M25P16-VMW6G - Numonyx - Datasheet.Directory

April 2010 Rev 20 1/59

Numonyx® Forté™ Serial Flash Memory

M25P16

16 Mbit, serial Flash memory, 75 MHz SPI bus interface

Features

16 Mbit of Flas h me m or y

Page Program (up to 256 bytes) in 0.64 ms

(typical)

Sector Erase (512 Kbit) in 0.6 s (typical)

Bulk Erase (16 Mbit) in 13 s (typical)

2.7 V to 3.6 V single supply voltage

SPI bus compatible serial interface

75 MHz Clock rate (maximum)

Deep Power-down mode 1 µA (typical)

Electronic signatures

– JEDEC standard two- byte signature

(2015h)

– Unique ID code (UID) with 16 bytes read-

only, available upon customer request

– RES instruction, one-byte, signature (14h ),

for backward compatibility

More than 100,000 Erase/Program cycles per

sector

Hardware Write Protection: protected area size

defined by three non-volatile bits (BP0, BP1

and BP2)

More than 20 year data retention

Packages

– RoHS compliant

Automotive Certified Parts Available

VDFPN8 (ME)

8 x 6 mm (MLP8)

SO16 (MF)

300 mils width

VFDFPN8 (MP)

6 × 5 mm (MLP8)

SO8N (MN)

150 mils width SO8W (MW)

208 mils width

PDIP8 (BA)

300 mils width



UFDFPN8 (MC)

(MLP8 4 x 3 mm)

www.numonyx.com

Contents M25P16
2/59   
Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
1 Serial Data output (Q)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
2 Serial Data input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
3 Serial Clock (C)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
4 Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
5 Hold (HOLD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
6 Write Protect (W)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
7 VCC supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  9
8 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  9
SPI modes  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Operating features   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
1 Page programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
2 Sector Erase and Bulk Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
3 Polling during a Write, Program or Erase cycle  . . . . . . . . . . . . . . . . . . . .  12
4 Active Power, Standby Power and Deep Power-down modes . . . . . . . . .  12
5 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
6 Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
7 Hold condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
Memory organization  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Instructions  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
1 Write Enable (WREN)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
2 Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
3 Read Identification (RDID)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20
4 Read Status Register (RDSR)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  21
4.1 WIP bit  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.2 WEL bit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.3 BP2, BP1, BP0 bits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

M25P16 Contents
 3/59
4.4 SRWD bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5 Write Status Register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  23
6 Read Data Bytes (READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  25
7 Read Data Bytes at Higher Speed (FAST_READ) . . . . . . . . . . . . . . . . . .  26
8 Page Program (PP)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  27
9 Sector Erase (SE)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  29
10 Bulk Erase (BE)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  30
11 Deep Power-down (DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  31
12 Release from Deep Power-down and Read Electronic Signature (RES) .  32
Power-up and power-down   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
DC and AC parameters  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Ordering Information, Standard Parts . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Ordering Information, Automotive Parts . . . . . . . . . . . . . . . . . . . . . . . . 55
Revision history   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

List of tables M25P16
4/59   
List of tables
Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 2. Protected area sizes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 3. Memory organization  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 4. Instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 5. Read Identification (RDID) data-out sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 6. Status Register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 7. Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 8. Power-up timing and VWI threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 9. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 10. Operating conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 11. Data retention and endurance  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 12. AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 13. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 14. DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 15. AC characteristics (110 nm technology). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 16. AC characteristics (25 MHz operation). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 17. VFQFPN8 (MLP8) 8-lead very thin fine pitch quad flat package no lead,
6 × 5 mm, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 18. VDFPN8 (MLP8) 8-lead very thin dual flat package no lead, 8 × 6 mm,
package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 19. SO8N – 8 lead plastic small outline, 150 mils body width, package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 20. SO8 wide – 8 lead plastic small outline, 208 mils body width,
package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 21. SO16 wide – 16-lead plastic small outline, 300 mils body width, mechanical data  . . . . . . 49
Table 22. PDIP8 – 8 lead Plastic Small Outline, 300 mils body width, package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 23. UFDFPN (MLP8) 8-lead ultra thin fine pitch dual flat package no lead , 4X3 mm package me-
chanical data52
Table 24. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 25. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Table 26. Document revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

M25P16 List of figures
 5/59
List of figures
Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 2. SO8, VFQFPN, VDFPN, and PDIP8 connections  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 3. SO16 connections  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. Bus master and memory devices on the SPI bus. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 6. Hold condition activation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 7. Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 8. Write Enable (WREN) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 9. Write Disable (WRDI) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 10. Read Identification (RDID) instruction sequence and data-out sequence . . . . . . . . . . . . . 20
Figure 11. Read Status Register (RDSR) instruction sequence and data-out sequence . . . . . . . . . . 22
Figure 12. Write Status Register (WRSR) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 13. Read Data Bytes (READ) instruction sequence and data-out sequence . . . . . . . . . . . . . . 25
Figure 14. Read Data Bytes at Higher Speed (FAST_READ) instruction sequence
and data-out sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 15. Page Program (PP) instruction sequence  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 16. Sector Erase (SE) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 17. Bulk Erase (BE) instruction sequence  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 18. Deep Power-down (DP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 19. Release from Deep Power-down and Read Electronic Signature (RES) instruction
sequence and data-out sequence  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 20. Release from Deep Power-down (RES) instruction sequence. . . . . . . . . . . . . . . . . . . . . . 33
Figure 21. Power-up timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 22. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 23. Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 24. Write Protect setup an d ho ld  timing  du rin g WR SR when SRWD = 1. . . . . . . . . . . . . . . . . 42
Figure 25. Hold timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 26. Output timing  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 27. VFQFPN8 (MLP8) 8-lead very thin fine pitch quad flat pa ckage no lead,
6 × 5 mm, package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 28. VDFPN8 (MLP8) 8-lead very thin dual flat package no lead, 8 × 6 mm,
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 29. SO8N – 8 lead plastic small outline, 150 mils body width, package outline . . . . . . . . . . . . 47
Figure 30. SO8W – 8 lead plastic small outline, 208 mils body width, package outline. . . . . . . . . . . . 48
Figure 31. SO16 wide – 16-lead plastic small outline, 300 mils body width, package outline . . . . . . . 49
Figure 32. PDIP8 – 8 lead Plastic Small Outline, 300 mils body width, package outline. . . . . . . . . . . 50
Figure 33. UFDFPN (MLP8) 8-lead ultra thin fine pitch dual flat package no lead, 4X3 mm package me-
chanical data51

Description M25P16

6/59

1 Description

The M25P16 is a 16 Mbit (2 Mbit × 8) serial Flash memory, with advanced write protection

mechanisms, accessed by a high speed SPI-compatible bus.

The memory can be programmed 1 to 256 bytes at a time, using the Page Prog ram

instruction.

The memory is organized as 32 sectors, each containing 256 pages. Each page is 256

bytes wide. Thus, the whole memory can be viewed as consisting of 8192 pages, or 2 097

152 bytes.

The whole memory can be erased using the Bulk Erase instruction, or a sector at a time,

using the Sector Erase instruction.

Figure 1. Logic diagram

Table 1. Signal names

Signal name Function Direction

C Serial Clock Input

D Serial Data input Input

Q Serial Data output Output

SChip Select Input

WWrite Protect Input

HOLD Hold Input

VCC Supply voltage

VSS Ground

AI05762

VCC

M25P16

HOLD

VSS

M25P16 Description

7/59

Figure 2. SO8, VFQFPN, VDFPN, and PDIP8 connections

1. There is an exposed central pad on the underside of the VFQFPN package. This is pulled, internally, to

VSS, and must not be allowed to be connected to any other voltage or signal line on the PCB.

2. See Package mechanical section for package dimensions, and how to identify pin-1.

Figure 3. SO16 connections

1. DU = Don’t use

2. See Package mechanical section for package dimensions, and how to identify pin-1.

AI08517

5DVSS C

HOLDQ

M25P16

AI08594B

DU DU

VCC

HOLD

DUDU

M25P16

9WQ VSS

Signal description M25P16

8/59

2 Signal description

2.1 Serial Data output (Q)

This output signal is u sed to transfer dat a serially out of the device . Data is shif ted out on the

falling edge of Serial Clock (C).

2.2 Serial Data input (D)

This input signal is used to transfer data serially into th e device. It receives instructions,

addresses, and the data to be programmed. Values are latched on the rising edge of Serial

Clock (C).

2.3 Serial Clock (C)

This input signal provides the timing of the serial interface. Instructions, addresses, or data

present at Serial Data input (D) are latched on the rising edge of Serial Clock (C). Data on

Serial Data output (Q) changes after the falling edge of Serial Clock (C).

2.4 Chip Select (S)

When this input signal is High, the device is deselected and Serial Data output (Q) is at high

impedance. Unless an intern al Program, Erase or Write Status Register cycle is in pr ogress,

the device will be in the Standby mode (this is not the Deep Power-down mode). Driving

Chip Select (S) Low selects the device, placing it in the Active Power mode.

After power-up, a falling edge on Chip Select (S) is required prior to the star t of any

instruction.

2.5 Hold (HOLD)

The Hold (HOLD) signal is used to p ause any serial communica tions with the device without

deselecting the device.

During the Hold condition, the Serial Data output (Q) is high impedance, and Serial Data

input (D) and Serial Clock (C) are Don’t care.

To start the Hold condition, the device must be selected, with Chip Select (S) driven Low.

2.6 Write Protect (W)

The main purpose of this input signal is to freeze the size of the area of memory that is

protected against program or erase in structio ns (as specified by the values in the BP2, BP1

and BP0 bits of the Status Register).

M25P16 Signal description

9/59

2.7 VCC supply voltage

VCC is the supply voltage.

