BUK1M200-50SDLD
Quad channel TOPFET™
Rev. 01 — 02 April 2003 Product data
1. Product profile
1.1 Description
Quad temperature and overload protected logic level power MOSFET in TOPFET™
technology in a 20-pin surface mount plastic package.
Product availability:
BUK1M200-50SDLD in SOT163-1 (SO20).
1.2 Features
1.3 Applications
1.4 Quick reference data
[1] All devices active
■Power TrenchMOS™ ■5 V logic compatible input level
■Overtemperature protection ■Current limiting
■Overload protection ■ESD protection for all pins
■Input-source voltage resets latched
protection circuitry. ■Overfatigue clamping for turn off of
inductive loads
■Input used to control output stage and
supply overload protection circuits ■Low operating input current permits
direct drive by micro-controller.
■Low-side driver ■DC switching
■Low frequency Pulse Width
Modulation ■General purpose switch for driving
lamps, motors, solenoids and heaters.
Table 1: Quick reference data
Symbol Parameter Min Max Unit
RDSon drain-source on-state resistance - 200 mΩ
Ptot total power dissipation [1] - 9.4 W
Tjjunction temperature - 150 °C
VDS drain-source voltage - 50 V
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 2 of 14
9397 750 10956 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
2. Pinning information
2.1 Pin description
Fig 1. Pinning; SOT163-1 (SO20). Fig 2. Symbol; Quad channel low-side TOPFETTM
d
book, halfpage
20
Top view
MGX361
11
110
MBL801
P
D4I4
S4
P
D3I3
S3
P
D2I2
S2
P
D1I1
S1
Table 2: Pin description
Symbol Pin Description
n.c. 1, 11, 10, 20 not connected
D1 2,19 drain 1
I1 3 input 1
D2 4,17 drain 2
I2 5 input 2
D3 6,15 drain 3
I3 7 input 3
D4 8, 13 drain 4
I4 9 input 4
S4 12 source 4
S3 14 source 3
S2 16 source 2
S1 18 source 1
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 3 of 14
9397 750 10956 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3. Block diagram
Fig 3. Elements of the quad channel TOPFET switch.
OVER
VOLTAGE
D1
S1
VOLTAGE
REGULATOR
gate sense
I1 RIG
D2
S2
I2
CHANNEL 1
CHANNEL 2
internal circuitry
identical to
CHANNEL1
D3
S3
I3
CHANNEL 3
internal circuitry
identical to
CHANNEL1
D4
S4
I4
CHANNEL 4
internal circuitry
identical to
CHANNEL1
CONTROL
LOGIC
OVER
TEMPERATURE
SHORT CIRCUIT
PROTECTION CROWBAR
AND
CURRENT
LIMIT
03pb05
BUK1M200-50SDLD
9
7
5
3
12
8,13
14
6,15
16
4,17
18
2,19
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 4 of 14
9397 750 10956 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4. Limiting values
[1] Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
[2] For all devices active.
[3] Not in an overload condition with drain current limiting.
[4] At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
[5] Single active device.
[6] With the protection supply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by
means of drain current limiting and by activating the overtemperature protection.
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage [1] -50V
IIinput current clamping - 3 mA
Ptot total power dissipation Tsp ≤25 °C; Figure 4 [2] - 9.4 W
IIMS non-repetitive peak input current tp≤1 ms - 10 mA
Tstg storage temperature −55 +150 °C
Tjjunction temperature normal operation [3] - 150 °C
Overvoltage clamping [4]
EDS(CL)S non-repetitive drain-source
clamping energy Tamb =25°C; IDM ≤ID(lim) (refer to Table 5);
inductive load [5] - 100 mJ
EDS(CL)R repetitive drain-source clamping
energy Tsp ≤125 °C; IDM = 50 mA; f = 250 Hz [5] -5mJ
Overload protection [6]
VDS(prot) protected drain-source voltage VIS ≥4V - 35 V
Reverse diode
ISsource (diode forward) current Tsp ≤25 °C; VIS =0V - 2 A
Electrostatic discharge
Vesd electrostatic discharge voltage C = 250 pF; R = 1.5 kΩ-2kV
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 5 of 14
9397 750 10956 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5. Thermal characteristics
Fig 4. Normalized total power dissipation as a function of solder point temperature.
03aa17
0
40
80
120
0 50 100 150 200
(%)
Tsp (°C)
Pder
Pder Ptot
Ptot 25 C
°
()
----------------------- 100%×=
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance from junction to
solder point. mounted on thermo clad board
one device active - - 45 K/W
all devices active - - 13.3 K/W
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 6 of 14
9397 750 10956 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
6. Static characteristics
[1] The supply for the logic and overload protection is taken from the input.
