AS1333
650mA, Step Down DC/DC Converter for Portable Applications
www.austriamicrosystems.com/DC-DC_Step-Down/AS1333 Revision 1.06 1 - 17
Datasheet
1 General Description
The AS1333 is a step-down DC-DC converter designed to power
portable applications from a single Li-Ion battery. The device also
achieves high-performance in mobile phones and other applications
requiring low dropout voltage.
The AS1333 steps down an input voltage of 3.25V to 5.5V to a fixed
output voltage of 3.09V.
Fixed-frequency PWM operation minimizes RF interference.
Shutdown function turns the device off and reduces battery
consumption to 0.01µA (typ.).
The AS1333 is available in a 8-pin WL-CSP package. A high
switching frequency (2 MHz) allows use of tiny surface-mount
components. Only three small external surface-mount components,
an inductor and two ceramic capacitors are required.
2 Key Features
PWM Switching Frequency: 2MHz
Single Lithium-Ion Cell Operation
Fixed Output Voltage (3.09V)
Maximum load capability of 650mA
High Effici ency (96% T yp at 3.6 VIN, 3.09 VOUT at 400mA) from
internal synchronous rectification
Current Overload Protection
Thermal Overload Protection
Soft Start
Low Dropout Voltage (140 mΩ Typ PFET)
8-pin WL-CSP
3 Applications
The AS1333 is an ideal solution for cellular phones, hand-held
radios, RF PC cards, battery powered RF devices, and RFIC
chipsets.
Figure 1. AS1333 - Typical Application Circuit
AS1333
PGND AGND
NC
EN
PVIN VDD
SW
FB
3.09V
10 µF
3.3 µH VOUT
VIN
10 µF
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AS1333
Datasheet - Pin Assignments
4 Pin Assignments
Figure 2. Pin Configuration
4.1 Pin Descriptions
Table 1. Pin Descriptions
Pin Number Pin Name Description
A1 PVIN +2.7V to +5.5V Power Supply Voltage. Input to the internal PFET switch.
Note: For guaranteed VOUT = 3.09V set VIN = 3.25V to 5.5V
B1 VDD +2.7V to +5.5V Power Supply Voltage. Analog Supply Input.
Note: For guaranteed VOUT = 3.09V set VIN = 3.25V to 5.5V
C1 EN Enable Input. Set this digital input high for normal operation. For shutdown, set low.
C2 NC May be connected to VDD, SGND or floating.
C3 FB Feedback Pin. Connect to the output at the output filter capacitor .
B3 AGND Analog and Control Ground. Connect this pin with low resistance to PGND.
A3 PGND Power Ground. Connect this pin with low resistance to AGND.
A2 SW Switch Pin. Switch node connection to the internal PFET switch and NFET synchronous
rectifier. Connect to an inductor with a saturation current rating that exceeds the maximum
switch peak current limit specification of the AS1333.
A3
B3
C3
A1
B1
C1
PGND
AGND
FB
PVIN
VDD
EN C2
NC
A2
SW
A1
B1
C1
A3
B3
C3
PVIN
VDD
EN
PGND
AGND
FB C2
NC
A2
SW
Bottom ViewTop View
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AS1333
Datashee t - A b s o l u t e M a x i mu m R a t i n g s
5 Absolute Maximum Ratings
Stresses beyond those listed in Table 2 may cause permanent damage to the device. These are stress ratings only, and functional operation of
the device at these or any other conditions beyond those indicated in Electrical Characteristics on page 4 is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Table 2. Absolute Maximum Ratings
Parameter Min Max Units Notes
Electrical Parameters
VDD, PVIN to AGND -0.3 +7.0 V
PGND to AGND -0.3 +0.3 V
EN, FB, NC AGND - 0.3 VDD + 0.3 V 7.0V max
SW PGND - 0.3 PVIN + 0.3 V
PVIN to VDD -0.3 +0.3 V
Input Voltage Range 2.7 5.5 V
Recommended Load Current 650 mA
Ambient Temperature (TA) Range -40 +85 ºC
In applications where high power dissipation and/
or poor package thermal resistance is present,
the maximum ambient temperature may have to
be derated.
Maximum ambient temperature (TA-MAX) is
dependent on the maximum operating junction
temperature (TJ-MAX-OP = 125ºC), the maximum
power dissipation
of the device in the application (PD-MAX), and the
junction-to ambient thermal resistance of the
part/package in the application (θJA), as given by
the following
equation: TA-MAX = TJ-MAX-OP – (θJA × PD-MAX).