2.8 VSS ground

VSS is the reference for the VCC supply voltage.

SPI modes M25P16

10/59

3 SPI modes

These devices can be driven by a microcontroller with its SPI peripheral running in either of

the two following modes:

CPOL=0, CPHA=0

CPOL=1, CPHA=1

For these two modes, input data is latched in on the rising edge of Serial Clock (C), and

output data is available from the falling edge of Serial Clock (C).

The dif ference b etween the two modes, as shown in Figure 5, is the clock polarity when the

bus master is in Standby mode and not tran sfe rr ing da ta:

C remains at 0 for (CPOL=0, CPHA=0)

C remains at 1 for (CPOL=1, CPHA=1)

Figure 4. Bus master and memory devices on the SPI bus

1. The Write Protect (W) and Hold (HOLD) signals should be driven, High or Low as appropriate.

Figure 4 shows an example of three devices connected to an MCU, on an SPI bus. Only

one device is sele cted at a time , so o nly one device drives the Serial Dat a outp ut (Q) line at

a time, the other devices are high impedance. Re sistors R (represented in Figure 4) ensure

that the M25P16 is not selected if the Bus Master leaves the S line in the high impedance

state. As the Bus Ma ster may enter a state wher e all inputs/output s are in high impedance at

the same time (for example, when the Bus Master is reset), the clock line (C) must be

connected to an external pull-down resistor so that, when all inputs/outputs become high

impedance, the S line is pulled High while the C line is pulled Low (thus ensuring that S and

C do not become High at the same time, and so, that the tSHCH requirement is met). The

typical value of R is 100 k Ω, assuming that the time constant R*Cp (Cp = parasitic

capacit a nce of the bu s line) is sho rter than th e tim e during which th e Bus Master leaves the

SPI bus in high impedance.

AI12836b

SPI Bus Master

SPI memory

device

SDO

SDI

SCK

CQD

SPI memory

device

CQD

SPI memory

device

CQD

CS3 CS2 CS1

SPI interface with

(CPOL, CPHA) =

(0, 0) or (1, 1)

WHOLD WHOLD WHOLD

RR R

VCC

VCC VCC VCC

VSS

VSS VSS VSS

M25P16 SPI modes

11/59

Example: Cp = 50 pF, that is R*Cp = 5 µs: the application must ensure that the Bus Master

never leaves the SPI bus in the high impedance state for a time period shorter than 5 µs.

Figure 5. SPI modes supported

AI01438B

MSB

CPHA

CPOL

MSB

Operating features M25P16

12/59

4 Operating features

4.1 Page programming

To program one data byte, two instructions are required: Write Enable (WREN), which is

one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This

is followed by the internal Program cycle (of duration tPP).

To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be

programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive

addresses on the same page of memory.

For optimized timings, it is recommended to use the Page Program (PP) instru ction to

program all consecutive targeted bytes in a single sequence versus using several Page

Program (PP) sequences with each containing only a few bytes (see Page Program (PP)).

4.2 Sector Erase and Bulk Erase

The Page Program (PP) instru ction allows bits to be reset from 1 to 0. Before this can be

applied, the bytes of memory need to have been erased to all 1s (FFh). This can be

achieved either a sector at a tim e, using the Sector Erase (SE) instruction, or throughout the

entire memory, using the Bulk Erase (BE) instr uc tio n. This starts an internal Erase cycle (of

duration tSE or tBE).

The Erase inst ru ctio n mus t be preceded by a Write Enable (WREN) ins tru ct ion .

4.3 Polling during a Write, Program or Erase cycle

A further improvemen t in the time to Write Status Register (WRSR), Pr og ram (PP) or Era se

(SE or BE) can be achieved by not waiting for the worst case d elay (tW, tPP, tSE, or tBE). The

Write In Progress (WIP) bit is provided in the Status Register so that the application progr am

can monitor its value, polling it to est ablish when the previous Write cycle, Program cycle or

Erase cycle is complete.

4.4 Active Power, Standby Power and Deep Power-down modes

When Chip Select (S) is Low, the device is selected, and in the Active Power mode.

When Chip Select (S) is High, the device is deselected, but could remain in the Active

Power mode until all internal cycles have completed (Program, Erase, Write Status

drops to ICC1.

The Deep Power-down mode is entered when the specific instruction (the Deep Power-

down (DP) instruction) is executed. The device consumption drops further to ICC2. The

device remains in this mode until another specific instruction (the Release from Deep

Power-down and Read Electronic Signature (RES) instruction) is executed.

While in the Deep Power-down mode, the device ignores all Write, Pro gram and Erase

instructions (see Deep Power- down (DP)). This can be used as an e xtra softwar e protection

mechanism, when the device is not in active use, to protect the device from inadvertent

Write, Program or Erase instructions.

M25P16 Operating features

13/59

4.5 Status Register

The Status Register contains a number of st atu s and contr ol bi ts that can be read or set (as

appropriate) by specific instructions. See Section 6.4: Read Status Register (RDSR) for a

detailed description of the Status Register bits.

4.6 Protection modes

The environme nts where non -vo la tile memo ry de vice s ar e us ed can be very noisy. No SPI

device can operate correctly in the presence of excessive noise. To help combat this, the

M25P16 features the following data protection mechanisms:

Power on reset and an internal timer (tPUW) can provide protection aga inst inadvertent

changes while the power supply is outside the operating specification

Program, Erase and Write S t atus Register instructions are checked that they consist of

a number of clock pulses that is a multiple of eight, before they are accepted for

execution

All instructions that modify data must be preceded by a Write Enable (WREN)

instruction to set the Write Enable Latch (WEL) bit. This b it is retur ned to its reset state

by the following events:

–Power-up

– Write Disable (WRDI) instruction completion

– Write Status Register (WRSR) instruction completion

– Page Progra m (PP) instr uc tio n co mple tion

– Sector Erase (SE) instruction completion

– Bulk Erase (BE) instruction completion

Software Protected Mode (SPM): The Block Protect bits (BP2, BP1, BP0) allow part of

the memory to be configured as read-only.

Hardware Protected Mode (HPM): The Write Protect (W) signal allows the Block

Protect bits (BP2, BP1, BP0) and the Status Register Write Disable bit (SRWD) to be

protected.

In addition to the low power consumption feature, the Deep Power-down mode offers

extra software protection, as all Write, Program and Erase instructions are ignored.

Operating features M25P16

14/59

4.7 Hold condition

The Hold (HOLD) signal is used to p ause any serial communica tions with the device without

resetting the clocking sequence. However, taking this signal Low does not terminate any

Write Status Register, Program or Erase cycle that is currently in progress.

To enter the Hold condition, the device must be selected, with Chip Select (S) Low.

The Hold condition starts on the falling edge of the Hold (HOLD) signal, provided that this

coincides with Serial Clock (C) being Low (as shown in Figure 6).

The Hold condition ends on the rising edge of the Hold (HOLD) signal, provided that this

coincides with Serial Clock (C) being Low.

If the falling edge does not coincide with Serial Clock (C) being Low, the Hold condition

starts after Serial Clock (C) next goes Low. Similarly, if the rising edge does not coincide

with Serial Clock (C) being Low, the Hold condition ends after Serial Clock (C) next goes

Low (this is shown in Figure 6: Hold condition activation).

During the Hold condition, the Serial Data output (Q) is high impedance, and Serial Data

input (D) and Serial Clock (C) are Don’t care.

Normally, the device is kept selected, with Chip Select (S) driven Low, for the whole duration

of the Hold condition. This is to ensure that the st ate of the internal logic remains unch anged

from the moment of entering the Hold condition.

If Chip Select (S) goes High while the device is in the Hold con dition, this has the effect of

resetting the internal logic of the device. To restart communication with the device, it is

necessary to drive Hold (HOLD) High, and then to drive Chip Select (S) Low. This prevents

the device from going back to the Hold condition.

Table 2. Protected area sizes

Status Register

content Memor y content

BP2

bit BP1

bit BP0

bit Protected ar ea Unprotec te d ar e a

0 0 0 none All sectors(1) (32 sectors: 0 to 31)

1. The device is ready to accept a Bulk Erase instruction only if all Block Protect bits (BP2, BP1, BP0) are 0.

0 0 1 Upper 32nd (Sector 31) Lower 31/32nds (31 sectors: 0 to 30)

0 1 0 Upper sixteenth (2 sectors: 30 and 31) Lower 15/16ths (30 sectors: 0 to 29)

0 1 1 Upper eighth (4 sectors: 28 to 31) Lower seven-eighths (28 sectors: 0 to 27)

1 0 0 Upper quarter (8 sectors: 24 to 31) Lower three-quarters (24 sectors: 0 to 23)

1 0 1 Upper half (16 sectors: 16 to 31) Lower half (16 sectors: 0 to 15)

1 1 0 All sectors (32 sectors: 0 to 31) none

1 1 1 All sectors (32 sectors: 0 to 31) none

M25P16 Operating features

15/59

Figure 6. Hold condition activation

AI02029D

HOLD

Hold

condition

(standard use)

Hold

condition

(non-standard use)

Memory organization M25P16

16/59

5 Memory organization

The memory is organized as:

2 097 152 bytes (8 bits each)

32 sectors (512 Kbits, 65536 bytes each)

8192 pages (256 bytes each) .

Each pag e can be individually programme d (bits are programme d from 1 to 0). The device is

sector or bulk erasable (bits are erased from 0 to 1) but not page erasable.

