MIL-S-19500/36C Y March 1967 MIL-S-19500/36B MILITARY SPECIFICATION 15 April 1963 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER @ 2 E e A This specification is mandatory for us - 2 af th Manet ments and Agencies of the Departm a =] ta =n f g bi a 1. SCOPE 1.1 Scope. This specification covers the detail requirements for a PNP, germanium, high-power transistor, 7 " Pr-" | Vcpo | Yepo | Yces | Ycgeo | 'E T stg Ww Vdc Vdc | Vac Vde Adc c 50 -80 -40 | -70 -40 5.0 | -65 to +100 1.4 Primary electtical characteristics . (sat) | 6 | OPE IEE CE | ej- | tnfe Vep = -2.0 Vde | Vap = -2.0 Vde | I. = -2.0 Ade | Vor = -14 Vde Lo L Lu LE Ig = -O5 Ade | Igs -2.0 Ade | Ip = -200 mAdc | | Ig = 70.5 Ade Vde C/W kHz Min 40 30 --- ( --- | 5.0 Max 100 --- -0.7 ; 15 | a 4 mmante of th SOCHIG, Of a posal, form a part of this specificatio mo oe. oo ta MILITARY MIL-S-19500 - Semiconductor Devices, General Specification forMIL-S-19500 36C STANDARDS MIL-STD-202 - Test Methods for Electronic and Electrical Component Parts, MIL-STD-750 - Test Methods fur Semiconductor Devices. (Copies cf specifications, standards, drawings, and publications required by suppliers in connection with specific procurement functions should be obtained from the procuring activity or as directed by the contracting officer. ) 3. REQUIREMENTS 3.1 General. Requirements shall be in accordance with MIL-S-19500, and as specified herein, 3.2 Abbreviations, symbols, and definitions, The abbreviations, symbols, and definitions used herein are defined in MIL-S-19500, and as follows: Tmp-- ++ ++ + + Mounting base temperature 3.3 Design, construction, and physical dimensions, The transistor shall be of the design, con- struction, and physical dimensions specified in figure 1. 3.4 Performance characteristics. Performance characteristics shall be as specified in tables IL, i, and mi. 3.5 Marking. The following marking specified in MIL- S- 19500 may be omitted from the body of the transistor at the option of the manufacturer: (a) Country of origin. (b) Manuiacturer's identification. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein. 4,2 Qualification inspection. Qualification inspection shall consist of the examinations and tests specified in tabies I, 0, and Il. 4.3 Quality conformance inspection. Quality conformance inspection shall consist of groups A, B, and C inspections. 4,3,1 Group A inspection, Group A inspection shall consist of the examinations and tests specified in table I, 4,3.2 Group B inspection. Group B inspection shall consist of the examinations and tests specified in table I. 4.3.3 Groun C inspection, Group C inspection shall consist of the examinations and tests specified in table If. This inspection shal} be conducted on the initial lot and thereafter every 6 months during production, 4,3,4 Group B and group C life-test samples. Samples that have been subjected to group B, 340- hours life-test, may be continued on test for 1, 000-hours in order to satisfy group C life-test require- ments. These samples shail be predesignated, and shall remain subjected to the group C 1, 000-hour acceptance evaluation after they have passed the group B, 340-hour acceptance criteria. The cumula- tive total of failures found during 340-hour test and during the subsequent interval up to 1, 000 hours, shall be computed for 1, 000-hour acceptance criteria. Erintiannmal ASS mils dasateMIL -S-19300/36C 4 ww oO jo = DIMENSIONS . 87 NOTES: 1. 