Electrostatic Discharge
Human Body Model 2 kV Norm: MIL 883 E method 3015
Temperature Ranges and Storage Conditions
Junction Temperature (TJ-MAX)+150 ºC
Storage Temperature Range -55 +125 ºC
Package Body Temperature +260 ºC
The reflow peak soldering temperature (body
temperature) specified is in accordance with IPC/
JEDEC J-STD-020 “Moisture/Reflow Sensitivity
Classification for Non-Hermetic Solid State
Surface Mount Devices”.
Humidity 5 86 % Non-condensing
Moisture Sensitive Level 1 Represents a max. floor life time of unlimited
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AS1333
Datasheet - Electrical Characteristics
6 Electrical Characteristics
TAMB = TJ = -40ºC to +85ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted
.
Typical values are at TAMB=25°C.
6.1 System Characteristics
TA = 25ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted
.
The following parameters are verified by characterisation and are not production
tested
.
Table 3. Electrical Characteristics
Symbol Parameter Conditions Min Typ Max Units
TAMB Operating Temperature Range -40 +85 ºC
VFB Feedback Voltage PVIN = 3.6V 3.028 3.09 3.15 V
ISHDN Shutdown supply current EN = SW = 0V1
1. Shutdown current includes leakage current of PFET.
0.01 2 µA
IQDC bias current into VDD FB = 0V, No Switching2
2. IQ specified here is when the part is operating at 100% duty cycle.
11.4mA
RDSON(P) Pin-Pin Resistance for PFET ISW = 200mA; TAMB = +25°C 140 200 mΩ
ISW = 200mA 230
RDSON(N) Pin-Pin Resistance for NFET ISW = -200mA; TAMB = +25°C 300 415 mΩ
ISW = -200mA 485
ILIM,PFET Switch peak current limit Current limit is built-in, fixed, and not
adjustable. 935 1100 1200 mA
FOSC Internal oscillator frequency 1.8 2 2.2 MHz
VIH,EN Logic high input threshold 1.2 V
VIL,EN Logic low input threshold 0.5 V
IPIN,ENABLE Pin pull down current 5 10 µA
Table 4. System Characteristics
Symbol Parameter Conditions Min Typ Max Units
T_ON Turn on time (time for output to reach
3.09V from Enable low to high
transition)
EN = Low to High, VIN = 4.2V,
VOUT = 3.09V, COUT = 10µF,
IOUT ≤ 1mA 210 350 µs
ηEfficiency
(L = 3.3µH, DCR ≤ 100mΩ)VIN = 3.6V, VOUT = 3.09V,
IOUT = 400mA 96 %
VOUT_ripple Ripple voltage, PWM mode1
1. Ripple voltage should measured at COUT electrode on good layout PC board and under condition using suggested inductors and
capacitors.
Note: All limits are guaranteed. The parameters with min and max values are guaranteed with production tests or SQC (Statistical Quality
Control) methods.
VIN = 4.2V, VOUT = 3.09V,
IOUT = 10mA to 400mA 5mVp-p
Line_tr Line transient response VIN = 600mV perturbance, over Vin range
3.4V to 5.5V
TRISE = TFALL = 10µs, VOUT = 3.09V, IOUT =
100mA 50 mVpk
Load_tr Load transient response VIN = 4.2V, VOUT = 3.09V, transients up
to 100mA, TRISE = TFALL = 10µs 50 mVpk
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AS1333
Datasheet - Typical Operating Characteristics
7 Typical Operating Characteristics
Circuit in Figure 23 on page 10, PVIN = VDD = EN = 3.6V, L = 3.3µH (LPS4018-332ML_), CIN = COUT = 10µF (GRM21BR61C106KA01)
unless otherwise noted;
Figure 3. Quiescent Current vs. VIN Figure 4. Shutdown Current vs. Temperature
0.35
0.4
0.45
0.5
0.55
2.5 3 3.5 4 4.5 5 5.5
S upply Vo ltage (V)
Quiescent Current (mA)
- 45 °C
+ 25° C
+ 85° C 0
0.05
0.1
0.15
0.2
0.25
0.3
-40 -15 10 35 60 85
T e mperatur e ( °C)
S hutdown Cur rent (µ A )
Vin=3.25V
