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HITFETBTS 117
Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
• Thermal Shutdown
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
Product Summary
Drain source voltage V60
V
DS
On-state resistance
R
DS(on) 100 mΩ
ACurrent limit
I
D(lim) 7
Nominal load current A
I
D(ISO) 3.5
Clamping energy mJ
E
AS 1000
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS chip on chip tech-
nology. Fully protected by embedded protected functions.
protection
Overvoltage
Drain
IN
ESD
HITFET
Source
Current
1
3
Over-
protection
temperature Short circuit
protection
+
dv/dt
limitation limitation
Vbb
Short circuit
protection
LOAD
2
Overload
protection
M
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BTS 117
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol UnitValue
Drain source voltage
V
DS 60 V
Drain source voltage for short circuit protection
V
DS(SC) 32
Continuous input current 1)
-0.2V ≤
V
IN ≤ 10V
V
IN < -0.2V or
V
IN > 10V
I
IN
no limit
|
I
IN | ≤ 2
mA
Operating temperature
T
j°C- 40 ... +150
Storage temperature
T
stg - 55 ... +150
Power dissipation
T
C = 25 °C 50 W
P
tot
Unclamped single pulse inductive energy
I
D(ISO) = 3.5 A 1000 mJ
E
AS
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
V
ESD 3000 V
Load dump protection
V
LoadDump2) =
V
A +
V
S
V
IN=low or high;
V
A=13.5 V
td = 400 ms,
R
I = 2 Ω,
I
D=0,5*3.5A
td = 400 ms,
R
I = 2 Ω,
I
D= 3.5A
75
70
V
V
LD
DIN humidity category, DIN 40 040 E
IEC climatic category; DIN IEC 68-1 40/150/56
Thermal resistance
junction - case:
R
thJC 2.5 K/W
75
R
thJA
junction - ambient:
SMD version, device on PCB: 3)
R
thJA 45
1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)
2
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical
without blown air.
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Electrical Characteristics
Parameter Symbol UnitValues
max.typ.min.at Tj=25°C, unless otherwise specified
Characteristics
-Drain source clamp voltage
T
j = - 40 ...+ 150°C,
I
D = 10 mA 73 V
V
DS(AZ) 60
-
I
DSS -Off state drain current
V
DS = 32 V,
T
j = -40...+150 °C,
V
IN = 0 V 5µA
1.7 2.2
V
IN(th) 1.3Input threshold voltage
I
D = 0.7 mA V
30 60 µA
I
IN(1) -
Input current - normal operation,
I
D<
I
D(lim):
V
IN = 10 V 120
Input current - current limitation mode,
I
D=
I
D(lim):
V
IN = 10 V 300
I
IN(2) -
2200
I
IN(3) 800
Input current - after thermal shutdown,
I
D=0 A:
V
IN = 10 V 4000
-
-
-
-
I
IN(H)
500
300
Input holding current after thermal shutdown
T
j = 25 °C
T
j = 150 °C
90
180
120
240
mΩ
R
DS(on)
-
-
On-state resistance
I
D = 3.5 A,
V
IN = 5 V,
T
j = 25 °C
I
D = 3.5 A,
V
IN = 5 V,
T
j = 150 °C
80
160
On-state resistance
I
D = 3.5 A,
V
IN = 10 V,
T
j = 25 °C
I
D = 3.5 A,
V
IN = 10 V,
T
j = 150 °C
100
200
mΩ
R
DS(on)
-
-
-
I
D(ISO) 3.5Nominal load current (ISO 10483)
V
IN = 10 V,
V
DS = 0.5 V,
T
C = 85 °C - A
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Electrical Characteristics
Parameter Symbol Values Unit
at Tj=25°C, unless otherwise specified min. typ. max.