2. Metric equivalents (to the nearest .01 mm) are given for general information only and are based upon i inch = 25.4 mm. This dimension should be measured at points .050 (1.27 mm) to .055 (1.40 mm) below seating plane. When gage is not used, measurement will be made at seating plane. Two leads. Collector shall be electrically connected to the case. FIGURE i. Physical dimensions of transistor type 2N297A.MIL-S- 19500/36C TABLE I, Group A inspection ratio | oo MIL-STD-750 ! Limits Examination or test t ns re ae Method | Details LTPD | Symbol | Min | Max | Unit Subgroup 1 5 Visual and mechanical exam- 2071 --- -o- --- --- ination Subgroup 2 5 Breakdown voitage, coliector | 3011 |Bias cond. D; i. =-300 mAdc BVcro | -40 | --- | Vde to emitter Breakdown voltage, collector 3011 [Bias cond. C;Ic= -300mAdc BYVcrs | -70 --- | Vde to emitter Collector to base cutoff cur- 3036 {Bias cond. D; Vcp = -2.0 Vde logo -o- -150 | wAdc rent Collector to base cutoff cur- 3036 [Bias cond. D; Vag = -80 Vde Iopo | 77 -~3,0 mAdc rent Emitter to base cutoff current| 3061 [Bias cond. D; Vig = -40 Vde leno | --7 | -1.0 |mAdc Subgroup 3 5 Forward-currenttransfer ratio 3076 WVog = -2. 0 Vdc; Ic = -0.5 Add fpp 40 100 --- Forward-currenttransferratid 3076 Wop = -2.0Vdc;I=-2.0 Adc ber 30 o-- --- I Collector to emitter voltage | 3071 [Ic = -2.0Adc; Ip = -200 mAdc! Vor'(sat) --- | -0.7 | vae (saturated) | : : Base-emitter voltage ' 3066 {Test cond. A; Ip = -2. OAdc; Vigg (58th, --- | 1.0 | Vde (saturated) fp = -200 mAdc i { Base-emitter voltage 1 3066 [Test cond. B; Vep = -2. 0 Vde; Var coe F -1,5 Vde (nonsaturated) ; Ic = -2,0 Adc J : Subgroup 4 * 15 : | ae j ; Small-signal short-circuit 3301 WoR= -14 Vdc; I= -0. 5 Adc { 5.0 --- | kHz forward-current transfer nfe ratio cutoff frequency \ i High-temperature operation: Tap = + 85 C | | | | Collector to base cutoff 3036 Bias cond. D; Vop = 740 Vde lepo 777 78.0 mAdc current , Low-temperature operation: Tap = 799 C Forward-current transfer 3076 Mop = 2.0 Vde; Ie = -0.5 Ade rr 30 worseTABLE I. Group B inspection MIL-S- 1950036C MIL-STD-750 Limits Examination or test Pr ~ - 1 | max | t a Method | Details LTPD | Symbol | Min Max | Unit T Subgroup 1 | 20 Physical dimensions 2066 lise figure 1) --- --- aoe --- Subgroup 2 | 15 Solderability 2026 \Omit aging --- wee | wee | eee Therma! shock 1051 |Test cond. A oe -o- -e- o-- (temperature cycling) Thermal shock (glass strain) , 1056 res cond. B wee | wee --- --- Terminal strength (tension) 2036 {Test cond. A; weight = 21 --- aoe --- --- bs; time = 15 sec to each rminal | Terminal strength (terminal 2036 Test cond. D1, torque= 6 in.- e- wee pores | oeee torque) oz. ; t= 15 sec to each ter- iminal | Seal (leak-rate) --- [Method 112, MIL-STD-202, wee cee [5x1077) atm est cond, C, procedure I, ! 1 cc/sec test cond. B for gross leaks isture resistance 1021 Omit initial conditioning --- eer tones --- End points: Emitter to base cutoff 3061 Bias cond. D; Ven = -40 Vae leno e=- 1-10 | mAde current Collector to base cutoff 3036 [Bias cond. D; Veg= -80 Vdc lepo )o j-3. 0 mAdc current 1 1 Forward-current transfer 3076 Vop = 72.0 Vac; Ig = -2.0 her 30 eee tosses ratio Adc Subgroup 3 15 Shock 2016 |Nonoperating; 1500 G; 0.5 --- ane --- n+ msec; 5 blows in each orien- tation: X., Y:, Y., and Z, i i a 4 Vibration fatigue 2046 jonoperating --- -+- =-- --- Vibration, variable frequency | 2056 loses roof otee | --- | Constant acceleration 2006 ho, 000 G; in each orientation joono wee |---| oe kK, Yy, Yo) and Z, | | End points: (Same as subgroup 2) | 1 } ! Subgroup 4 | 1: ' ' , | ' ' i | | Salt atmosphere (corrosion) | 104] | --- wer tee tee nd point: (Same as subgroup 2) 3MIL- S- 19500/36C MIL-STD-756 Limits Examination or test I oO _ Method Details LTPD | Symbol! } Min | Max | Unit Subgroup 5 High-temperature life 1031 [Tgp = + 100C; time = 340 --- aes =-- ore (nonoperating) houfs (see 4.3.4) End