Vin=3.6V
Vin=4.2V
Vin=5.5V
Figure 5. Switching Frequency Variation vs. Temperature Figure 6. Output Voltage vs. Supply Voltage
-4
-3
-2
-1
0
1
2
3
4
-40 -15 10 35 60 85
Temper ature ( ° C)
Switching Frequency V ar iation (%)
Vin=3.6V
Vin=4.2V
Vin=5.5V 3.03
3.05
3.07
3.09
3.11
3.13
3.15
3.25 3.75 4.25 4.75 5.25
S upply Voltage (V)
Out put Voltage (V )
Iout=50mA
Iout=300mA
Iout=650mA
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AS1333
Datasheet - Typical Operating Characteristics
Figure 7. Output Voltage vs. Temperature Figure 8. Efficiency vs. Output Current
3.03
3.05
3.07
3.09
3.11
3.13
3.15
-40 -15 10 35 60 85
T emperat ur e ( °C)
Out put Voltage (V )
Iout=50mA
Iout=300mA
Iout=650mA 70
75
80
85
90
95
100
0 100 200 300 400 500 600 700
Output Current (mA )
Efficiency (%)
Vin=3.25V
Vin=3.6V
Vin=3.9V
Vin=4.2V
Vin=4.5V
Vin=5.5V
Figure 9. Switch Peak Current Limit vs. Temperature; closed loop Figure 10. Load Transient Response; VOUT = 3.09V, VIN = 4.2V
1
1.05
1.1
1.15
1.2
-40 -15 10 35 60 85
T emperat ur e ( °C)
Peak Current Limit (A)
Vin=2.7V
Vin=3.6V
Vin=5.5V
10µs/Div
400mA 200mV/Div 200mA/Div
VOUT
IL
IOUT
100mA
Figure 11. Startup; VIN = 3.6V, VOUT = 3.09V, IOUT<1mA,
RLOAD=3.3kΩ Figure 12. Startup; VIN = 4.2V, VOUT = 3.09V, IOUT<1mA,
RLOAD=3.3kΩ
500mA/DIV 5V/Div
VSW
IL
50µs/Div
VOUTEN
2V/Div
2V/Div
500mA/DIV 5V/Div
VSW
IL
50µs/Div
VOUTEN
2V/Div
1V/Div
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AS1333
Datasheet - Typical Operating Characteristics
Figure 13. Shutdown Response; VIN=3.6V, VOUT=3.09V,
RLOAD=5Ω Figure 14. Shutdown Response; VIN=4.2V, VOUT=3.09V,
RLOAD=5Ω
50µs/Div
500mA/Div 5V/Div
2V/Div
2V/Div
VSW
ILVOUT
EN
50µs/Div
VSW
ILVOUTEN
500mA/Div 5V/Div
2V/Div
2V/Div
Figure 15. Li ne Transient Response; VIN=3.3V to 3.9V,
IOUT=100mA, VOUT=3.09V Figure 16. Timed Current Limit Response; VIN = 3.6V
50µs/Div
100mA/Div 1V/Div
50mV/Div
VIN
IL
VOUT
10µs/Div
2A/Div 2V/Div
2V/Div
VSW
ILVOUT
Figure 17. Output Voltage Ripple; VOUT = 3.09V, IOUT = 200mA Figure 18. VOUT Ripple in Skip Mode; VIN=3.31V, VOUT=3.09V,
RLOAD=5
Ω
200ns/Div
100mA/Div 2V/Div
VSW
IL
5mV/Div
VOUT
1µs/Div
10mV/Div 2V/Div
200mA/Div
VSW
IL
VOUT
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AS1333
Datasheet - Typical Operating Characteristics
Figure 19. RDSON (P-Channel) vs. Temperature; ISW=200mA Figure 20. RDSON (N-Channel) vs. Temperature; ISW=-200mA
0
50
100
150
200
250
300
350
-40 -15 10 35 60 85
Temper ature ( ° C)
RDSON (m )
Vin=2.7V
Vin=3.6V
Vin=5.5V
Ω
0
50
100
150
200
250
300
350
-40 -15 10 35 60 85
Temper ature ( ° C)
RDSON (m )
Vin=2.7V
Vin=3.6V
Vin=5.5V
Ω
Figure 21. EN High Threshold vs. VIN
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
2.5 3 3.5 4 4.5 5 5.5
S upply Voltage (V)
E N High Thr es hold ( V )
- 4 5° C
+ 25°C
+ 90°C
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AS1333
Datasheet - Detailed Description
8 Detailed Description
The AS1333 is a simple, step-down DC-DC converter optimized for powering portable applications that require low dropout voltages such as
mobile phones, portable communicators, and similar battery powered RFIC devices. Besides being packed with numerous features like current
overload protection, thermal overload shutdown and soft start, AS1333 displays the following characteristics:
Its operation is based on current-mode buck architecture with synchronous rectification for high efficiency.
