Po Discrete POWER & Signal FAIRCHILD Technologies ee SEMICONDUCTOR MPSH81 MMBTH81 SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maxi mum Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units VcEo Collector-Emitter Voltage 20 Vv Voso Collector-Base Voltage 20 Vv Veo Emitter-Base Voltage 3.0 Vv Io Collector Current - Continuous 50 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPSH81 *MMBTH81 Pp Total Device Dissipation 350 225 mW Derate above 25C 2.8 1.8 mW/C Reuc Thermal Resistance, Junction to Case 125 C/W Rega Thermal Resistance, Junction to Ambient 357 556 C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." H81, Rev B 1997 Fairchild Semiconductor Corporation LSHLEWI / LSHSdINElectrical Characteristics TA = 25C unless otherwise noted PNP RF Transistor (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vipryceo Collector-Emitter Breakdown Voltage* | Ip = 1.0 mA, lz =0 20 Vv Vipryco Collector-Base Breakdown Voltage lo = 10 pA, Ie = 0 20 Vv VieR)EBO Emitter-Base Breakdown Voltage le=10pA, Io =0 3.0 Vv leso Collector Cutoff Current Vop = 10 V, le =O 100 nA leBo Emitter Cutoff Current Vep=2.0V, I> =O 100 nA ON CHARACTERISTICS Hee DC Current Gain Io = 5.0 mA, Vog = 10 V 60 VeeEsat) Collector-Emitter Saturation Voltage Ip = 5.0 mA, Ip = 0.5 MA 0.5 Vv Veeon) Base-Emitter On Voltage Ilo = 5.0 MA, Voce = 10V 0.9 Vv SMALL SIGNAL CHARACTERISTICS fr Current Gain - Bandwidth Product Ilo = 5.0 MA, Voge = 10 V, 600 MHz f = 100 MHz Cob Collector-Base Capacitance Vop = 10 V, le = 0, f = 1.0 MHz 0.85 pF Coe Collector Emitter Capcitance Vop = 10 V, Ip = 0, f = 1.0 MHz 0.65 pF * Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% DC Typical Characteristics hee DC CURRENT GAIN 200 180 160 140 120 100 80 60 40 20 -0.1 -1 DC Current Gain vs. Collector Current T, = 125C Tq = 25C T, = 85C -10 Vee = 1V -100 Ic COLLECTOR CURRENT (mA) -0.1 0.05 -0.02 -0.01 Vceisat) COLLECTOR SATURATION VOLTAGE (Vv) -1.0 Collector Saturation Voltage vs. Collector Current =101pg Ta = 125C Ta = -55C -10 ~100 Ic COLLECTOR CURRENT (mA) LSHLEWI / LSHSdINPNP RF Transistor (continued) DC Typical Characteristics (continued) Base-Emitter Saturation Voltage vs. Collector Current -1.5 Ic = 10 lg -13 -11 Ty, = -55C -0.9 Ta = 25C -0.7 | Ta = 125C -0.5 -0.1 -1.0 -10 -100 ic - COLLECTOR CURRENT (mA) Vecisat: ~ BASE-EMITTER SATURATION VOLTAGE (V) Vecion; BASE-EMITTER ON VOLTAGE (V) Base-Emitter ON Voltage vs. Collector Current 1.0 ce = 10V 0.8 0.6 0.4 0.2 0 -0.1 Ta = 25C -1.0 Ta = 100C -10 -100 Ic - COLLECTOR CURRENT (mA) Collector Reverse Current 100 18 0.1 Vee = -3.0V Ices COLLECTOR REVERSE CURRENT (nA) 0.01 25 50 75 100 vs. Ambient Temperature 125-150 T, AMBIENT TEMPERATURE (C) LSHLEWI / LSHSdINPNP RF Transistor (continued) AC Typical Characteristics Input / Output Capacitance vs. Reverse Bias Voltage F=1MHz Cobo le =0 CAPACITANCE (pF) 0 -20 -40 -6.0 -80 -10 REVERSE BIAS VOLTAGE (V) Contours of Constant Gain Bandwidth Product (f,) -14 1500 MHz 500 Miz 500 - MHz Hz MHz Voce COLLECTOR VOLTAGE (V} -1.0 -10 Ic - COLLECTOR CURRENT (mA) -100 POWER DISSIPATION vs AMBIENT TEMPERATURE P, - POWER DISSIPATION (mW) 2 oa 8S & $ & oO oO oO oO oO oO oO oO 0 25 50 75 100 TEMPERATURE (C) 125 150 LSHLEWI / LSHSdIN