Figure 7. Block diagram

AI04987

HOLD

WControl Logic High voltage

Generator

I/O Shift Register

Address Register

and Counter 256 byte

Data Buffer

256 bytes (page size)

X Decoder

Y Decoder

Size of the

read-only

memory area

Status

00000h

1FFFFFh

000FFh

M25P16 Memory organization

17/59

Table 3. Memory organization

Sector Address range

31 1F0000h 1FFFFFh

30 1E0000h 1EFFFFh

29 1D0000h 1DFFFFh

28 1C0000h 1CFFFFh

27 1B0000h 1BFFFFh

26 1A0000h 1AFFFFh

25 190000h 19FFFFh

24 180000h 18FFFFh

23 170000h 17FFFFh

22 160000h 16FFFFh

21 150000h 15FFFFh

20 140000h 14FFFFh

19 130000h 13FFFFh

18 120000h 12FFFFh

17 110000h 11FFFFh

16 100000h 10FFFFh

15 0F0000h 0FFFFFh

14 0E0000h 0EFFFFh

13 0D0000h 0DFFFFh

12 0C0000h 0CFFFFh

11 0B0000h 0BFFFFh

10 0A0000h 0AFFFFh

9 090000h 09FFFFh

8 080000h 08FFFFh

7 070000h 07FFFFh

6 060000h 06FFFFh

5 050000h 05FFFFh

4 040000h 04FFFFh

3 030000h 03FFFFh

2 020000h 02FFFFh

1 010000h 01FFFFh

0 000000h 00FFFFh

Instructions M25P16

18/59

6 Instructions

All instructions, addresses and data are shifted in and out of the device, most significant bit

first. Serial Data input (D) is sampled on the first rising edge of Serial Clock (C) after Chip

Select (S) is driven Low. Then, the one-byte instruction code must be shifted in to the

device, most significant bit first, on Serial Data input (D), each bit being la tched on the rising

edges of Serial Clock (C). The instruction set is listed in Table 4: Instruct ion set.

Every instruction sequence starts with a one-byte instruction code. Depending on the

instruction, this might be followed by address bytes, or by data bytes, or by both or none.

In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed

(FAST_READ), Read Statu s Register (RDSR), Read Identification (RDID) or Release from

Deep Power-down , and Re ad Electr o nic Sig nature (RES) instruction, the shifted-in

instruction sequence is followed by a dat a-out sequence. Chip Sele ct (S) can be driven High

after any bit of the data-out sequence is being shifted out.

For a Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Status Register

(WRSR), Write Enable (WREN), Write Disable (WRDI), or Deep Power-down (DP)

instruction, Chip Select (S) must be driven High exactly at a byte boundary. Otherwise the

instruction is rejected and not executed. That is, Chip Select (S) must driven High when the

number of clock pulses after Chip Select (S ) being driven Low is an exact multiple of eight.

All attempts to access the memory array during a Write Status Register cycle, Program

cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program

cycle or Erase cycle continues unaffected.

Note: Output Hi-Z is defined as the point where data out is no longer driven.

Table 4. Instruction set

Instruction Description One-byte instruction

code Address

bytes Dummy

bytes Data

bytes

WREN Write Enable 0000 0110 06h 0 0 0

WRDI Write Disable 0000 0100 04h 0 0 0

RDID Read Identification 1001 1111 9Fh 0 0 1 to 20

RDSR Read Status Register 0000 0101 05h 0 0 1 to ∞

WRSR Write Status Register 0000 0001 01h 0 0 1

READ Read Data Bytes 0000 0011 03h 3 0 1 to ∞

FAST_READ Read Data Bytes at Higher Speed 0000 1011 0Bh 3 1 1 to ∞

PP Page Program 0000 0010 02h 3 0 1 to 256

SE Sector Erase 1101 1000 D8h 3 0 0

BE Bulk Erase 1100 0111 C7h 0 0 0

DP Deep Power-down 1011 1001 B9h 0 0 0

RES Release from Deep Power-down,

and Read Electronic Signature 1010 1011 ABh 0 3 1 to ∞

Release from Deep Power-down 0 0 0

M25P16 Instructions

19/59

6.1 Write Enable (WREN)

The Write Enable (WREN) instruction (Figure 8) sets the Write Enable Latch (WEL) bit.

The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector

Erase (SE), Bulk Erase (BE) and Write Status Register (WRSR) instruction.

The Write Enable (WREN) instruction i s entered by driving Chip Select (S) Low , sending the

instruction code, and then driving Chip Select (S) High.

Figure 8. Write Enable (WREN) instruction sequence

6.2 Write Disable (WRDI)

The Write Disable (WRDI) instruction (Figure 9) resets the Write Enable Latch (WEL) bit.

The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the

instruction code, and then driving Chip Select (S) High.

The Write Enable Latch (WEL) bit is reset under the following conditions:

Power-up

Write Disable (WRDI) instruction completion

Write Status Register (WRSR) instruction completion

Page Program (PP) instruction completion

Sector Erase (SE) instruction completion

Bulk Erase (BE) instruction completion

Figure 9. Write Disable (WRDI) instruction sequence

AI02281E

21 34567

High Impedance

Instruction

AI03750D

21 34567

High Impedance

Instruction

Instructions M25P16

20/59

6.3 Read Identification (RDID)

The Read Identification (RDID) instruction allows to read the device identification data:

Manufacturer identification (1 byte)

Device identification (2 bytes)

A Unique ID code (UID) (17 bytes, of which 16 available upon customer request).

The manufacture r identification is assigned b y JEDEC, and has the value 20h for Numonyx.

The device identification is assigned by the device man ufacturer, and indicates the memory

type in the first byte (20h), and the memory capacity of the device in the second byte (15h).

The UID contains the length of the following data in the first byte (set to 10h), and 16 bytes

of the optional Customized Factory Data (CFD) content. The CFD bytes are read-only and

can be programmed with customers data upon their request. If the customers do not make

requests , the devices are shipped with all the CFD bytes programmed to zero (00h).

Note: See Section 12: Ordering Information, Standar d Parts on page 53 for CFD programmed

devices.

Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is

not decoded, and has no effect on the cycle that is in progress.

The device is first selected by driving Chip Select (S) Low. Then, the 8-bit instruction code

for the instruction is shifted in. After this, the 24-bit device identification, stored in the

memory, the 8-bit CFD length followed by 16 bytes of CFD content will be shifted out on

Serial Data output (Q). Each bit is shifted out during the falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 10: Read Identification (RDID) instruction

sequence and data-out sequence. The Read Identification (RDID) instruction is terminated

by driving Chip Select (S) High at any time during data output.

When Chip Select (S) is driven High, the device is put in the Standby Power mode. Once in

the S tan dby Power mode, the device waits to be selected, so that it can receive , decode and

execute instructions.

Figure 10. Read Identification (RDID) instruction sequence and data-out sequence

Table 5. Read Identification (RDID) data-out sequence

Manufacturer

identification

Device identification UID

Memory type Memory capacity CFD length CFD content

20h 20h 15h 10h 16 bytes

213456789101112131415

Instruction

AI06809c

Manufacturer identification

High Impedance

MSB

Device identification

MSB

15 14 13 3 2 1 0

16 17 18 28 29 30 31

MSB

UID

M25P16 Instructions

21/59

6.4 Read Status Register (RDSR)

The Read Status Register (RDSR) instruction allows the Status Register to be read. The

Status Register may be read at any time, even while a Program, Erase or Write Status

check the Write In Progress (WIP) bit before sending a new instruction to the device. It is

also possible to read th e Status Register continuou sly, as shown in Figure 11.

The status and control bits of the Status Register are as follows:

6.4.1 WIP bit

The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status

‘0’ no such cycle is in progress.

6.4.2 WEL bit

The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.

When set to ‘1’ the internal Write Enable Latch is set, when set to ‘0’ the internal Write

Enable Latch is reset and no Write Status Register, Program or Erase instruction is

accepted.

6.4.3 BP2, BP1, BP0 bits

The Block Protect (BP2, BP1, BP0) bits are non-volatile. The y defin e the size of the ar ea to

be software protected against Program and Erase instructions. These bits are written with

the Write Status Register (WRSR) instruction. When one or more of the Block Protect (BP2,

BP1, BP0) bits is set to ‘1’, the relevant memory area (as defined in Table 2) becomes

protected against Page Program (PP) and Sector Erase (SE) instructions. The Block Protect

(BP2, BP1, BP0) bits can be written provided that the Hardwa re Protected mode has not

been set. The Bulk Erase (BE) instruction is executed if, and only if, all Block Protect (BP2,

BP1, BP0) bits are 0.

Table 6. Status Register format

b7 b0

SRWD 0 0 BP2 BP1 BP0 WEL WIP

Status Register Write Protect

Block Protect bits

Wr ite Enable Latch bit

Write In Progress bit

Instructions M25P16

22/59

6.4.4 SRWD bit

The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write

Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect (W)

signal allow the device to be put in the Hardware Protected mode (when the Status Register

Write Disable (SRWD) bit is set to ‘1’, and Write Protect (W) is driven Low). In this mode, the

non-volatile bits of the Status Register (SRWD, BP2, BP1, BP0) become read-only bits and

the Write Status Register (WRSR) instruction is no longer accepted for execution.

Figure 11. Read Status Register (RDSR) instruction sequence and data-out

sequence

21 3456789101112131415

Instruction

AI02031E

Q76543210

Status Register Out

High Impedance

MSB

76543210

Status Register Out

MSB

M25P16 Instructions

23/59

6.5 Write Status Register (WRSR)

The Write Status Register (WRSR) instruction allows new values to be written to the Status

have been executed. After the Write Enable (WREN) instruction has been decoded and

executed, the device sets the Write Enable Latch (WEL).

The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) Low,

followed by the instruction code and the data byte on Serial Data input (D).

The instruction sequence is shown in Figure 12.

The Write Status Register (WRSR) instruction has no effect on b6, b5, b1 and b0 of the

Status Register. b6 and b5 are always read as 0.

Chip Select (S) must be driven High after the eighth bi t of the dat a byte has been latched in.