Allows the application to operate at maximum efficiency over a wide range of power levels from a single Li-Ion battery cell.
Provides for a maximum load capability of 650mA in PWM mode, wherein the maximum load range may vary depending on input voltage,
output voltage and the selected inductor.
Is ranked at an efficiency of around 96% for a 400mA load with a 3.6V input and a fixed output voltage of 3.09V.
Figure 22. Functional Block Diagram
AS1333 is fabricated using a chip-scale 8-pin WL-CSP package, which requires special design considerations for implementation. Its fine
bumppitch requires careful board design and precision assembly equipment. This package offers the smallest possible size, for space-critical
applications such as cell phones, where board area is an important design consideration. The size of the external components is reduced by
using a high switching frequency (2MHz). Figure 1 on page 1 demonstrates that only three external power components are required for
implementation. The WL-CSP package is appropriate for opaque case applications, where its edges are not subject to high intensity ambient red
or infrared light. Also, the system controller should set EN low during power-up and other low supply voltage conditions. See Shutdown Mode on
page 11.
Mosfet
Control
Logic
Shutdown
Control
Main Control
Soft Start
Oscillator
Current
Sense
PVIN
PWM
COMP
VDD
Error
Amplifier
FB
NC
EN
SW
AGND PGND
AS1333
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AS1333
Datasheet - Detailed Description
Figure 23. T ypical Operating System Circuit
8.1 Operating the AS1333
AS1333’s control block turns on the internal PFET (P-channel MOSFET) switch during the first part of each switching cycle, thus allowing current
to flow from the input through the inductor to the output filter capacitor and load. The inductor limits the current to a ramp with a slope of around
(VIN - VOUT) / L, by storing energy in a magnetic field.
During the second part of each cycle, the controller turns the PFET switch off, blocking current flow from the input, and then turns the NFET (N-
channel MOSFET) synchronous rectifier on. As a result, the inductor’s magnetic field collapses, generating a voltage that forces current from
ground through the synchronous rectifier to the output filter capacitor and load.
While the stored energy is transferred back into the circuit and depleted, the inductor current ramps down with a slope around VOUT / L. The
output filter capacitor stores charge when the inductor current is high, and releases it when low, smoothing the voltage across the load. The
output voltage is regulated by modulating the PFET switch on time to control the average current sent to the load. The effect is identical to
sending a duty-cycle modulated rectangular wave formed by the switch and synchronous rectifier at SW to a low-pass filter formed by the
inductor and output filter capacitor.
The output voltage is equal to the average voltage at the SW pin.
While in operation, the output voltage is regulated by switching at a constant frequency and then modulating the energy per cycle to control
power to the load. Energy per cycle is set by modulating the PFET switch on-time pulse width to control the peak inductor current. This is done
by comparing the signal from the current-sense amplifier with a slope compensated error signal from the voltage-feedback error amplifier. At the
beginning of each cycle, the clock turns on the PFET switch, causing the inductor current to ramp up. When the current sense signal ramps past
the error amplifier signal, the PWM comparator turns off the PFET switch and turns on the NFET synchronous rectifier, ending the first part of the
cycle.
If an increase in load pulls the output down, the error amplifier output increases, which allows the inductor current to ramp higher before the
comparator turns off the PFET. This increases the average current sent to the output and adjusts for the increase in the load. Before appearing
at the PWM comparator, a slope compensation ramp from the oscillator is subtracted from the error signal for stability of the current feedback
loop. The minimum on time of PFET in PWM mode is 50ns (typ.)
AS1333
SGND PGND
NC
EN
PVIN VDD
SW
FB
3.09V
10 µF
3.3 µH VOUT
VIN
10 µF
ON/OFF
System Controller
C1
C2
L1
3.25V to 5.5V
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AS1333
Datasheet - Detailed Description
8.2 Internal Synchronous Rectifier
To reduce the rectifier forward voltage drop and the associated power loss, the AS1333 uses an internal NFET as a synchronous rectifier. The
big advantage of a synchronous rectification is the higher efficiency in a condition where the output voltage is low compared to the voltage drop
across an ordinary rectifier diode. During the inductor current down slope in the second part of each cycle the synchronous rectifier is turned on.
