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The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
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2SK3136
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-696B (Z)
3rd. Edition
Feb. 1999
Features
• Low on-resistance
RDS(on) =4.5mΩ typ.
• Low drive current
• 4V gate drive device can be driven from 5V source
Outline
TO–220AB
123
1. Gate
2. Drain(Flang
e
3. Source
D
G
S
2SK3136
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 40 V
Gate to source voltage VGSS ±20 V
Drain current ID75 A
Drain peak current ID(pulse) Note 1300 A
Body-drain diode reverse drain current IDR 75 A
Avalanche current IAP Note 350 A
Avalanche energy EAR Note 3333 mJ
Channel dissipation Pch Note 2100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50Ω
2SK3136
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage V(BR)DSS 40——V I
D = 10mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 µAV
GS = ±20V, VDS = 0
Zero gate voltege drain
current IDSS ——10µAV
DS = 40 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1mA, VDS = 10V Note 1
Static drain to source on state RDS(on) — 4.5 5.8 mΩID = 40A, VGS = 10V Note 1
resistance — 6.5 10 mΩID = 40A, VGS = 4V Note 1
Forward transfer admittance |yfs|5080—SI
D = 40A, VDS = 10V Note 1
Input capacitance Ciss — 6800 — pF VDS = 10V
Output capacitance Coss — 1300 — pF VGS = 0
Reverse transfer capacitance Crss — 380 — pF f = 1MHz
Total gate charge Qg — 130 — nc VDD = 25V
Gate to source charge Qgs — 25 — nc VGS = 10V
Gate to drain charge Qgd — 30 — nc ID = 75A
Turn-on delay time td(on) — 60 — ns VGS = 10V, ID = 40A
Rise time tr— 300 — ns RL = 0.75Ω
Turn-off delay time td(off) — 550 — ns
Fall time tf— 400 — ns
Body–drain diode forward
voltage VDF — 1.05 — V IF = 75A, VGS = 0
Body–drain diode reverse
recovery time trr — 90 — ns IF = 75A, VGS = 0
diF/ dt =50A/µs
Note: 1. Pulse test
2SK3136
4
Main Characteristics
200
150
100
050 100 150 200 0.1 0.3 1 310 30 100
100
80
60
40
20
0246810
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25°C
10 µs
100 µs
1 ms
DC Operation
(Tc = 25°C)
Operation in
this area is
limited by R
DS(on)
PW = 10 ms (1 shot)
3.5 V
3 V
50
V = 10 V
GS
5 V
4 V
2.5 V
100
80
60
40
20
012345
Tc = –25°C
25°C
75°C
V = 10 V
Pulse Test
DS
Pulse Test
2SK3136
5
048
12 16 20
20
16
12
8
4
–50 0 50 100 150 200
0
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )
Ω
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
V = 10 V
GS
4 V
Pulse Test
R (m )
Ω
DS(on)
0.5
0.4
0.3
0.2
0.1
Pulse Test
I = 50 A
D
20 A
10 A
130 100
3
100
2
5
1
10 300
20
10
V = 4 V
GS
10 V
Pulse Test
10, 20, 50 A
I = 50 A
D
10, 20 A
0.1 0.3 1 3 10 30 100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25 °C
75 °C
25 °C
V = 10 V
Pulse Test
DS
50
1000
2SK3136
6
0.1 0.3 1 3 10 30 100 01020304050
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80 160 240 320 400
0
1000
100
200
20
10
0.1 0.2 210 100
1000
500
100
200
20
50
10
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
300
20
1
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
100
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 75 A
D
V
GS
V
DS
DD
V = 40 V
25 V
10 V
0.5 5
500
50
50
V = 10 V, V = 30 V
PW = 5 µs, duty < 1 %
GS DD
r
t
d(on)
t
d(off)
t
tf
30000
V = 40 V
25 V
10 V
DD
2SK3136
7
00.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V (V)
SDF
Reverse Drain Current I (A)
F
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
V = 0, –5 V
GS
5 V
10 V
100
80
60
40
20
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50Ω
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
Avalanche Test Circuit Avalanche Waveform
500
400
300
200
100
25 50 75 100 125 150
0
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E (mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
I = 50 A
V = 25 V
duty < 0.1 %
Rg > 50
AP
DD
Ω
2SK3136
8
Vin Monitor
D.U.T.
Vin
10 V
RL
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
tf
Switching Time Test Circuit Waveform
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m
Pulse Width PW (S)
Normalized Transient Thermal Impedance
100 m 1 10
s (t)
γ
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 1.25 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Normalized Transient Thermal Impedance vs. Pulse Width
2SK3136
9
Package Dimensions
0.5 ± 0.1
2.54 ± 0.5
0.76 ± 0.1
14.0 ± 0.5 15.0 ± 0.3
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
10.16 ± 0.2
2.54 ± 0.5
1.26 ± 0.15
4.44 ± 0.2
2.7 MAX
1.5 MAX
11.5 MAX
9.5
8.0
1.27
6.4 +0.2
–0.1
φ 3.6 +0.1
-0.08
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
TO-220AB
Conforms
Conforms
1.8 g
As of January, 2001
Unit: mm
2SK3136
10
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. Hitachi bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact
Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
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5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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