If not, the Write S tatus Register (WRSR) instruction is not executed. As soon as Chip Select

(S) is driven High, the self-timed Wr ite Status Register cycle (whose duration is tW) is

initiated. While the Write Status Register cycle is in progress, the Status Register may still

be read to check the value of the Write In Progress (WIP) bit. The Write In Prog re ss (WIP)

bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed.

When the cycle is completed, the Write Enable Latch (WEL) is reset.

The Write Status Register (WRSR) instruction allows the user to change the values of the

Block Protect (BP2, BP1, BP0) bits, to define the size of the area that is to be treated as

read-only, as defined in Table 2. The Write Status Register (WRSR) instruction also allows

the user to set or reset the St atus Register Write Disable (SRWD) bit in accordance with the

Write Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect

(W) signal allow the device to be put in the Hardware Protected mode (HPM). The Write

Status Register (WRSR) instruction is not executed once the Hardware Protected mode

(HPM) is entered.

Figure 12. Write Status Register (WRSR) instruction sequence

AI02282D

21 3456789101112131415

High Impedance

Instruction Status

765432 0

MSB

Instructions M25P16

24/59

The protection features of the de vice are summarized in Table 7.

When the Status Register Write Disable (SRWD) bit of the Status Register is 0 (its initial

delivery state), it is possible to write to the Status Register provided that the Write Enable

Latch (WEL) bit has previo usly been set by a Write Enable (WREN) instruction, regardless

of the whether Write Protect ( W) is driven High or Low.

When the Status Register Write Disable (SRWD) bit of the Status Register is set to ‘1’, two

cases need to be considered, depending on the state of Write Protect (W):

If Write Protect (W) is driven High, it is possible to write to the Status Register provided

that the Write Enable Latch (WEL) bit has previously been set by a Write Enable

(WREN) instruction

If Write Protect (W) is driven Low, it is not possible to writ e to the Stat us Regis te r eve n

if the Write Ena ble Latch (WEL) bit has prev iously been set by a W rite Enable (WREN)

instruction (attempts to write to the Status Register are rejected, and are not accepted

for execution). As a consequence, all the data bytes in the me mory area that are

software protected (SPM ) by the Bloc k Pro tec t (BP2, BP1, BP0 ) bits of the Status

Regardless of the order of the two events, the Hardware Protected mode (HPM) can be

entered:

by setting the Status Register Write Disable (SRWD) bit after driving Write Protect (W)

Low

or by driving Write Protect (W) Low after setting the Status Register Write Disable

(SRWD) bit.

The only way to exit the Hardware Protected mode (HPM) once entered is to pull Write

Protect (W) High.

If Write Protect (W) is permanently tied High, the Hardware Protected mode (HPM) can

never be activated, and only the Software Protected mode (SPM), using the Block Protect

(BP2, BP1, BP0) bits of the Status Register, can be used.

Table 7. Protection modes

signal SRWD

bit Mode Write Protection of the

Status Register

Memory content

Protected area(1)

1. As defined by the values in the Block Protect (BP2, BP1, BP0) bits of the Status Register, as shown in

Table 6.

Unprotected area(1)

Software

Protected

mode

(SPM)

Status Register is writable

(if the WREN instruction

has set the WEL bit)

The values in the SRWD,

BP2, BP1 and BP0 bits

can be changed

Protected against

Page Program,

Sector Erase and

Bulk Erase

Ready to accept

Page Program and

Sector Erase

instructions

Hardwar

Protected

mode

(HPM)

Status Register is

Hardware write protected

The values in the SRWD,

BP2, BP1 and BP0 bits

cannot be changed

Protected against

Page Program,

Sector Erase and

Bulk Erase

Ready to accept

Page Program and

Sector Erase

instructions

M25P16 Instructions

25/59

6.6 Read Data Bytes (READ)

The device is first selected by driving Chip Select (S) Low. The instruction code for the Read

Data Bytes (READ) instruction is followed by a 3-byte addres s (A23-A0), each bit being

latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that

address, is shifted out on Serial Data output (Q), each bi t being shifted out, at a maximum

frequency fR, during the falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 13.

The first byte addressed can be at any location. The address is automatically incremented

to the next higher address after each byte of data is shifted out. The whole memory can,

therefore, be read with a single Read Data Bytes (READ) instruction. When the highest

address is reached, the address counter r olls over to 000000h, allowing the read sequence

to be continued indefinitely.

The Read Data Bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip

Select (S) can be driven High at any time during dat a output. Any Read Data Bytes (READ)

instruction, while an Erase, Program or Write cycle is in progress, is rejecte d without havi ng

any effects on the cycle that is in progress.

Figure 13. Read Data Bytes (READ) instruction sequence and data-out sequence

1. Address bits A23 to A21 are Don’t care.

AI03748D

21 345678910 2829303132333435

2221 3210

36 37 38

76543 1 7

High Impedance Data Out 1

Instruction 24-bit address

MSB

Data Out 2

Instructions M25P16

26/59

6.7 Read Data Bytes at Higher Speed (FAST_READ)

The device is first selected by driving Chip Select (S) Low. The instruction code for the Read

Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-

A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).

Then the memory content s, at that address, is shif ted out on Serial Data output (Q), each bit

being shifted out, at a maximum frequency fC, during the falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 14.

The first byte addressed can be at any location. The address is automatically incremented

to the next higher address after each byte of data is shifted out. The whole memory can,

therefore, be read wi th a single Read Data Bytes at Higher Speed (FAST_READ)

instruction. When the highest address is reached, the address counter rolls over to

000000h, allowing the read sequence to be continued indefinitely.

The Read Dat a Bytes at Higher Speed (FAST_READ) instruction is terminated by driving

Chip Select (S) High. Chip Select (S) can be driven High at any time d uring dat a output. Any

Read Data Bytes at Highe r Speed (FAST_READ) instruction, while an Erase, Program or

Write cycle is in progress, is rejected without having any effects on the cycle that is in

progress.

Figure 14. Read Data Bytes at Higher Speed (FAST_READ) instruction sequence

and data-out sequence

1. Address bits A23 to A21 are Don’t care.

AI04006

21 345678910 28293031

2221 3210

High Impedance

Instruction 24-bit address

32 33 34 36 37 38 39 40 41 42 43 44 45 46

765432 0

DATA OUT 1

Dummy byte

MSB

76543210

DATA OUT 2

MSB MSB

765432 0

M25P16 Instructions

27/59

6.8 Page Program (PP)

The Page Program (PP) instruction allows bytes to be programmed in the me mory

(changing bits from 1 to 0). Befo re it can be acce p ted , a Write Enable (WREN) instruction

must previously have been executed. After the Write Enable (WREN) instruction has been

decoded, the device sets the Write Enable Latch (WEL).

The Page Program (PP) instruction is entered by driving Chip Select (S) Low, followed by

the instruction code, three ad dress bytes and at least one dat a byte on Serial Data input (D).

If the 8 least significant ad dr ess bits (A7-A0) are not all zero, all transm itt ed data that goes

beyond the end of the current page are programmed from the start address of the same

page (from the ad dress whose 8 least significant bits (A7-A0) are all zero). Chip Select (S)

must be driven Low for the entire duration of the sequence.

The instruction sequence is shown in Figure 15.

If more than 25 6 bytes are sent to the device, previo usly latched dat a are d iscarded and the

last 256 dat a bytes are guaranteed to be programmed correctly within the same page. If less

than 256 data bytes are sent to device, they are correctly programmed at the requested

addresses without having any effects on the other bytes of the same page.

For optimized timings, it is recommended to use the Page Program (PP) instru ction to

program all consecutive targeted bytes in a single sequence versus using several Page

Program (PP) sequences with each containing only a few bytes.

Chip Select (S) must be driven High after the eighth bit of the last data byte has be en

latched in, otherwise the Page Program (PP) instruction is not executed.

As soon as Chip Select (S) is driven High, the self-timed Page Program cycle (whose

duration is tPP) is initiated. While the Page Progr am cycle is in progress, the S tatus Register

may be read to check the value of the Write In Progress (WIP) bit. Th e Write In Progre ss

(WIP) bit is 1 during the self -t im e d Pa ge Prog ra m cycle, and is 0 when it is completed. At

some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is

reset.

A Page Program (PP) instruction applied to a page which is protected by the Block Protect

(BP2, BP1, BP0) bits (see Table 2 and Table 3) is not executed.

Instructions M25P16

28/59

Figure 15. Page Program (PP) instruction sequence

1. Address bits A23 to A21 are Don’t care.

AI04082B

4241 43 44 45 46 47 48 49 50 52 53 54 5540

21 345678910 2829303132333435

2221 3210

36 37 38

Instruction 24-bit address

765432 0

Data byte 1

765432 0

Data byte 2

765432 0

Data byte 3 Data byte 256

2079

2078

2077

2076

2075

2074

2073

765432 0

2072

MSB MSB

MSB MSB MSB

M25P16 Instructions

29/59

6.9 Sector Erase (SE)

The Sector Erase (SE) instru ction set s to ‘1’ (FFh) all b its in side the chosen sector. Before it

can be accepted, a Write Enable (WREN) instruction must previously have been executed.

After the Write Enable (WREN) instruction has been decoded, the device sets the Write

Enable Latch (WEL).

The Sector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the

instruction code, and three address bytes on Serial Data input (D). Any address inside the

sector (see Table 3) is a valid address for the Sector Er ase (SE) instruction. Chip Select (S)

must be driven Low for the entire duration of the sequence.

The instruction sequence is shown in Figure 16.

Chip Select (S) must be driven High after the eighth bit of the last addre ss by te ha s be en

latched in, otherwise the Sector Erase (SE) instruction is not executed. As soon as Chip

Select (S) is driven High, the self-timed Sector Erase cycle (whose duration is tSE) is

initiated. While the Sector Erase cycle is in progress, the Status Register may be read to

check the value of the Write In Progr ess (WIP) bit. The Write In Progress (WIP) bit is 1

during the self-timed Sector Erase cycle , and is 0 when it is completed. At some unspecified

time before the cycle is completed, the W rite Enable Latch (WEL) bit is reset.