Before the next cycle the synchronous rectifier is turned off.
There is no need for an external diode because the NFET is conducting through its intrinsic body diode during the transient intervals before it
turns on.
8.3 Shutdown Mode
If EN is set to high (>1.2V) the AS1333 is in normal operation mode. During power-up and when the power supply is less than 2.7V minimum
operating voltage, the chip should be turned off by setting EN low. In shutdown mode the following blocks of the AS1333 are turned off, PFET
switch, NFET synchronous rectifier, reference voltage source, control and bias circuitry. The AS1333 is designed for compact portable
applications, such as mobile phones where the system controller controls operation mode for maximizing battery life and requirements for small
package size outweigh the additional size required for inclusion of UVLO (Under Voltage Lock-Out) circuitry.
Note: Setting the EN digital pin low (<0.5V) places the AS1333 in a 0.01µA (typ.) shutdown mode.
8.4 Thermal Overload Protection
To prevent the AS1333 from short-term misuse and overload conditions the chip includes a thermal overload protection. To block the normal
operation mode the device is turning the PFET and the NFET off in PWM mode as soon as the junction temperature exceeds 150°C. To resume
the normal operation the temperature has to drop below 140°C.
Note: Continuing operation in thermal overload conditions may damage the device and is consid ered bad practice.
8.5 Current Limiting For Protection
If in the PWM mode the cycle-by-cycle current limit of 1200mA (max.) is reached the current limit feature takes place and protect the device and
the external components. A timed current limiting mode is working when a load pulls the output voltage down to approximately 0.375V. In this
timed current limit mode the inductor current is forced to ramp down to a safe value. This is achieved by turning off the internal PFET switch and
delaying the start of the next cycle for 3.5us. The synchronous rectifier is also turned off in the timed current limit mode.
The advantage of the timed current limit mode is to prevent the device from the loss of the current control.
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AS1333
Datasheet - Application Inform ation
9 Application Information
9.1 Inductor Selection
For the external inductor, a 3.3µH inductor is recommended. Minimum inductor size is dependant on the desired efficiency and output current.
Inductors with low core losses and small DCR at 2MHz are recommended.
9.2 Capacitor Selection
A 10µF capacitor is recommended for CIN as well as a 10µF for COUT. Small-sized X5R or X7R ceramic capacitors are recommended as they
retain capacitance over wide ranges of voltages and temperatures.
9.2.1 Input and Output Capacitor Selection
Low ESR input capacitors reduce input switching noise and reduce the peak current drawn from the battery. Also low ESR capacitors should be
used to minimize VOUT ripple. Multi-layer ceramic capacitors are recommended since they have extremely low ESR and are available in small
footprints.
For input decoupling the ceramic capacitor should be located as close to the device as practical. A 4.7µF input capacitor is sufficient for most
applications. Larger values may be used without limitations.
A 2.2µF to 10µF output ceramic capacitor is sufficient for most applications. Larger values up to 22µF may be used to obtain extremely low out-
put voltage ripple and improve transient response.
9.3 EN Pin Control
Drive the EN pin using the system controller to turn the AS1333 ON and OFF. Use a comparator , Schmidt trigger or logic gate to drive the EN pin.
Set EN high (>1.2V) for normal operation and low (<0.5V) for a 0.01µA (typ.) shutdown mode. Set EN low to turn off the AS1333 during power-
up and under voltage conditions when the power supply is less than the 2.7V minimum operating voltage. The part is out of regulation when the
input voltage is less than 2.7V.