Characteristics
Initial peak short circuit current limit
V
IN = 10 V,
V
DS = 12 V
I
D(SCp) -25 - A
Current limit 1)
V
IN = 10 V,
V
DS = 12 V,
t
m = 350 µs,
T
j = -40...+150 °C
I
D(lim) 710 15
Dynamic Characteristics µs
t
on
Turn-on time
V
IN to 90%
I
D:
R
L = 4.7 Ω,
V
IN = 0 to 10 V,
V
bb = 12 V 40 70-
Turn-off time
V
IN to 10%
I
D:
R
L = 4.7 Ω,
V
IN = 10 to 0 V,
V
bb = 12 V -
t
off 70 150
V/µs
Slew rate on 70 to 50%
V
bb:
R
L = 4.7 Ω,
V
IN = 0 to 10 V,
V
bb = 12 V
-dVDS/dton 31-
Slew rate off 50 to 70%
V
bb:
R
L = 4.7 Ω,
V
IN = 10 to 0 V,
V
bb = 12 V 1 3dVDS/dtoff -
Protection Functions
T
jt °CThermal overload trip temperature 165 -150
E
AS
Unclamped single pulse inductive energy
I
D = 3.5 A,
T
j = 25 °C,
V
bb = 32 V
I
D = 3.5 A,
T
j = 150 °C,
V
bb = 32 V
--
--
--
--
1000
225
mJ
Inverse Diode
V
SD
Inverse diode forward voltage
I
F = 5*3.5A,
t
m = 300 µs,
V
IN = 0 V 1 -- V
1Device switched on into existing short circuit (see diagram Determination of I D(lim). Dependant on the application, these values
might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition
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Block Diagramm
Terms Inductive and overvoltage output clamp
HITFET
IN D
VIN
IDVDS
1
IIN
S
Vbb
RL
2
3HITFET
VZD
S
Short circuit behaviour
VIN
ID
ID(SCp)
t 0 tm t 2
ID(Lim)
t 1
Input circuit (ESD protection)
IN
ESD-ZDI
Source
ESD zener diodes are not designed
for DC current > 2 mA @
V
IN>10V. t0: Turn on into a short circuit
tm: Measurementpoint for
I
D(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level whe
r
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
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On-state resistance
RON = f(Tj); ID=3.5A; VIN=10V
-50 -25 025 50 75 100 °C 150
T
j
0
25
50
75
100
125
150
Ω
200
R
DS(on)
typ.
max.
Maximum allowable power dissipation
Ptot = f(Tc)
020 40 60 80 100 120 °C 150
150
0
5
10
15
20
25
30
35
40
W
50 BTS 117
P
tot
On-state resistance
RON = f(Tj); ID= 3.5A; VIN=5V
-50 -25 025 50 75 100 °C 150
T
j
0
25
50
75
100
125
150
175
200
Ω
250
R
DS(on)
typ.
max.
Typ. input threshold voltage
VIN(th) = f(Tj); ID=0.7A; VDS=12V
-50 -25 025 50 75 100 °C 150
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
2.0
V
IN(th)
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Typ. transfer characteristics
ID = f(VIN); VDS=12V; Tj=25°C
0 1 2 3 4 5 6 V8
V
IN
0
2
4
6
A
10
I
D
Typ. output characteristic
ID = f(VDS); Tj=25°C
Parameter: VIN
0 1 2 3 4 V6
V
DS
0
2
4
6
A
10
I
D
Vin=3V
4V
5V
6V
10V
Transient thermal impedance
ZthJC = f(tP)
Parameter: D=tP/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2
s
t
P
-2
10
-1
10
0
10
1
10
K/W
R
thJC
0
0.005
0.01
0.02
0.05
0.1
0.2
D=0.5
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Application examples:
Status signal of thermal shutdown by
monitoring input current
D
S
IN
µC Vbb
HITFET
VIN
RSt
VIN
thermal shutdown
∆V
µC
∆V =
R
ST *
I
IN(3)
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Package and ordering code
all dimensions in mm
Ordering code: Q67060-S6500-A3 Orderin
g
Code:
Q67060-S6500-A2
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Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstraße 73,
81541 München
© Siemens AG 1997
All Rights Reserved.
Attention please!
As far as patents or other rights of third parties are concerned, liability is only assumed for components,
not for applications, processes and circuits implemented within components or assemblies.
The information describes a type of component and shall not be considered as warranted characteristics.
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For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
or the Siemens Companies and Representatives worldwide (see address list).
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in question please contact your nearest Siemens Office, Semiconductor Group.
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r
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1)A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of
that device or system.
2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
