BAS40 BAS40-04 BAS40-05 BAS40-06 SILICON PLANAR SCHOTTKY DIODE Pin Configuration: 1. ANODE 2. CATHODE 3. ANODE/CATHODE Pin Configuration: 1. ANODE 2. NC 3. CATHODE Pin Configuration: 1. ANODE 2. ANODE 3. CATHODE Pin Configuration: 1. CATHODE 2. CATHODE 3. ANODE Unit: inch (mm) SOT-23 SMD Package General Purpose Schottky Diode for High Speed switching Absolute Maximum Ratings (per diode) DESCRIPTION Reverse Voltage SYMBOL VALUE UNITS VR 40 V mA IF 120 IFSM 200 mA Power Dissipation Ta = 25 C PD 250 mW Storage Temperature Range Tstg - 55 to +150 Tj 150 Rth(j-a)* 430 Forward Current Surge Forward Current t=10ms o Junction Temperature Thermal Resistance From junction to ambient o C K/W *Mounted on a ceramic substrate of 10mm x 8mm x 0.6mm Electrical Characteristics (Ta=25 oC unless otherwise specified) (per diode) DESCRIPTION Reverse Braekdown Voltage Reverse Current SYMBOL TEST CONDITION IR = 10uA VR IR Forward Voltage VF Diode Capacitance www.rectron.com CT MIN MAX UNITS V 40 VR = 30V 1 VR = 40V 10 IF = 1mA 0.38 IF = 10mA 0.50 IF = 40mA 1.00 VR = 40V 5.00 uA V pF 1 of 1