12. SWITCHING TRANSISTORS GPE Ne MAX. Pc BIAS 3] [2 | [1 MAX MAX MAX MAX DWG # LINE TYPE RISE DELAY; STORE| FALL jIN FREE MAX. | Cob rbb |STRUCTURE|/M/|MAX. |Y200 No. No. fab TIME TIME TIME TIME AIR @ Veb le hFE | SAT. xX P-PNP A|TEMP) s/a tr td ts tf 25C RES. Cob |N-NPN T T0200 (Hz) (s] (s) {s) (s) (Ww) (Vv) (A) (Q) (F) (s) (CC) |Ser. T J2N4057 Z50MSAl 40n 350n@) 360m TO D/| TOmd) 40 #4 Sps N Si | T50S/TOSS 2 |2N4952 250M8A} 40nd 350n@) 360m 10 Z| 10m] 75 A 8ps N Si |150S |TO98 3... |2N4953 _ |. 250M8A} 40nd 400n@ 360m 10 Z| 10md|150 A 8ps7 N Si_|150S |TO98 4 250M8A| 40nd 400ng 360m 10 DT 10mg] 40 A 8ps N Si [1508 |TO98 5 250M8A| 40nd 350n |1360m 10 Z| 10mg) 40 #A 8psZ N Si [150J1R207 |A | 6 250MS8A| 40nd 350n@_|360m 10 Z| 10mZ|_ 75 #A 8ps N Si [150J |R207__|A 7 250MSA| 40n@ 400nd [360m 10 S| 10mg 150 #A Bps N Si [1505 7R207 JA 8 250M8A| 40nd 400nD |360m 10 Z| 10mg) 40 #A 8psi N Si [150J 1R207. [A 9# _250M8 40n@ 150n_ _[250n@_|250m 6.0 Z | 10mgj110 # 10 7.0p 100n_|N-PEt Si_[125J |TO92 |b 10# 250M8 40nD 150n -[250n@ [250m 60D | 10mz) 60 10 7.0p TOOn {N-PET Si [1255 /TO92 JD WW# 250M8A| 40nd 60n@ 1150m 70 B j300mgz] 10 A 8.0pa NPE Si |200J |S5a 12# _ 250M8A| 40nd 20n 40n%_ |1360m 10 G|1.0mg | 20 A 8.0pi NPE Si_|200J |W5a 13# 250MSA| 40nd 20n 40nf |360m 10 D/1.Omd] 35 A 8.0pi NPE Si [2005 [W5a 14# 250MSAl 40nd 60n% |360m .70 Z |300mg| 10 #A 8.0pi NPE Si |2005 |W5a 18# |BSV59_ ss |. 250M 40nD 40n%_|360m 10 J |150mg)_ 30 |200 |TO18 164 |BSX30 250MSA| 40nd 60nd [3.0 Z 7TO0Omg|300mz| 50 # | 8.0p! N-DPE Si [2005 {TOS 17 +|GES5368 250M8 40n@ 350n |360m 10 Z|1.0mZ| 20A |2.0 # |8.0psZ N-PE Si ]150S |TO92 _18 | GES5369 | 250M8 40ng 350nf |1360m 10 D|1.0m%| 50 A |20 # |8.0psz N-PE Si_|150S |TO92 19 GES5370 250MS5 40nd 400nd [360m 10 @/1.0mG{ 75 A (2.0 # /8.0ps N-PE Si [1508 [TO92 20 |GES5371 250M5 40nd 400ng {360m 10 Z11.0mG| 20A |2.0 # |8.0psa4 N-PE Si |150S |TO92 21. |JAN2N708__ BOOMSAl 40nZ 25n 75nG_ 11.2 Z 1.0 Z |500ug| 15 A 40 6.0p/ N Si_|200S |T018 22 T2N914A 300MSA| 40n@ 40n 1.26 5.0 Z |500ma| 25 #A 6.0pld N Si [200J /TO18 23 300MSA| 40ng 25n 75nD 11.0 D 1.0 @ | 10mg} 30 A 22 6.0p4 N Si |200J |TO46 24, 300MSA|_ 40nd 20n 40n9 [360m 1.0 @ | 10mg] 60 #A N Si_[200 |TO18 25 7: 300MSA| 40nd 20n 40nd 11.2 D 10 | 10m |120 #A 137 6.0pa N si [3008 [TO18 26 |2N3606 300M8A| 40nd 35n 60nZ |200m 1.0 @ | 10mg 30 A 25 6.0pi N Si | 150J |TO98 27. |2N3606A_____| 300M8A| 40n@ | 35n 60nd _|320m 1.0 Z | 10m%120 A |2.5m# |6.0ps N Si_|120J |TO98 28 734 300M8Al 40n [8.0n 60nd 14.0 6 1.0 @ | 10m 35 A 20 9.0p) N Si [2008 |TOS5 29 |2N3734S Z00M8A! 40n 18.0n 40n 25n (4.0 Z 1.0 DZ [500mg 35 A 20 9.0p N Si |200S |TO39 7: Z300MS8A| 40n_ 18.0n . 60ne 120 D 10D | 10mg] 35 A 20 9.0p/1 N Si_|2005 |TO46 300MS5 400 T36n [160no [800m 10 Z| 50mZ) 40 A 12 25pi P-PE Si [175 |TO5 300M8A| 40n 40nd |360m 1.0 G | 10mg} 30 ta 6.0p4 N Si |200 |TO52 BOOMSA| 40n@ | 30n 50nd |150m 2.0 DZ |200mg|_ 12 A 13.5 5.0p4) NPE Si_|200J |S5a 300MSA| 40nd 20n 40nd [300m 5.0 Z |500mZ| 10 A 13.5 6.0p/ NPE Si [2005 |W5a 300MSA} 40n@ 25n 75nD |550m 10 ZG | 10mg] 20 4 60 6.0p/ N-PL Si [1755 |X156F 300MA8| 40n@ 40nd _ [360m 10G.| 10mZ| 30 A# 13.5 4.5p NPE Si_|2005 |TO18 300MA8| 40n@ 75nZ [360m 102 | 10mg) 30 A# | 40 4.0p .30n [NPE Si [2005 |TOT8 300M8A| 40nd | 25n$ 70nG |320m* 11.0 Z | 10mZ) 30 A 40 6.0pa NAN Si |200J |T018 300MSA| 40nd ___| 40n__ [360m 1.0 Z | 10m/120 #4 [3.5 6.0p4 N Si_{200J [TO18 300MS8A| 40n 75nO [400m TOD | 10mg) 120 2.7p N-PE Si [200J [T0178 300M8A| 40n THN 200m 1.0 DH | 10m@)120 #4 | 85 6.0pA 75nt |N Si [1255 |T0106 3OOMSA| 40nd 40ng5 200m 1.0% | 10m@l120 #7 | 80 6.0p N Si_|125J |TO106 350M85 40nd 7OnS |4.0 G 10 @ [10 @ | 20A# [10 # 17.3p N-AN Si [2005 |TO39 400M8 40nd 75nD |300m 10D | 10m | 40 40 4.5p 39nt |N-ME Si ]1754 |TO18 400M8 40n_ | 15n 140n_ 40n _|200m 10% | 10mg, 70 A# |130 4.5p$ 5On IP Si_|125J [R110 ~ 1 400M5 40n T5n 140n