A Sector Erase (SE) instruction applied to a page which is protected by the Block Protect

(BP2, BP1, BP0) bits (see Table 2 and Table 3) is not executed.

Figure 16. Sector Erase (SE) instruction sequence

1. Address bits A23 to A21 are Don’t care.

24 Bit Address

AI03751D

21 3456789 293031

Instruction

23 22 2 0

MSB

Instructions M25P16

30/59

6.10 Bulk Erase (BE)

The Bulk Erase (BE) instruction sets all bits to ‘1’ (FFh). Before it can be accepted, a Write

Enable (WREN) instruction must previously have been executed. After the Write Enable

(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).

The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the

instruction code on Serial Da ta input (D). Chip Select (S) must be driven Low for the entire

duration of the sequence.

The instruction sequence is shown in Figure 17.

Chip Select (S) must be driven High after the eighth bit of the instruction code has been

latched in, otherwise the Bulk Erase instructio n is not executed. As soon as Chip Select (S)

is driven High, the self-timed Bulk Erase cycle (whose duration is tBE) is initiated. While the

Bulk Erase cycle is in progress, the Status Register may be read to check the value of the

Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk

Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is

completed, the Write Enable Latch (W EL) bit is res et .

The Bulk Erase (BE) instruction is executed only if all Block Protect (BP2, BP1, BP0) bits

are 0. The Bulk Erase (BE) instruction is ignored if one, or more, sectors are protected.

Figure 17. Bulk Erase (BE) instruction sequence

AI03752D

21 345670

Instruction

M25P16 Instructions

31/59

6.11 Deep Power-down (DP)

Executing the Deep Power-down (DP) instruction is the only way to put the device in the

lowest consumption mode (the Deep Power-down mode). It can also be used as a soft ware

protection mechanism, while the device is not in active use, as in this mode, the device

ignores all Write, Program and Erase instructions.

Driving Chip Select (S) High deselects the device, and put s th e device in the Standby mode

(if there is no internal cycle currently in progress). But this mode is not the De ep Power-

down mode. The Deep Power-down mode can only be entered by executing the Deep

Power-down (DP) instruction, su bsequently redu cing the st andby current (from ICC1 to ICC2,

as specified in Table 14).

To t ake the device out of De ep Power-down mode, th e Release from Deep Power-down and

Read Electronic Signature (RES) instruction must be issued. No other instruction must be

issued while the device is in Deep Power-down mode.

The Release from Deep Power- down and Read Electr on ic Sig nature (RES) in structio n a lso

allows the electronic signature of the device to be output on Serial Data output (Q).

The Deep Power-down mode automatically stops at power-down, and the device always

powers up in the Standby mode.

The Deep Power-down (DP) instruction is entered by driving Chip Select (S) Low, followed

by the instruction code on Serial Data input (D). Chip Select (S) must be driven Low for the

entire duration of the sequence.

The instruction sequence is shown in Figure 18.

Chip Select (S) must be driven High after the eighth bit of the instruction code has been

latched in, otherwise th e Deep Power-down (DP) instr uction is not executed. As soon as

Chip Select (S) is driven High, it requires a delay of tDP before the supp ly curren t is reduced

to ICC2 and the Deep Power-down mode is entered.

Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in

progress, is rejected without having any effects on the cycle that is in progress.

Figure 18. Deep Power-down (DP) instruction sequenc e

AI03753D

21 345670tDP

Deep Power-down mode

Standby mode

Instruction

Instructions M25P16

32/59

6.12 Release from Deep Power-down and Read Electronic

Signature (RES)

To t ake the device out of De ep Power-down mode, th e Release from Deep Power-down and

Read Electronic Signature (RES) instruction must be issued. No other instruction must be

issued while the device is in Deep Power-down mode.

The instruction can also be used to read, on Serial Data output (Q), the old-style 8-bit

electronic signatur e, whose value for the M25P16 is 14h.

Please note that this is not the same as, or even a subset of, the JEDEC 16-bit electronic

signature that is read by the Read Identifier (RDID) instruction. The old-style e lec tr on ic

signature is supported for reasons of backward compatibility, only, and should not be used

for new designs. New designs should, instead, make use of the JEDEC 16-bit electronic

signature, and the Read Identifier (RDID) instruction.

Except while an Erase, Program or Write Status Register cycle is in progress, the Release

from Deep Power-down and Read Electronic Signature (RES) instruction always provides

access to the old-style 8-bit electronic signature of the device , and can be applied even if

the Deep Power-down mode has not been entered.

Any Release from Deep Power-down and Re ad Electronic Signature (RES) instruction while

an Erase, Program or Wr ite Status Register cycle is in progress, is not deco ded, and has no

effect on the cycle that is in progress.

The device is first selected by driving Chip Select (S) Low. The instruction code is followed

by 3 dummy bytes, each bit being latched-in on Serial Data input (D) during the rising edge

of Serial Clock (C). Then, the old-style 8-bit electronic signature, stored in the memory, is

shifted out on Serial Data output (Q), each bit being shifted out during the falling edge of

Serial Clock (C).

The instruction sequence is shown in Figure 19.

The Release from Deep Power-down and Read Electronic Signature (RES) instruction is

terminated by driving Chip Select (S) High after the electronic signature has been read at

least once. Sending additional clock cycles on Serial Clock (C), while Chip Select (S) is

driven Low, cause the electronic signature to be output repeatedly.

When Chip Select (S) is driven High, the device is put in the Standby Power mode. If the

device was not previously in the Deep Power-down mode, the transition to the S tandby

Power mode is immediate. If the device was previously in the Deep Power-down mode,

though, the transition to the Standby Power mode is delayed by tRES2, and Chip Select (S)

must remain High for at least tRES2(max). Once in the Standby Power mode, the device

waits to be selected, so that it can receive, decode and execute instructions.

M25P16 Instructions

33/59

Figure 19. Release from Deep Power-down and Read Electronic Signature (RES) instruction

sequence and data-out sequence

1. The value of the 8-bit electronic signature, for the M25P16, is 14h.

Figure 20. Release from Deep Power-down (RES) instruction sequence

Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device, but before

the whole of the 8-bit electronic signa ture has been tr ansmitted for the first time ( as shown in Figure 20),

still ensures that the device is put into Standby Power mode. If the device was not previously in the Deep

Power-down mode, the transition to the Standby Power mode is immediate. If the device was previously

in the Deep Power-down mode, though, the transition to the Standby Power mode is delayed by tRES1,

and Chip Select (S) must remain High for at least tRES1(max). Once in the Standby Power mode, the

device waits to be selected, so that it can receive, decode and execute instructions.

AI04047C

21 345678910 2829303132333435

2221 3210

36 37 38

765432 0

High Impedance Electronic Signature Out

Instruction 3 Dummy bytes

MSB

Standby mod

Deep Power-down mode

MSB

tRES2

AI04078B

21 345670tRES1

Standby mode

Deep Power-down mode

QHigh Impedance

Instruction

Power-up and power-down M25P16

34/59

7 Power-up and power-down

At power-up and po wer-do wn, the device must not b e selected (that is Chip Sel ect (S ) must

follow the voltage applied on VCC) until VCC reaches the correct value:

VCC(min) at power-up, and then for a further delay of tVSL

VSS at power-down

A safe configuration is provided in Section 3: SPI modes.

To avoid data corruption and inadvertent write operations during power-up, a Power-On

Reset (POR) circuit is included. The logic inside the device is held reset while VCC is less

than the Power-On Reset (POR) threshold voltage, VWI – all operations ar e disa b l ed , an d

the device does not respond to any instruction.

Moreover, the device ignores all Write Enable (WREN), Page Program (PP), Sector Erase

(SE), Bulk Erase (BE) and W rite Status Register (WRSR) instructions until a time delay of

tPUW has elapsed after the moment that VCC rises above the VWI threshold. However, the

correct operation of the de vice is not guaran teed if, by this time , VCC is still below VCC(min).

No Write Status Register, Program or Erase instructions should be sent until the later

occuranc e of:

tPUW after VCC passed the VWI threshold

tVSL after VCC passed the VCC(min) level.

These values are sp ec ified in Table 8.

If the delay, tVSL, has elapsed, after VCC has risen above VCC(min), the device can be

selected for READ instructions even if the tPUW delay is not yet fully elapsed.

At power-up, the device is in the following state:

The device is in the Standby mode (not the Deep Power-down mode)

The Write Enab le Latch (WEL) bit is reset

The Write In Progress (WIP) bit is reset.

Normal precautions must be taken for supply rail decoupling, to stabilize the VCC supply.

Each device in a system should have the VCC rail decoupled by a suitable cap acitor close to

the package pins. Generally, this capacitor is of the order of 100 nF.

At power-down, when VCC drops from the operating voltage to below the Power-On Reset

(POR) threshold voltage, VWI, all operations are disabled and the device does not respond

to any instruction. The designer needs to be aware that if a power-down occurs while a

Write, Program or Erase cycle is in prog ress, some data corruption can result.

M25P16 Initial delivery state

35/59

Figure 21. Power-up timing

1. These parameters are characterized only.

8 Initial delivery state

The device is delivered with the memory arr ay erased: all bits are set to ‘1’ (each byte

contains FFh). The Status Register contains 00h (all Status Register bits are 0).

