structure Weight TO-204 = 18 g, TO-247=6g + Unclamped Inductive Switching (UIS) ; ; 5 rated weximum lead semperatire for soldering 300 Cc + Low package inductance .6 mm (0.062 in.) from case for 10 s - easy to drive and to protect Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values Applications (T, = 25C, unless otherwise specified) DC-DC converters Synchronous rectification Min. | Typ.| Max. * Battery chargers Vv V.. = OV, 1 = 250 nA 300 vy __* ~Switched-mode and resonant-mode pss ss p power supplies Vesetn) Vos = Ves: |p = 4 MA 2 4 v DC choppers * AC motor control = = + loss Ves = 420 Voc Vos = 0 +100 nA * Temperature and lighting controls loss Vos = 0.8 Voss T, = 25C 200 UA Low voltage relays Veg = OV T, = 126C 1 mA Advantages R = = 0. . . DS(on) Ves = 10V, 1, = 0.5 loos er aoNso 5 bes * Easy to mount with 1 screw (TO-247) EM40N30 0.088 QO (isolated mounting screw hole) Pulse test, t < 300 us, duty cycle 8 < 2 % * Space savings = Us, duly cy =F * High power density 1995 IXYS Corporation. All rights reserved. 91523E (10/95) IXS Corporation IXYS Semiconductor 3540 Bassett Street, Santa Clara,CA 95054 Edisonstr. 15, D-68623 Lampertheim, Germany Tel: 408-982-0700 Fax: 408-496-0670 Tel: +49-6206-5030 Fax: +49-6206-503629 f MS 4L4be22b 00033590 LTy /Symbol Test Conditions Characteristic Values (T, = 25C, unless otherwise specified) Min. | Typ. | Max. oi. Vog = 10V;1,= 0.5 1,,., pulse test 22 25 S C,,. 4800 pF C... Veg = OV, Vag = 25 V, f= 1 MHz 745 pF Ce 280 pF tecom 20 30 ns t, Veg = 10 V, V,, = 0.5 Vp .5, 1, = 0.5 1. 60 90 ns tarot R, = 2 Q (External) 75 | 100 ns t, 45 90 ns Qyron) 177 | 200 nC Q,, Veg = 10 V, Vig = 0.5 Vics I = 0.5 Io 28 50 =onc Q,, 78) 105 nc Rie 0.42 KAW Runck 0.25 K/W Source-Drain Diode Characteristic Values (T, = 25C, unless otherwise specified) Symbol Test Conditions Min. | Typ. | Max. l, Veg =O 35N30 35 A 40N30 40 A lou Repetitive; 35N30 140 A pulse width limited by T,, 40N30 160 A Vsp I, = ley Veg = OV, 1.5 V Pulse test, t < 300 js, duty cycle < 2% t, |. =1,, -d/dt = 100 Afis, T,= 25C 200 ns V, = 100 V T, = 125C 350 ns Note 1: Add "S" suffix for TO-247 SMD package option (EX: IXFH40N30S) TO-247 SMD Outline NOTE: All metol surfaces solder piloted. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Fax: 408-496-0670 4b&be2b 0003391 530 mm Tel: 408-982-0700 TO-247 AD (IXFH) Outline A amr) As FE c bl Terminals: 1 Gate b 2 - Oran 3 Source Tob Orain b2 L. SYM TO-204AE (IXFM) Outline fe #D 7 4 i ot U1. A i ac t L R1 p PINS 1, GATE 2. SOURCE CASE ~ DRAN SYM Min. Recommended Footprint Dimensions in inches and mm) bo, o14 (3.55) | CT 0.125 (3.18) i 0.678 (17.5 ! T 8 1B 0.215 (6.45)-| IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629Fig.1. Output Characteristics =10V 8 ov 7V 6v ld Amperes 0 2 4 6 8 10 12 #14 Vds Volts Fig. 3. Rds(on) vs. Drain Current 2.0 m 1.86 Tq28 o N = 1.6 E 5 (1.4 z 1 1.2 |= 1.0 2 S 0.8 ao 0.6 0 20 40 660 B0 100 120 Id Amperes Fig. 5. Drain Current vs. Coase Temperature 50 1 C t E 40N30 40 Eto s C 35N30 IN o 30 NM ef SQ | 20 ~ F N 2 Cr 10 6 o Guu Sart titaepetiprr tr trp pteti tar Pepi tizidr -50-25 0 25 5G 75 100 125 150 Tease Degrees C IXYS reserves the right to change limits, test conditions, and dimensions. Rds(on) - Normalized Fig. 2. Input Admittance Id Amperes o 1 2 3 4 5 6 7 8 9 10 Vgs Volts Fig. 4. Temperature Dependence of Drain to Source Resistance 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50-25 0 25 50 75 106 125 150 Tj Degrees C Fig. 6. Temperature Dependence of Breakdown Voltage and Threshold Voltage 1.2 FO ' Se] 1.1 E Vast BV 5s 0 hE : a N E = cE PS ea E 1.0 E eS Cc CC NS 8 095 | tC 0.8 5 E of ~ S 0.7 F > E m O.6F 0.5 Fai List ror ttiiey List pitt putt Loti -50-25 0 25 50 75 100 125 150 Tj - Degrees C IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 BH YLabecb 00033492 ee IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 "7 y wee aaa a aFig. 7. Gate Charge Fig. &. Forward Bias Safe Operating Area c T l id C rt = 1 Ous C Vds= 150V AL 100 - Limited by Rds ptt i a E id= 21A E rae A L ig=10mA fo E by L NA : to C Ba SS nN 2 c L wk oe 100Qus o OB & & a NO : N\ > r Aeridendepve thea re m. fo < 40f Sees 4 | F Ni ~ oa F E AN my > f 2 iz SN AY 20 L XY { homs Ly N 400ms a Lib d a DLit Jott Liii dist i biil 1 QO 25 50 75 100 125 150 175 200 1 10 100 300 Gate Charge nCoulombs Vds Volts Fla. 9. it C Fig. 10. Source Current vs. . 9. Capacitance rves . "9 P 4 Source to Drain Voltage BD 4500 Ciss 4000 70 & 3500 n 69 | 3000 = 50 QO a & 2500 40 Go < = 2000 C) o 1 30 Tj=125C & 1500 z o 2 1000 20 ; Tj=25C 500 10 ; 0 0 0 5 10 15 20 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Vds Volts Vsd Volts 0 Fig. 11. Transient Thermal Impedance 10 = N aa | Y 0 c oO a Ww vo fa 3 la rbtir = E ~ Single Pulse 7 = Cone Tyran Hane cot ey dD, = Duty Cycle [ - -f- 2 P i 10? pe po i bea iil poo po al po 10-5 1a-* 10-3 107-7 1077 10 10! Time Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tal: 498-989-0700 = Fax: 408-498-0670 BZ 4b4beeb 00033593 3035 IXS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 $ A 0 ea