[2] The input voltage below which the overload protection circuits will be reset.
[3] Not directly measurable from the device terminals.
Table 5: Static characteristics
Limits are valid for
−
40
°
C
≤
T
sp
≤
+150
°
C and typical values for T
sp
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Off-state output characteristics
VDS(CL) drain-source clamping voltage VIS =0V; I
D=10mA 50 - - V
VIS =0V; I
D= 200 mA; tp≤300 µs;
δ≤0.01; Figure 16 50 62 70 V
IDSS drain-source leakage current VIS =0V; V
DS =40V - - 100 µA
Tsp =25°C; Figure 17 - 0.05 10 µA
On-state output characteristic
RDSon drain-source on-state resistance VIS ≥4 V; tp≤300 µs; δ≤0.01;
ID= 100 mA; Figure 5 and 6- - 380 mΩ
Tsp =25°C - 150 200 mΩ
Input characteristics [1]
VIS(th) input-source threshold voltage VDS =5V;I
D= 1 mA 0.6 - 2.4 V
Tsp =25C;Figure 10 1.1 1.6 2.1 V
IIS input-source current normal operation
VIS = 5 V 100 220 400 µA
VIS = 4 V 80 195 330 µA
protection latched
VIS = 5 V 200 400 650 µA
VIS =3V;Figure 11 and 12 130 250 430 µA
VIS(rst) input-source reset voltage trst ≥100 µs; Figure 15 [2] 1.5 2 2.9 V
trst(latch) latch reset time [6] 10 40 100 µs
VIS(CL) input-source clamping voltage II= 1.5 mA; Figure 16 5.5 - 8.5 V
RIG input-gate resistance [3] -33-kΩ
Overload protection characteristic [4]
ID(lim) drain current limiting VIS =5V;Figure 18 0.8 1.3 1.7 A
VIS = 4.5 V 0.7 - - A
4V≤VIS ≤5.5 V; 0.6 - 1.8 A
Short circuit load protection characteristics
POV(th) overload power threshold VIS =5V [5] -17-W
Td(sc) short circuit response time VIS =5V;Figure 14 [7] - 1.6 - ms
Overtemperature protection characteristic
Tj(th) threshold junction temperature 4 V ≤VIS ≤5.5 V; ID≥280 mA or
VDS ≥100 mV; Figure 9 150 165 - °C
Source-drain diode characteristic
VSD source-drain (diode forward)
voltage IS= 2 A; VIS =0V; t
p= 300 µs - 0.83 1.1 V
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 7 of 14
9397 750 10956 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
[4] The TOPFET switches off to protect itself when one of the overload thresholds is exceeded. It remains latched off until reset by the
input.
[5] Power threshold for protection to operate.
[6] To reset the latched state, the input-source voltage is reduced from 5 V to 1 V.
[7] Trip time t(trip) varies with overload dissipation POV according to the formula t(trip) =t
d(sc) /[P
OV /P
OV(th) -1]
Tj=25°C; ID= 100 mA; tp= 300 µs
Fig 5. Normalized drain-source on-state resistance
factor as a function of junction temperature. Fig 6. Drain-source on-state resistance as a function
of input-source voltage; typical values.
Tj=25°C; tp= 300 µsT
j=25°C; VDS = 10 V; tp= 300 µs
Fig 7. Output characteristics; drain current as a
function of drain-source voltage; typical values. Fig 8. Transfer characteristics; drain current as a
function of input-source voltage; typical values.
03pa71
0
0.5
1
1.5
2
2.5
-50 0 50 100 150
Tj (°C)
a
03pa73
0
125
250
375
500
02468
VIS (V)
RDSon
(mΩ)
aRDSon
RDSon 25°C()
------------------------------
=
03pa74
0
0.4
0.8
1.2
1.6
0 102030
VDS (V)
ID
(A)
VIS = 7 V
6 V
5 V
4 V
03pa75
0
0.6
1.2
1.8
02468
VIS (V)
ID
(A)
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 8 of 14
9397 750 10956 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
ID= mA; VDS =5V
Fig 9. Overtemperature protection characteristic;
threshold junction temperature as a function of
input-source voltage; typical values.
Fig 10. Input-source threshold voltage as a function of
junction temperature.
Tj=25°C
(1) Protection latched.
(2) Normal operation.
Tj=25°C
Fig 11. Input-source current as a function of
input-source voltage; typical values. Fig 12. Input clamping characteristic; input current as
a function of input-source voltage; typical
values.