Table 8. Power-up timing and VWI threshold

Symbol Parameter Min Max Unit

tVSL(1) VCC(min) to S Low 30 — µs

tPUW(1) Time delay to Write instruction 1 10 ms

VWI(1) Write Inhibit voltage 1.0 2.1 V

VCC

AI04009C

VCC(min)

VWI

Reset state

of the

device

Chip selection not allowed

Program, Erase and Write commands are rejected by the device

tVSL

tPUW

tim

Read access allowed Device fully

accessible

CC(max)

Maximum rating M25P16

36/59

9 Maximum rating

Stressing the device above the rating listed in Table 9: Absolute maximum ratings may

cause permanent damage to the device. These are stress ratin gs only and operation of the

device at these or any ot he r co nd itio ns abo ve tho se ind i ca te d in th e o per at i ng sec tion s of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect device reliability. Refer also to the Numonyx SURE Program

and other relevant quality documents.

Table 9. Absolute maximum ratings

Symbol Parameter Min Max Unit

TSTG Storage temperature –65 150 °C

TLEAD Lead temperature during solde rin g — see (1)

1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the Numonyx RoHS

compliant 7191395 specification, and the European directive on Restrictions on Hazardous Substances

(RoHS) 2002/95/EU.

°C

VIO Input and output voltage (with respect to ground) –0.6(2)

2. The minimum voltage may reach the value of -2 V for no more than 20 ns during transitions.

VCC +0.6

(3)

3. The maximum voltage may reach the value of VCC+2 V for no more than 20 ns during transitions.

VCC Supply voltage –0.6 4.0 V

VESD Electrostatic discharge voltage (Human Body model)(4)

4. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).

–2000 2000 V

M25P16 DC and AC parameters

37/59

10 DC and AC parameters

This section summarizes the operating and measurement conditions, and the DC and AC

characteristics of the device. The parameters in the DC and AC characteristic tables that

follow are derived from tests performed under the measurement conditions summarized in

the relevant tables. Designers should check that the operating conditions in their circuit

match the measurement conditions when relying on the quoted parameters.

Figure 22. AC measurement I/O waveform

Table 10. Operating conditions

Symbol Parameter Min Max Unit

VCC Supply voltage 2.7 3.6 V

TAAmbient operating temperature grade 3 –40 125 °C

grade 6 –40 85 °C

Table 11. Data retention and endurance

Parameter Condition Min Max Unit

Program/Erase Cycles Grade 3, Autograde 6,

Grade 6 100000 — Cycles per Sector

Data Retention at 55°C 20 — years

Table 12. AC measurement conditions

Symbol Parameter Min Max Unit

Load capacitance 30 pF

Input rise and fall times 5 ns

Input pulse voltages 0.2VCC to 0.8VCC V

Input timing reference voltages 0.3VCC to 0.7VCC V

Output timing reference voltages VCC / 2 V

Table 13. Capacitance(1)

1. Sampled only, not 100% tested, at TA= 25 °C and a frequency of 20 MHz.

Symbol Parameter Test Condition Min Max Unit

COUT Output capacitance (Q) VOUT = 0 V — 8 pF

CIN Input capacitance (other pins) VIN = 0 V — 6 pF

AI07455

0.8VCC

0.2VCC

0.7VCC

0.3VCC

Input and output

timing reference levels

Input levels

0.5VCC

DC and AC parameters M25P16

38/59

Table 14. DC characteristics

Symbol Parameter T est condition (in addition

to those in Table 10)Min Max Unit

ILI Input leakage current — — ± 2 µA

ILO Output leakage current — — ± 2 µA

ICC1 Standby current Grade 6 S = VCC, VIN = VSS or VCC —50µA

Grade 3 — 100 µA

ICC2 Deep Power-down

current Grade 6 S = VCC, VIN = VSS or VCC —10µA

Grade 3 — 100 µA

ICC3 Operating current (READ)

C=0.1V

CC / 0.9.VCC at

75 MHz, Q = open —8mA

C=0.1V

CC / 0.9.VCC at

33 MHz, Q = open —4mA

ICC4 Operating current (PP) S = VCC —15mA

ICC5 Operating current (WRSR) S = VCC —15mA

ICC6 Operating current (SE) S = VCC —15mA

ICC7 Operating current (BE) S = VCC —15mA

VIL Input low voltage — – 0.5 0.3VCC V

VIH Input high voltage — 0.7VCC VCC+0.4 V

VOL Output low voltage IOL = 1.6 mA — 0 .4 V

VOH Output high voltage IOH = –100 µA VCC–0.2 — V

M25P16 DC and AC parameters

39/59

Table 15. AC characteristics (110 nm technology)

Applies only to products made with 110 nm technology

Test conditions sp e ci f ie d in Table 10 an d Table 12

Symbol Alt. Parameter Min Typ(1) Max Unit

fCfC

Clock frequency for the followi ng instructions:

FAST_READ, PP, SE, BE, DP, RES, WREN,

WRDI, RDID, RDSR, WRSR DC — 75 MHz

fRClock frequency for READ instructio ns DC — 33 MHz

tCH(2) tCLH Clock High time 6 — — ns

tCL(1) tCLL Clock Low time 6 — — ns

tCLCH(3) Clock Rise time(4) (peak to peak) 0.1 — — V/ns

tCHCL(3) Clock Fall time (4) (peak to peak) 0.1 — — V/ns

tSLCH tCSS S Active Setup time (relative to C) 5 — — ns

tCHSL S Not Active Hold time (relative to C) 5 — — ns

tDVCH tDSU Data In Setup time 2 — — ns

tCHDX tDH Data In Hold time 5 — — ns

tCHSH S Active Hold time (relative to C) 5 — — ns

tSHCH S Not Active Setup time (rela tive to C) 5 — — ns

tSHSL tCSH S Deselect time 100 — — ns

tSHQZ(3) tDIS Output Disable time — — 8 ns

tCLQV tVClock Low to Output Valid under 30 pF/10 p F — — 8/6 ns

tCLQX tHO Output Hold time 0 — — ns

tHLCH HOLD Setup time (relative to C) 5 — — ns

tCHHH HOLD Hold time (relative to C) 5 — — ns

tHHCH HOLD Setup time (relative to C) 5 — — ns

tCHHL HOLD Hold time (relative to C) 5 — — ns

tHHQX(3) tLZ HOLD to Output Low-Z — 8 ns

tHLQZ(3) tHZ HOLD to Output High-Z — 8 ns

tWHSL(5) Write Protect Setup time 20 — — ns

tSHWL(5) Write Protect Hold time 100 — — ns

tDP(3) S High to Deep Power-down mode — — 3 µs

tRES1(3) S High to Standby mode without Read

Electronic Signature —— 30µs

tRES2(3) S High to Standby mode with Read Electronic

Signature —— 30µs

tWWrite Status Register cycle time — 1.3 15 ms

DC and AC parameters M25P16

40/59

tPP (6)

Page Program cycle time (256 bytes) — 0.64

5ms

Page Program cycle time (n bytes, where n = 1

to 4) —0.01

Page Program cycle time (n bytes, where n = 5

to 256) — int(n/8) × 0.02(7)

tSE Sector Erase cycle time — 0.6 3 s

tBE Bulk Erase cycle time — 13 40 s

1. Typical values given for TA = 25 °C.

2. tCH + tCL must be greater than or equal to 1/ fC.

3. Value guaranteed by characterization, not 100% tested in production.

4. Expressed as a slew-rate.

5. Only applicable as a constraint for a WRSR instruction when SRWD is set at ‘1’.

6. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are

obtained with one sequence including all the bytes ve rsus several sequences of only a few bytes (1 ≤ n ≤

256).

7. int(A) corresponds to the upper integer part of A. For instance, int(12/8) = 2, int(32/8) = 4, int(15.3) =16.

Table 15. AC characteristics (110 nm technology) (continued)

Applies only to products made with 110 nm technology

Test conditions sp e ci f ie d in Table 10 an d Table 12

Symbol Alt. Parameter Min Typ(1) Max Unit

M25P16 DC and AC parameters

41/59

Table 16. AC characteristics (25 MHz operation)

Test conditions specified in Table 10 an d Table 12

Symbol Alt. Parameter Min Typ Max Unit

fCfC

Clock frequency for the following instructions:

FAST_READ, PP, SE, BE, DP, RES, WREN,

WRDI, RDSR, WRSR DC — 25 MHz

fRClock frequency for READ instructions DC — 20 MHz

tCH(1) tCLH Clock High time 18 — — ns

tCL(1) tCLL Clock Low time 18 — — ns

tCLCH(2) Clock Rise time(3) (peak to peak) 0.1 — — V/ns

tCHCL(2) Clock Fall time(3) (peak to peak) 0.1 — — V/ns

tSLCH tCSS S Active Setup time (relative to C) 10 — — ns

tCHSL S Not Active Hold time (relative to C) 10 — — ns

tDVCH tDSU Data In Setup time 5 — — ns

tCHDX tDH Data In Hold time 5 — — ns

tCHSH S Active Hold time (relative to C) 10 — — ns

tSHCH S Not Active Setup time (rel ative to C) 10 — — ns

tSHSL tCSH S Deselect time 100 — — ns

tSHQZ(2) tDIS Output Disable time — — 15 ns

tCLQV tVClock Low to Output Valid — — 15 ns

tCLQX tHO Output Hold time 0 — — ns

tHLCH HOLD Setup time (relative to C) 10 — — ns

tCHHH HOLD Hold time (relative to C) 10 — — ns

tHHCH HOLD Setup time (relative to C) 10 — — ns

tCHHL HOLD Hold time (relative to C) 10 — — ns

tHHQX(2) tLZ HOLD to Output Low-Z — 15 ns

tHLQZ(2) tHZ HOLD to Output High-Z — 20 ns

tWHSL(4) Write Protect Setup time 20 — — ns

tSHWL(4) Write Protect Hold time 100 — — ns

tDP(2) S High to Deep Power-down mode — — 3 µs

tRES1(2) S High to Standby mode without Electroni c

Signature Read —— 3 µs

tRES2(2) S High to Standby mode with Electronic

Signature Read —— 1.8 µs

tW(5) Wr ite Status Register cycle time — 1.5 15 ms

1. tCH + tCL must be greater than or equal to 1/ fC.