points: Emitter to base cutoff 3061 (Bias cond, D; Vpp_= -40 Vdc Ippo | 777 -2.0 | mAdc current a Collector to base cutoff 3036 {Bias cond, D; Vep= -80 Vdc lopo | 777 -6.0 | mAdc current Forward-current transfer 3076 Vopr = -2.0Vdc; Ip = -2. Ade hre 22 wee | nee ratio Subgroup 6 Steady state operation life 1026 Vops -20 Vde; Trym = + 85C _ --- _ Py = 10 W; time = 340 hours End points: (see 4.3.4) (Same as subgroup 5) TABLE MW. Group C inspection MIL-STD-750 Limits Examination or test on Method Details LTPD | Symboi Min | Max | Unit Subgroup | Barometric pressure, re- 1001 |Normal mounting; pressure = woe oot --- tal duced {altitude operation) 8 mm Hg for 60 sec min Measurement during test: Collector to base cutoff 3036 |Bias cond. D; Von -80 Vdc IcBo --- -3,0) mAdc current Thermal resistance 3151 By. | wn | 2S C/W Floating potential 3020 |\Vcp= -80 Vdc; voltmeter in- Venr | --- $0.18 | Vde put resistance > 10 megohms Subgroup 2 | = 10 High-temperature life 1031 IT ste = + 100C --- en [cee fore (nonoperating) | (see 4.3.4) | End points: (same as subgroup 5 of group B) \mee el MIL-S- 19500/36C TABLE I. Group C inspeetion - Continued MIL-STD-750 Limits Examination or test Method Details LTPD | Symbol | Min }] Max | Unit Subgroup 3 Az 15 CtaadAy etato oneration life 1036 VA. = -20 Vde: --e =e --- PERE OEE Wp we eewewes aaa oevew CB - ? Twp = 485C; Pep = 10 W Tad aninen: (ema 4.3.4) Gru poinw, \mee 4. (Same as subgroup 5 of group B) 5, PREPARATION FOR DELIVERY 5.1 See MIL-S-18500, section 5. & NOTES 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Changes from previous issue, Asterisks are not used in this revision to identify changes with respect to the previous issue, due to the extensiveness of the changes. Custodians eparing activ Army - EL Army - EL Navy - SH Air Force - ii (Project 5961-0008- 11) Review activities: Army - EL, MU, Mi Navy - SH Air Force - 11, 1%, 85 Code won -1 naeinim nadia amd washhiak 0 ar. Bie Fok AE ee hk ee ed casket en Te ol.FOLO Te Ea eepenene neue OFFICIAL BUSINESS i PENALTY FOR PRIVATE USE 3300 POSTAGE AND FEES PAID i) Commander US Army Electronics Command afer nory on mc _ic ALLNIURORLeRD= lLowd Fort MOnmouth, NJ 07703 FOLDSTANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL QM Ese INSTRUCTIONS: The purpose of this form is to solicit beneficial comments which wil] help achieve procure- ment of suitable products st reasonable cost and minimum delay, or will otherwise enhance use of the document. DoD contractors, government activities, or manufacturers/ vendors who are prospective suppliers of the product ure i ted to submit comments ts the goverment. Foldon lines on reverse side, staple in comer, and send to preparing activity. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. Attach any pertinent date which may be of use in improving this document. If there are additional papers, attach to farm and place both in an envelope addressed to preparing activity. DOCUMENT !DENTIFIER ANDO TITLE NAME OF ORGANIZATION AND ADDRESS CONTRACT NUMBER MATERIAL PROCURED UNDER A \ DIRECT GOVERNMENT CONTRACT SUBCONTRACT ae mw \. HAS ANY PART OF THE DOCUMENT CREATED PROBLEMS OR REQUIRED INTERPRETATION IN PROCUREMENT use? a. GIVE PARAGRAPH NUMBER AND WORDING. B. RECOMMENDATIONS FOR CORRECTING THE DEFICtENCIEs 2. COMMENTS ON ANY DOCUMENT REQUIREMENT CONSIDERED TOO RIGIO 3. 1S THE DOCUMENT RESTRICTIVE? CJ ves CT) No (11 en, in what way?) 4. REMARKS SUBMITTED 8Y (Printed or typed name and addrese ~ Optional) TELEPHONE NO. DATE FORM S/N 0102+014=1802 1 JAN 72 REPLACES ECITION OF 3 JaN 66 WHICH MAY BE USED LAMAIAER At AR ASA AL MATA WRA AIA If @aRAAmTIAN TAr Trhics# Beambim as Rin Adri A