03pa76
160
170
180
190
200
0246810
VIS (V)
Tj(th)
(°C)
03pa77
0
0.5
1
1.5
2
2.5
-50 0 50 100 150
Tj (°C)
VIS(th)
(V)
min.
typ.
max.
03pa78
0
0.2
0.4
0.6
0.8
1
02468
VIS (V)
IIS
(mA)
(2)
(1)
03pa79
0
2
4
6
8
10
02468
VIS (V)
II
(mA)
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 9 of 14
9397 750 10956 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
(1) VIS = 5 V; device in latched mode.
(2) VIS = 3 V; device in latched mode.
(3) VIS = 5 V; device in normal mode.
(4) VIS = 4 V; device in normal mode.
VIS ≥4 V; Tj≤125 °C
Fig 13. Input-source current as a function of junction
temperature; typical values. Fig 14. Reciprocal of short circuit response time as a
function of total overload power; single device
dissipating; typical values
tr= 100 µsV
IS =0V; t
p= 300 µs
Fig 15. Input-source reset voltage as a function of
junction temperature; typical values. Fig 16. Overvoltage clamping characteristic; drain
current as a function of drain-source voltage;
typical values.
03pa80
0
100
200
300
400
500
−50 0 50 100 150
IIS
(mA)
Tj (°C)
(1)
(2)
(3)
(4)
03pa81
0
1000
2000
3000
4000
0 5.5 11 16.5 22
POV (W)
1 / td(sc)
(s-1)
03pa82
1.8
2
2.2
2.4
-50 20 90 160
Tj (°C)
VIS(rst)
(V)
03pa83
0
100
200
300
400
57 59 61 63 65 67
VDS (V)
ID
(mA)
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 10 of 14
9397 750 10956 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
7. Dynamic characteristics
VDS =40V; V
IS =0V VIS =5V
Fig 17. Drain-source leakage current as a function of
junction temperature; typical values. Fig 18. Drain current limiting as a function of solder
point temperature.
03pa84
10-8
10-7
10-6
10-5
-50 0 50 100 150
Tj (°C)
IDSS
(A)
03pa72
1.8
1.2
0.6
00 40 80 120 160
Tsp (°C)
ID
(A)
max.
typ.
min.
Table 6: Switching characteristics
Symbol Parameter Conditions Min Typ Max Unit
Turn-on measured from the input going HIGH
td(on) turn-on delay time RL=50Ω; ID= 250 mA; VIS =5V;
Figure 19 and 20; Tsp =25°C-512µs
trrise time - 11 30 µs
td(off) turn-off delay time - 25 65 µs
tffall time -1435µs
Fig 19. Test circuit for resistive load switching times. Fig 20. Resistive load switching waveforms.
RL
VIS
VDD
VDS
MBL853
P
VIS
VDS
td(on) td(off)
10%
90%
10%
90%
tftr
MBL854
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 11 of 14
9397 750 10956 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
8. Package outline
Fig 21. SOT163-1.
UNIT A
max. A1A2A3bpcD
(1) E(1) (1)
eH
ELL
pQZ
ywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm
inches
2.65 0.30
0.10 2.45
2.25 0.49
0.36 0.32
0.23 13.0
12.6 7.6
7.4 1.27 10.65
10.00 1.1
1.0 0.9
0.4 8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
1.1
0.4
SOT163-1
10
20
wM
bp
detail X
Z
e
11
1
D
y
0.25
075E04 MS-013
pin 1 index
0.10 0.012
0.004 0.096
0.089 0.019
0.014 0.013
0.009 0.51
0.49 0.30
0.29 0.050
1.4
0.055
0.419
0.394 0.043
0.039 0.035
0.016
0.01
0.25
0.01 0.004
0.043
0.016
0.01
0 5 10 mm
scale
X
θ
A
A1
A2
HE
Lp
Q
E
c
L
vMA
(A )
3
A
SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1
97-05-22
99-12-27
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 12 of 14
9397 750 10956 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9. Revision history
Table 7: Revision history
Rev Date CPCN Description
01 20030402 - Product datasheet (9397 750 10956)
9397 750 10956
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 02 April 2003 13 of 14
9397 750 10956
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 02 April 2003 13 of 14
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.Fax: +31 40 27 24825
10. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
13. Trademarks
TOPFET — is a trademark of Koninklijke Philips Electronics N.V.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Level Data sheet status[1] Product status[2][3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 02 April 2003 Document order number: 9397 750 10956
Contents
Philips Semiconductors BUK1M200-50SDLD
Quad channel TOPFET™
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
2.1 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
3 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
6 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
7 Dynamic characteristics . . . . . . . . . . . . . . . . . 10
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
10 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 13
11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