2. Value guaranteed by characterization, not 100% tested in production.

3. Expressed as a slew-rate.

4. Only applicable as a constraint for a WRSR instruction when SRWD is set at ‘1’.

DC and AC parameters M25P16

42/59

Figure 23. Serial input timing

Figure 24. Write Protect setup and hold timing during WRSR when SRWD = 1

5. Typical values given for TA = 85 °C.

AI01447C

MSB IN

tDVCH

High Impedance

LSB IN

tSLCH

tCHDX

tCHCL

tCLCH

tSHCH

tSHSL

tCHSHtCHSL

High Impedance

tWHSL tSHWL

AI0743

M25P16 DC and AC parameters

43/59

Figure 25. Hold timing

Figure 26. Output timing

AI02032

HOLD

tCHHL

tHLCH

tHHCH

tCHHH

tHHQXtHLQZ

AI01449e

LSB OUT

DADDR.LSB IN

tSHQZ

tCH

tCL

tQLQH

tQHQL

tCLQX

tCLQV

tCLQX

tCLQV

Package mechanical M25P16

44/59

11 Package mechanical

In order to meet envi ronmental re quirements, Numonyx offers these devices in RoHS

compliant package s, which have a Lead-free second level interconnect. The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label.

Figure 27. VFQFPN8 (MLP8) 8-lead very thin fine pitch quad flat package no lead,

6 × 5 mm, package outline

1. Drawing is not to scale.

2. The circle in the top view of the package indicates the position of pin 1.

70-M

AA3

eE2

ddd

bbb

CAB

aaa CAA

aaa CB

0.10 CA

0.10 CB

M25P16 Package mechanical

45/59

Table 17. VFQFPN8 (MLP8) 8-lead very thin fine pitch quad flat package no lead,

6 × 5 mm, package mechanical data

Symbol millimeters inches

Typ Min Max Typ Min Max

A 0.85 0.80 1.00 0.033 0.031 0.039

A1 — 0.00 0.05 — 0.000 0.002

A2 0.65 — — 0.026 — —

A3 0.20 — — 0.008 — —

b 0.40 0.35 0.48 0.016 0.014 0.019

D6.00— — 0.236— —

D1 5.75 — — 0.226 — —

D2 3.40 3.20 3.60 0.134 0.126 0.142

E5.00— — 0.197— —

E1 4.75 — — 0.187 — —

E2 4.00 3.80 4.30 0.157 0.150 0.169

e1.27— —0.050— —

R1 0.10 0.00 — 0.004 0.000 —

L 0.60 0.50 0.75 0.024 0.020 0.029

Θ— — 12° — — 12°

aaa — — 0.15 — — 0.006

bbb — — 0.10 — — 0.004

ddd — — 0.05 — — 0.002

Package mechanical M25P16

46/59

Figure 28. VDFPN8 (MLP8) 8-lead very thin dual flat package no lead, 8 × 6 mm,

package outline

1. Drawing is not to scale.

2. The circle in the top view of the package indicates the position of pin 1.

Table 18. VDFPN8 (MLP8) 8-lead very thin dual flat package no lead, 8 × 6 mm,

package mechanical data

Symbol millimeters inches

Typ Min Max Typ Min Max

A 0.85 1.00 0.033 0.039

A1 — 0.00 0.05 0.000 0.002

b 0.40 0.35 0.48 0.016 0.014 0.019

D8.00— —0.315— —

D2 5.16 — (1)

1. D2 Max should not exceed (D – K – 2 × L).

0.203 — —

ddd — — 0.05 — — 0.002

E6.00— —0.236— —

E2 4.80 — — 0.189 — —

e1.27— —0.050— —

K 0.82 — — 0.032

L 0.50 0.45 0.60 0.020 0.018 0.024

L1 — — 0.15 — — 0.006

N8 8

VDFPN-02

A1 ddd

M25P16 Package mechanical

47/59

Figure 29. SO8N – 8 lead plastic small outline, 150 mils body width, package outline

1. Drawing is not to scale.

Table 19. SO8N – 8 lead plastic small outline , 150 mils body width, package

mechanical data

Symbol millimeters inches

Typ Min Max Typ Min Max

A——1.75——0.069

A1 — 0.10 0.25 — 0.004 0.010

A2 — 1.25 — — 0.049

b — 0.28 0.48 — 0.011 0.019

c — 0.17 0.23 — 0.007 0.009

ccc — — 0.10 — — 0.004

D 4.90 4.80 5.00 0.193 0.189 0.197

E 6.00 5.80 6.20 0.236 0.228 0.244

E1 3.90 3.80 4.00 0.154 0.150 0.157

e1.27— —0.050— —

h — 0.25 0.50 — 0.010 0.020

k—0°8°—0°8°

L — 0.40 1.27 — 0.016 0.050

L1 1.04 — — 0.041 — —

SO-A

ccc

h x 45˚

0.25 mm

GAUGE PLANE

Package mechanical M25P16

48/59

Figure 30. SO8W – 8 lead plastic small outline, 208 mils bod y width, p ack age outline

1. Drawing is not to scale.

Table 20. SO8 wide – 8 lead plastic small outline, 208 mils body width,

package mechanical data

Symbol millimeters inches

Typ Min Max Typ Min Max

A——2.50——0.098

A1 — 0.00 0.25 — 0.000 0.010

A2 — 1.51 2.00 — 0.059 0.079

b 0.40 0.35 0.51 0.016 0.014 0.020

c 0.20 0.10 0.35 0.008 0.004 0.014

CP — — 0.10 — — 0.004

D——6.05——0.238

E — 5.02 6.22 — 0.198 0.245

E1 — 7.62 8.89 — 0.300 0.350

e1.27— —0.050— —

k — 0° 10° — 0° 10°

L — 0.50 0.80 — 0.020 0.031

N8 8

6L_ME

LA1 k

M25P16 Package mechanical

49/59

Figure 31. SO16 wide – 16-lead plastic small outline, 300 mils body width, package

outline

1. Drawing is not to scale.

Table 21. SO16 wide – 16-lead plastic small outline, 300 mils body width,

mechanical data

Symbol millimeters inches

Typ Min Max Typ Min Max

A — 2.35 2.65 — 0.093 0.104

A1 — 0.10 0.30 — 0.004 0.012

B — 0.33 0.51 — 0.013 0.020

C — 0.23 0.32 — 0.009 0.013

D — 10.10 10.50 — 0.398 0.413

E — 7.40 7.60 — 0.291 0.299

e 1.27 — — 0.050 — —

H — 10.00 10.65 — 0.394 0.419

h — 0.25 0.75 — 0.010 0.030

L — 0.40 1.27 — 0.016 0.050

θ— 0° 8° — 0° 8°

ddd — — 0.10 — — 0.004

SO-H

LA1

ddd

h x 45˚

Package mechanical M25P16

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Figure 32. PDIP8 – 8 lead Plastic Small Outline, 300 mils body width, package

outline

1. Package is not to scale.

Table 22. PDIP8 – 8 lead Plastic Small Outline, 300 mils body width, package

mechanical data

Symbol millimeters inches

Typ Min Max Typ Min Max

A——4.80——0.188

A1 0.50 — — 0.019 — —

A2 3.10 3.30 3.50 0.122 0.129 0.137

b 0.38 — 0.55 0.014 — 0.021

b2 1.47 1.52 1.57 0.057 0.059 0.061

c 0.21 — 0.35 0.008 — 0.013

D 9.10 9.20 9.30 0.358 0.362 0.366

E 7.62 7.87 8.25 0.300 0.309 0.324

E1 6.25 6.35 6.45 0.246 0.250 0.253

e — 2.54 — — 0.100 —

eA — 7.62 — — 0.300 —

eB 7.62 8.80 10.90 0.300 0.346 0.429

L 2.92 3.30 3.81 0.114 0.122 0.150

PDIP-B

M25P16 Package mechanical

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Figure 33. UFDFPN (MLP8) 8-lead ultra t hin f ine p itch dua l flat package no lead, 4X3

mm package mechanical data

1. Drawing is not to scale.

Package mechanical M25P16

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Table 23. UFDFPN (MLP8) 8-lead ultra thin f i ne pit ch dua l flat package no lead, 4X3

mm package mechanical data(1)

1. Maximum package warpage is 0.05 mm; maximum allowable burrs is 0.076 mm in all directions; and

bilateral coplanarity zone applies to the exposed heat sink slug as well as the terminals.N is the total

number of terminals.

Symbol Databook (mm) Drawing (mm)

Typ Min Max Typ Min Max

A 0.55 0.45 0.60 0.55 0.45 0.60

A1 0.02 0.00 0.05 0.02 0.00 0.05

A3 0.127 0.15 0.127 0.15

θ0° 12° 0° 12°

D2 0.80 0.70 0.90 0.80 0.70 0.90

E2 0.20 0.10 0.30 0.20 0.10 0.30

e 0.80 0.80

N(2)

2. N is the total number of terminals.

ND(3)

3. ND refers to the number of terminals on D side.

b(4)

4. Dimension b applies to metallized terminal and is measured between 0.15 and 0.30mm From terminal tip.

if the terminal has the optional radius on the other end of the terminal, The dimension b should not be

measured in that radius area.