Table 5. Recommended Inductor
Part Number LDCR Current Rating Dimensions (L/W/T) Manufacturer
LPS4018-222ML_ 2.2µH 0.070Ω 2.9A 3.9x3.9x1.7mm Coilcraft
www.coilcraft.com
LPS4018-332ML_ 3.3µH 0.080Ω 2.4A 3.9x3.9x1.7mm
LPS4018-472ML_ 4.7µH 0.125Ω 1.9A 3.9x3.9x1.7mm
Table 6. Recommended Input and Output Capacitor
Part Number CTC Code Rated Voltage Dimensions (L/W/T) Manufacturer
GRM188R60J475KE19 4.7µF X5R 6.3V 0603 Murata
www.murata.com
GRM219R60J475KE19 4.7µF X5R 6.3V 0805
GRM21BR61C475KA88 4.7µF X5R 16V 0805
GRM31CR71E475KA88 4.7µF X7R 25V 1206
GRM188R60J106ME47 10µF X5R 6.3V 0603
GRM21BR60J106KE19 10µF X5R 6.3V 0805
GRM21BR61A106KE19 10µF X5R 10V 0805
GRM32DR71C106KA01 10µF X7R 16V 1210
GRM21BR60J226ME39 22µF X5R 6.3V 0805
GRM32ER71A226KE20 22µF X7R 10V 1210
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AS1333
Datasheet - Application Inform ation
9.4 Layout Considerations
The AS1333 converts higher input voltage to lower output voltage with high efficiency. This is achieved with an inductor-based switching
topology. During the first half of the switching cycle, the internal PMOS switch turns on, the input voltage is applied to the inductor, and the
current flows from PVDD line to the output capacitor (C2) through the inductor . During the second half cycle, the PMOS turns off and the internal
NMOS turns on. The inductor current continues to flow via the inductor from the device PGND line to the output capacitor (C2). Referring to
Figure 24, the AS1333 has two major current loops where pulse and ripple current flow. The loop shown in the left hand side is most important,
because pulse current shown in Figure 24 flows in this path. The right hand side is next. The current waveform in this path is triangular , as shown
in Figure 24. Pulse current has many high-frequency components due to fast di/dt. Triangular ripple current also has wide high-frequency
components. Board layout and circuit pattern design of these two loops are the key factors for reducing noise radiation and stable operation.
Other lines, such as from battery to C1(+) and C2(+) to load, are almost DC current, so it is not necessary to take so much care. Only pattern
width (current capability) and DCR drop considerations are needed.
Figure 24. Current Loop
PGND AGND
NC
EN
PVIN VDD
SW
FB
3.09V
10 µF
3.3 µH VOUT
3.25V to 5.5V
VIN
10 µF
C1
+
-
C2 +
-
L1
i
fOSC = 2MHz
i
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AS1333
Datasheet - Ordering Information
11 Ordering Information
The device is available as the standard products listed below.
Note: All products are RoHS compliant and austriamicrosystems green.
Buy our products or get free samples online at ICdirect: http://www.austriamicrosystems.com/ICdirect
Technical Support is found at http://www.austriamicrosystems.com/Technical-Support
For further information and requests, please contact us mailto:sales@austriamicrosystems.com
or find your local distributor at http://www.austriamicrosystems.com/distributor
Table 7. Ordering Information
Ordering Code Marking Description Delivery Form Package
AS1333-BWLT ASQX 650mA, DC-DC Step-Down for RF Tape and Reel 8-pin WL-CSP
www.austriamicrosystems.com/DC-DC_Step-Down/AS1333 Revision 1.06 17 - 17
AS1333
Datasheet
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All rights reserved. The material herein may not be reproduced, adapted, merged, translated, stored, or used without the prior written consent of
the copyright owner.
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Devices sold by austriamicrosystems AG are covered by the warranty and patent indemnification provisions appearing in its Term of Sale.
austriamicrosystems AG makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding
the freedom of the described devices from patent infringement. austriamicrosystems AG reserves the right to change specifications and prices at
any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check with austriamicrosystems AG for
current information. This product is intended for use in normal commercial applications. Applications requiring extended temperature range,
unusual environmental requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment are
specifically not recommended without additional processing by austriamicrosystems AG for each application. For shipments of less than 100
parts the manufacturing flow might show deviations from the standard production flow, such as test flow or test location.
The information furnished here by austriamicrosystems AG is believed to be correct and accurate. However, austriamicrosystems AG shall not
be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use,
interruption of business or indirect, special, incidental or consequential damages, of any kind, in connection with or arising out of the furnishing,
performance or use of the technical data herein. No obligation or liability to recipient or any third party shall arise or flow out of
austriamicrosystems AG rendering of technical or other services.
Contact Information
Headquarters
austriamicrosyste ms AG
Tobelbaderstrasse 30
A-8141 Unterpremstaetten, Austria
Tel: +43 (0) 3136 500 0
Fax: +43 (0) 3136 525 01
For Sales Offices, Distributors and Representa tive s, plea se vis it:
http://www.austriamicrosystems.com/contact
