Oh DE pp3erscee o017393 5 i 3875081 GE SOLID STATE O1E 17393 D T-3PR-~/5 Fite Number 1141 Silicon N-P-N + Epitaxial-Base High-Power Transistors Rugged, Broadly Applicable Devices For Industrial and Commercial Use Features: s High dissipation capability Low saturation voltages = Maximum safe-area-of-operation curves & High gain at high current . The RCA-2N5629, 2N5630 and 2N5631 are epitaxial-base silicon n-p-n transistors Intended for a wide variety of high- power, high-current applications, such as power-switching _ Circults, driver and output stages for series and shunt regulators, dce-to-dce converters, inverters, and solenoid (hammer)/relay drivers. These devices differ in maximum voltage ratings. They are supplied in JEDEC TO-204AA hermetic steel packages. MAXIMUM RATINGS, Absolute-Maximum Values: At Te S 28C. sesneeveseer seneeae borseeenvoncs sanees tenet At Te > 26C "Ta Targeccsecaes * . Tr at 1/16 1/32 In, (1.58 In accordance with JEDEC registration data. General-Purpose Power Transistors 2N5629, 2N5630, 2N5631 } TERMINAL DESIGNATIONS EN (FLANGE) S2CS-27516 JEDEC TO-204AA derate linearly CASE TEMPERATURE [Te] C | { TALS rege Fig, 1 ~ Current derating curve for all types. 2N5629 100 100 2N5630 2N65631 120 140 Vv 120 140 Vv 7 v 16 A 20 A 5 A 200 ____ Ww 4.14 - WEG -65 10200 ____- C 235 ___ C 397OL DE 387508, OO17354 7 i 3875081 GE SOLID STATE General-Purpose Power Transistors 2N5629, 2N5630, 2N5631 ELECTRICAL CHARACTERISTICS, At Case Temperature Tc = 25C Unless Otherwise Specified O1 17394 0 T33/S TEST CONDITIONS LIMITS rVey N VOLTAGE|CURRENT CHARAC- I TERISTIC Vide Adc 2N5629 2N5630 2N5631 T Voel Veet le [tg | Min.| Max. | Min.) Max. | Min. | Max. 100 }-1.5} | | - 1} -| - -|- * Icex 120 | -1.5] - - - - 1 - - 140 {-1,5) - | - | - | - - |- - tt ona 100 |-1.5] | - | - 5] -| - -|- Tc = 150C 120 }-1.5] - | - | - 7 - - 5; -|- 140 |-1.5] - | - | - | - -|- ~ 5 so; - |/-|o | - 1] -]- -|- *l Ice 60; - | - {0 -|[- - 1 -~{- mA voy - |}-}0 ]-]|- -j- - 1 l tooa} |- | | ~ 1{ ]- |- ae toa} - |- | - | - | - - 1} -]- mA E=0 goa} ~ |- | - | - | - -|- - 1 *I lego - 7}O J|=- | - 1, - 1] - 1] ma , } *| VcEolsus)b | jo2e}o | 100] 120] ~ 140 v | 2|- | ac{- | 25) 100} 20; so | 16] 60 * a nFE 2| {16} - 4] - 4| - 4] - *| Vara 2/- | se} - | - 15} - 15 | ~ 1.5 Vv *| Vae(sat)a -|- |ioe}1 | - 18] - 18] 1.8 Vv * = oe O.1MH2! aqal . | | - | 500 | 500 | - 500 pF - |= j1oeya | - a] - 1] - 1 * Voeg(sat}4 _ _ 16 | 4 _ 2 - 2 - 2 v *lf f0.5MHz] 20{- | 1 |---| 1] - 1] - 1} - MHz *Ingg f=ikHz | 10; | 4 | | 184 - 15] - 16| \Sip tp = 1s nonrep. 30 | - - (6.67 | - 6.67) - 6.67 | A RaJc 10 ]- |10 } | - jos75 4 - |0.875 | - [0.875 Pc/w * In accordance with JEDEC registration data, Vog value, b CAUTION: Sustaining voltage, Vogolsus) MUST NOT BE measured on a curve tracer. Pulsed: pulse duration 300 us. Duty factor 2%. = TO-EMITTEA VOLTAGE (VcE}=2 EI iz fey > ze ig = it e 2 3 Es wd - rc sar)] v [Mee OLLECTOR- TO- EMI 2 4 6 6 COLLECTOR CURRENT (Ic)-A g2cs- 30147 0.01 ! too CURRENTIIgIA gzc5-30146 Fig. 2 Typical de beta characteristics as a function Fig. 3 Typical saturation voltage characteristics of collector current for all types. for ail types.Ol DE 348750481 0017395 4 J \ 3875081 G E SOLID STATE CIE 17395 D T*BR3-/S General-Purpose Power Transistors o6 BASE-TO-EMITTER VOLTAGE (Vgel- Fig, 5 Typical input characteristics for all types. 2N5629, 2N5630, 2N5631 nn @ COLLECTOR CURRENT (I}A CASE TEMPERATURE( Te }* 25C (CURVES MUST GE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) ay La 2 46 ay 2 4 6 Bido| ri 4 6 B8idoo tao COLL ECTOR- TO~EMITTER VOLTAGE Vog)-V 92CM- 31029 Fig. 4 ~ Maximum operating areas for all types { Tot 25C). COLLECTOR TO- EMITTER VOLTAGE (Vocle2V COLLECTOR CURRENT (I)-A 2.2 2.6 o2 0.6 ! L@ Ls 2.2 2.6 BASE-TO-EMITTER VOLTAGE (VprlV g2cs-s0146 BE oacs-s0149 Fig. 6 Typical transfer characteristics for all types. COLLECTOR SUPPLY VOLTAGE (Yicl= 30 19,192" 10 To CASE TEMPERATURE (Tc * e RISE (ty ), STORAGE (t, }, FALL (ty ISWITCHING TIMES =, 2 4 6 COLLECTOR CURRENT (11A 92CS-30158 Fig. 7 Typical saturated-switching times for ail types. | 399 t ay