DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2 1 of 7
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DMN2300UFD
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) Max ID max
TA = 25°C
(Notes 4)
20V
200mΩ @ VGS = 4.5V 1.73A
260mΩ @ VGS = 2.5V 1.50A
400mΩ @ VGS = 1.8V 1.27A
500mΩ @ VGS = 1.5V 1.15A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
Features and Benefits
• Low Gate Threshold Voltage
• Fast Switching Speed
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2KV
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1212-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ۛ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.005 grams (approximate)
Ordering Information (Note 3)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN2300UFD-7 KS2 7 8 3000
Notes: 1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Equivalent Circuit
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Top View Bottom View Pin-out Top view
X1-DFN1212-3
KS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2 2 of 7
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±8 V
Continuous Drain Current Steady
State
TA = 25°C (Note 4) ID 1.73 A
TA = 85°C (Note 4) 1.34
TA = 25°C (Note 5) 1.21
Pulsed Drain Current (Note 6) IDM 6.0 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 0.96 W
(Note 5) 0.47 W
Thermal Resistance, Junction to Ambient (Note 4) RθJA 130 °C/W
(Note 5) 265 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Same as note 4, except the device is mounted on minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
Thermal Characteristics
0
1
2
3
4
5
6
7
8
9
10
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
Single Pulse
R = 136 C/W
θ
JA
°
R (t) = R *r(t)
T - T = P*R
θθ
θ
JA JA
JA JA
P(pk), PEAK TRANSIENT POWER (W)
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi g. 2 SOA, Safe Ope r at ion A rea
0.01
0.1
1
10
I , DRAIN CURRENT (A)
D
0.001
I(A) @P=10s
DW
I(A) @ DC
D
I(A) @P=1s
DW
I(A) @P=100ms
DW
I(A) @P=10ms
DW
T = 150 C
T= 25C
Single Pulse
J(MAX)
A
°
°
R
Limited
DS(ON)
I(A) @P=1ms
DW
I(A) @
P =10µs
D
W
I(A) @P=100µs
DW
DMN2300UFD
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0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURA TION TIMES (sec)
Fig. 3 Transient Thermal Resistance
0.000001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
R (t) = r(t) * R
θθ
JA JA
R = 136°C/W
Duty Cycle, D = t1/ t2
θ
JA
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 20 - - V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1 μA VDS = 20V, VGS = 0V
Gate-Source Leakage IGSS - - ±10
μA VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
0.45 - 0.95 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS (ON) - -
200
mΩ
VGS = 4.5V, ID = 900mA
260 VGS = 2.5V, ID = 800mA
400 VGS = 1.8V, ID = 700mA
500 VGS = 1.5V, ID = 200mA
Forward Transfer Admittance |Yfs| 40 - - mS
VDS = 3V, ID = 300mA
Diode Forward Voltage VSD - 0.7 1.2 V
VGS = 0V, IS = 300mA
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss - 67.62 - pF VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 9.74 - pF
Reverse Transfer Capacitance Crss - 7.58 - pF
Gate Resistance R
g
- 68.51 - Ω VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (Note 8) Q
g
- 0.89 2 nC VGS = 4.5V, VDS = 15V,
ID = 1A
Gate-Source Charge Q
g
s - 0.14 - nC
Gate-Drain Charge Q
g
d - 0.16 - nC
Turn-On Delay Time tD
(
on
)
- 4.92 - ns VDS = 10V, ID = 1A
VGS = 10V, RG = 6Ω
Turn-On Rise Time t
- 6.93 - ns
Turn-Off Delay Time tD
(
off
)
- 21.71 - ns
Turn-Off Fall Time tf - 10.62 - ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guarantee by design.
DMN2300UFD
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012 345
Fig . 4 Ty pical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
0.5
1.0
1.5
2.0
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 1.2V
GS
V = 1.5V
GS
V = 1.8V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
0
0.5
1.0
1.5
2.0
0 0.5 1 1.5 2 2.5 3
Fig. 5 Typical Transfer Characteristic
V , GATE-SOURCE VOLT AGE (V)
GS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0 0.4 0.8 1.2 1.6 2
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
0
0.2
0.4
0.6
0.8
1
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
V = 1.5V
GS
I , DRAIN CURRENT (A)
D
Fig. 7 Typical On-Resistance
vs . Drain Cu r re nt and Temperature
R
, D
R
A
IN-
S
OU
R
C
E
ON-
R
E
S
I
S
T
A
N
C
E
()
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
00.20.40.60.81
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
I , DRAIN CURRENT (A)
D
Fig. 8 Typical On-Resistance
vs . Dr ai n Curre nt and Tem perature
R
, D
R
AI
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
()
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.2 0.4 0.6 0.8 1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 1.8V
GS
I , DRAIN CURRENT (A)
D
Fig. 9 Typical On-Resistance
vs . Drain Cu r re nt and Temperature
R
, D
R
A
IN-
S
OU
R
C
E
ON-
R
E
S
I
S
T
A
N
C
E
()
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
00.20.40.60.81
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 1.5V
GS
DMN2300UFD
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Fig. 10 On-Resistance V ariation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
R , DRAIN-SOURCE
ON-RESIST ANCE (NORMALIZED)
DSON
0.5
0.7
0.9
1.1
1.3
1.5
1.
7
V = 1.8V
I = 100mA
GS
D
V = 4.5V
I = 1.0A
GS
D
V = 1.5V
I = 50mA
GS
D
V = 2.5V
I = 500mA
GS
D
Fig. 11 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
V = 1.5V
I = 50mA
GS
D
V = 1.8V
I = 100mA
GS
D
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
Fig. 12 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.
2
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 13 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOL TAGE (V)
SD
0
0.4
0.8
1.2
1.6
2.0
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T = 25°C
A
2 4 6 8 10 12 14 16 18 20
1
10
100
1,000
I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
Fig. 14 Typical Leakage Current
vs. D r ai n- Source Voltage
V , DRAIN-SOURCE VOLT AGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = -55°C
A
1
10
100
1,000
10,000
100,000
2 4 6 8 10 12
V , GA TE-SOURCE VOL TAGE (V)
GS
Fig.1 5 Leakag e Current vs. Ga t e- Source Voltage
I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
GSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2 6 of 7
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0
2
4
6
8
0 0.5 1 1.5 2 2.5 3
Fig. 16 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = 15V
I = 1A
DS
D
Package Outline Dimensions
Suggested Pad Layout
X1-DFN1212-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.02
A3 - - 0.13
b 0.27 0.37 0.32
b1 0.17 0.27 0.22
D 1.15 1.25 1.20
E 1.15 1.25 1.20
e - - 0.80
L 0.25 0.35 0.30
All Dimensions in mm
Dimensions Value (in mm)
C 0.80
X 0.42
X1 0.32
Y 0.50
Y1 0.50
Y2 1.50
A1
A3
D
e
E
b
A
b1
(2x)
L
Y2
X
X1
(2x)
Y
Y1
(2x)
C
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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