0.30 0.25 0.35 0.30 0.25 0.35

L 0.60 0.55 0.65 0.60 0.55 0.65

D 4.00 3.90 4.10 4.00 3.90 4.10

E 3.00 2.90 3.10 3.00 2.90 3.10

M25P16 Ordering Information, Standard Parts

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12 Ordering Information, Standard Parts

Table 24. Ordering information scheme

Example: M25P16 – V MN 6 T P B A

Device type

M25P = Serial Flash memory for code storage

Device fun cti on

16 = 16 Mbit (2 Mbit × 8)

Security features(1)

– = no extra security

S = CFD programmed with UID

Operating voltage

V = VCC = 2.7 V to 3.6 V

Package

MP = VFDFPN8 6 × 5 mm (MLP 8)

ME = VDFPN8 8 × 6 mm (MLP8)(2)

MN = SO8N (150 mils width)

MW = SO8W (208 mils width)

MF = SO16 (300 mils width)

BA = PDIP8 (300 mils width)

MC = UFDFPN8 (MLP8), 4 x 3 mm

Device grade

6 = Industrial temperature range, –40 to 85 °C.

Device tested with standard test flow

3(3) = Automotive temperature range, –40 to 125 °C.

Device tested with high reliability certified flow.(4)

Option

blank = Standard packing

T = Tape and reel packing

Plating Technology

P or G = RoHS compliant

Lithography

blank = 110nm, Catania Diffusion Plant

B = 110nm, Fab.2 Diffusion Plant

Automotive Grade

A(4) = Automotive –40 °C to 125 °C Part

Device tested with high reliability certified flow(3).

blank = standard –40 to 85 °C device

1. Secure options are available upon customer request.

2. Not for new design, please use MP package version of the device.

3. Device grade 3 available in an SO8 RoHS compliant package.

Ordering Information, Standard Parts M25P16

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Note: For a list of available option s (speed, p ackage, etc.), for further information on any aspect of

this device or when ordering parts operating at 75 MHz (0.11 µm, process digit ‘4’), please

contact your nearest Numonyx Sales Office.

4. Numonyx strongly recommends the use of the Automotive Grade devices (AutoGrade 6 and Grade 3) for use in an

automotive environment. The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801.

M25P16 Ordering Information, Automotive Parts

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13 Ordering Information, Automotive Parts

Note: Numonyx strongly recommends the use of the Automotive Grade devices (Auto Grade 6

and 3) in an automotive envirnoment. The high reliability certified flow (HRCF) is described

in the quality note QNEE9801. Please ask your Numonyx sales office for a copy.

Table 25. Ordering information scheme

Example: M25P16 – V MN 6 T P B A

Device type

M25P = Serial Flash memory for code storage

Device fun cti on

16 = 16 Mbit (2 Mbit × 8)

Security features

– = no extra security

Operating voltage

V = VCC = 2.3 to 3.6 V

Package

MN = SO8N (150 mils width)

MF = SO16 (300 mils width)

Device grade

6 = Industrial temperature range, –40 to 85 °C.

Device tested with high reliability certified flow

3 = Automotive temperature range, –40 to 125 °C.

Device tested with high reliability certified flow.

Option

blank = Standard packing

T = Tape and reel packing

Plating Technology

P or G = RoHS compliant

Lithography

/4 = 110nm, Catania Diffusion Plant (no t suggested for

new design)

B = 110nm, Fab.2 Diffusion Plant

Automotive Grade

blank = Automotive –40 to 125 °C part

A = Automotive –40 °C to 85 °C part (used ONLY in

conjunction with Device Grade 6 to distinguish the Auto

Tested Parts from the non Auto Tested parts).

Revision history M25P16

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14 Revision history

Table 26. Document revision history

Date Revision Changes

16-Jan-2002 0 .1 Target Specificatio n Document written

23-Apr-2002 0.4

Clarification of descriptions of entering Stan dby Power mode from Deep

Power-down mode, and of terminating an instruction sequence or data-

out sequence.

ICC2(max) value changed to 10µA

13-Dec-2002 0.5

Typical Page Program time improved. Write Protect setup and hold times

specified, for applications that switch Write Protect to exit the Hardware

Protection mode immediately before a WRSR, and to enter the Hardware

Protection mode again immediately after

15-May-

2003 0.6 MLP8 package added

0.7 50MHz operation, and RDID instruction added. Published internally, only

20-Jun-2003 0.8 8x6 MLP8 and SO16 (300 mil) packages added

24-Sep-2003 1.0 tPP, tSE and tBE revised. SO16 package code changed. Output Timing

Reference Voltage changed. Docu ment promoted to Preliminary Data.

24-Nov-2003 2.0

Table of contents, warning about exposed paddle on MLP8, and Pb-free

options added.

Value of tVSL(min) and tBE(typ) changed. Change of naming for VDFPN8

packages. Document promoted to full Datasheet.

17-May-

2004 3.0 MLP8(5x6) package removed. Soldering temperature information

clarified for RoHS complian t devices. Device Grade clarified

01-Apr-2005 4.0

Notes 1 and 2 removed from Table 24: Ordering information scheme.

Small text changes.

Read Identification (RDID) , Deep Power-down (DP) and Release from

Deep Power-down and Read Electronic Signature (RES) instructions,

and Active Power, Standby Power and Deep Power-down modes

paragraph clarified.

01-Aug-2005 5.0 Updated Page Program (PP) instructions in Page programming, Page

Program (PP) and Table 15: AC characteri stics (Grade 6).

20-Oct-2005 6.0

VFQFPN8 package added (see Figure 27: VFQFPN8 (MLP8) 8-lead very

thin fine pitch quad flat package no lead, 6 × 5 mm, package outline and

Table 17: VFQFPN8 (MLP8) 8-lead very thin fine pitch quad flat package

no lead, 6 × 5 mm, package mechanical data).

All packages are RoHS compliant. “Blank” option removed under Plating

Technology.

27-Feb-2006 7

SO8 Narrow and SO8 Wide packages added (see Section 11: Package

mechanical). VDFPN8 package updated (see Table 18: VDFPN8 (MLP8)

8-lead very thin dual flat package no lead, 8 × 6 mm, package

mechanical data). Note 2 add ed to Table 24: Ordering info rmation

scheme.

04-Jul-2006 8 F igure 4: Bus master an d memory devices on the SPI bus updated and

Note 2 added. SO8N package specifications updated (see Figure 29 and

Table 19). Small text changes.

M25P16 Revision history
 57/59
10-Oct-2006 9
Page Program, Sector Erase and Bulk Erase updated in Features.
VIO max modified in Table 9: Absolute maximum ratings.
Table 15: AC chara cteristics (110  nm technology) added.
VFQFPN8 package specifications updated (see Table 17). Note 1 added 
to Table 18. Note: on page 54 modified.
09-Jan-2007 10
Small text changes. Hardware Write protection added to Features.
VCC supply voltage and VSS ground signal descriptions added. Figure 4: 
Bus master and memory devices on the SPI bus modified, note 2 
removed and replaced by an explanatory paragraph. Write In Progress bit 
behavior specified at Power-up (see Section 7: Power-up and power-
down). TLEAD added to Table 9: Absolute maximum ratings. Grade 3 
temperature range added.
Table 11: Data retention and endurance and Table 16: AC characteristics 
(25 MHz operation) add ed.
SO8W and VFQFPN8 package specifications updated (see Section 11: 
Package mechanical).
15-Jun-2007 11
Eliminated the reference to the Deep Power-down mode and updated the 
Read Identification instruction in Section 6.3: Read Identification (RDID).
Inserted UID and CFI content columns in Table 5: Read Identificati on 
(RDID) data-out sequence.
Modified Data bytes for RDID instruction in Table 4: Instruction set.
Modified Q signal in Figure 10: Read Identification (RDID) instruction 
sequence and data-out sequence .
Modified Test condition and maximum va lues for ICC3 in Table 14: DC 
characteristics.
Eliminated Table 15: AC characteristics (Grade 6).
Modified the maximum value for fC in Table 15: AC characteristics (110 
nm technology).
31-Oct-2007 12
Removed ‘low voltage’ from the title. Changed the typical time for Bulk 
Erase on page 1.
Section 6.3: Rea d Identifi cation (RDID) updated. 
Added note 2 and 3 to Table 9: Absolute maximum ratings.
Modified maximum value for tCLQV in Table 15: AC characteristics (110 
nm technology).
10-Dec-2007 13 Applied Numonyx branding.
20-Jun 2008 14
Added a reference to customer’s ability to request dedicated part number 
in Section 6.3: Read Identification (RDID) on page 20.
Moved specifications in “max” column to “min” column and changed the 
“min” for grade 3 to 10,000 in Table 11: Data retention and endurance on 
page 37.
Deleted “grade 6” reference in Table 15: AC characteristics (110 nm 
technology) on page 39 .
Deleted “grade 3” reference and “preliminary note” in  Tab le 16: AC 
characteristics (25 MHz operatio n) on page 41.
Revised Section 12: Ordering Information, Standard Parts on page 53.
5-Dec-2008 15 Added th e PDIP8 (BA), 300 mils width package information.
Table 26. Document revision history (continued)
Date Revision Changes

Revision history M25P16

58/59

6-March

2008 16 Added “Automotiv e Certified Parts” information to cover page, data

retention table, AC Characteristics table, and ordering information.

3-August-

2009 17

Made changes to the following tables:

Table 8.: Power-up timing and VWI threshold

– vWI changed min and max from 1.5 / 2.5 to 1.0 / 2.1 V respectively.

Table 14.: DC characteristics

– ICC3 (Read) changed from 12 mA to 8 mA.

Table 16.: AC characteristics (25 MHz operation)

– Removed tPP, tSE, and tBE, and the associated notes.

14-Oct-2009 18 Created separate order information for standard parts and automotive

parts.

23-Feb-2010 19 Added the fo llowing package information:

Figure 33.: UFDFPN (MLP8) 8-lead ultra thin fine pitch dual flat package

no lead, 4X3 mm package mechanical data.

14-April-

2010 20 Corrected package nomenclature.

Table 26. Document revision history (continued)

Date Revision Changes

M25P16

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