AAMOSPEC COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS .. designed for use in general purpose power amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Voltage - Veeoreu= 45V(Min)- BD249,BD250 60V(Min)- BD249A,BD250A 80V(Min)- BD249B,BD250B 100V(Min)- BD249C,BD250C * DC Current Gain hFE= 10(Min)@I,= 15A * Current Gain-Bandwidth Product f,=3.0 MHz (Min)@ |,=1.0A MAXIMUM RATINGS NPN BD249 BD249A BD249B BD249C PNP BD250 BD250A BD250B BD250C 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45 -100 VOLTS 125 WATTS Zaal TO-247(3P) Characteristic Symbol | BD249 | BD249A| BD249B|BD248C/ Unit BD250 |BD250A|BD250B | BD250C Collector-Emitter Voltage Voeo 45 60 80 100 Vv Collector-Base Voltage Veso 55 70 90 115 V Emitter-Base Voltage VeBo 5.0 Vv Collector Current - Continuous Is 25 A - Peak 40 Base Current ls 5 A Total Power Dissipation@T, = 25C Pp 125 Ww Derate above 25C 1.0 wc Operating and Storage Junction Ty Ts1 c Temperature Range -65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case| Rejc 1.0 C FIGURE -1 POWER DERATING 150 125 100 Pp , POWER DISSIPATION(WATTS) o & Ba 0 25 50 75 100 125 150 To , TEMPERATURE(C) B Cl FPN A in 123) JF APL AC 1 PIN 1.BASE 2.COLLECTOR 3.EMITTER DIM MILLIMETERS MIN MAX A 20.63 | 2238 B 15.38 | 16.20 Cc 1.90 2.70 D 5.10 6.10 E 14.81 15.22 F 11.72 | 12.84 G 4.20 450 H 1.82 2.46 | 2.92 3.23 J 0.89 153 K 5.26 5.66 L 1850 | 21.50 M 4.68 5.36 N 2.40 2.80 oO 3.25 3.65 P 0.55 0.70BD249,A,B,C NPN / BD250,A,B,C PNP a ELECTRICAL CHARACTERISTICS ( T,, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) BD249,BD250 Vier)ceo 45 V ( l,= 30 mA, I,= 0) BD249A,BD250A 60 BD249B,BD250B 80 BD249C,BD250C 100 Collector Cutoff Current lcEo mA (Veg= 30 V, 1,= 0) BD249/50/49A/50A 1.0 (Vog= 60 V, I= 0) BD249B/50B/49C/50C 1.0 Collector Cutoff Current lees mA (V.,= 45 V, V.,= 0) BD249/50 0.7 (Vo,= 60 V, V.,= 0) BD249A/50A 0.7 (V._= 80 V, V,,= 0) BD249B/S0B 0.7 (Ve_= 100 V, V,.= 0) BD249C/50C 0.7 Emitter Cutoff Current leBo mA (Vep= 5.0 V, I= 0) 1.0 ON CHARACTERISTICS (1) DC Current Gain hFE (Veg = 4.0 V, I, = 1.5A) 25 (Veg = 4.0 V, I, = 15 A) 10 (Veg = 4.0 V, I, = 25 A) 5.0 Collector-Emitter Saturation Voltage VcE(sat) V (Il, = 15A, lp = 1.5A) 1.8 (lp = 25A, lp =5.0A) 4.0 Base-Emitter On Voltage Vee;on) Vv (Ip =15 A, Voe= 4.0 V) 2.0 (I, =25 A, Vog= 4.0 V) 4.0 DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Prodct (2) fy MHz (lp=1.0 A, Vog=10 V, f= 1MHz) 3.0 (1) Pulse Test: Pulse width = 300s , Duty Cycle = 2.0% (2) f, = |h,.| F ost, TIME (us) hre , DC CURRENT GAIN iC , COLLECTOR CURRENT (Amp) 0.1 2 = 0.3 0.1 4 DC CURRENT GAIN 02 05 1.0 20 5.0 10 20 50 Ic , COLLECTOR CURRENT (AMP) TURN-ON TIME loflan10 Vec=30V Tye28C Veeorr)2V 0.5 1.0 2.0 5.0 10 20 ic , COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE OPERATING AREA (SOA) -- Boning Wire Limit Second Breakdown Thermally Limit T #25C(Sindle Puse) BD249C,BD250C 2 10 20 50 100 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) t, TIME (us) kc, COLLECTOR CURRENT (Amp.) BD249,A,B,C NPN / BD250,A,B,C PNP TURN-OFF TIME Ica t0 IpaFlez Veo#30V Ty25C a) 0.5 1.0 2.0 5.0 10 20 30 ic , COLLECTOR CURRENT (AMP) REVERSE BIASE SAFE OPERATING AREA 40 30 BD249C_,] 20 BD250C BD249B BD2508 8D249A BD250A BD249 BD250 10 20 30 90 100 40 5 70 80 Vee, coitectoR EMIPPER (VOLTS) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate limits of the transistor that must .be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on T ypig=150 C;T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided Type 150C,At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. le-Vece