Feb. 2012 Version 1.1 MagnaChip Semiconductor Ltd.
1
MDV1595S – Single N-Channel Trench MOSFET 30V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
V
Gate-Source Voltage
VGSS
V
Continuous Drain Current (1)
TC=25oC
ID
A
TC=100oC
TA=25oC
TA=70oC
Pulsed Drain Current
IDM
A
Power Dissipation
TC=25oC
PD
24.5
W
TC=100oC
9.8
TA=25oC
3.4(3)
TA=70oC
2.2(3)
Single Pulse Avalanche Energy (2)
EAS
48
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient (1)
RθJA
36
oC/W
Thermal Resistance, Junction-to-Case
RθJC
5.1
MDV1595S
Single N-channel Trench MOSFET 30V, 36.1A, 10.7mΩ
Features
VDS = 30V
ID = 36.1A @VGS = 10V
RDS(ON)
< 10.7mΩ @VGS = 10V
< 13.0mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
SBD Built In
General Description
The MDV1595S uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1595S is suitable for DC/DC converter and
general purpose applications.
PDFN33
S
S
S
G
G
S
S
S
D
D
D
D
D
D
D
D
D
G
S
Feb. 2012 Version 1.1 MagnaChip Semiconductor Ltd.
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MDV1595S – Single N-Channel Trench MOSFET 30V
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDV1595SURH
-55~150oC
PDFN33
Tape & Reel
Halogen Free
Electrical Characteristics (TJ = 25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
30
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
1.0
1.5
2.0
Drain Cut-Off Current
IDSS
VDS = 30V, VGS = 0V
-
-
0.5
mA
TJ=125oC
-
-
100
Gate Leakage Current
IGSS
VGS = ±12V, VDS = 0V
-
-
±100
nA
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 13A
-
8.2
10.7
mΩ
TJ=125oC
-
14.9
13.5
VGS = 4.5V, ID = 11A
-
10.0
13.0
Forward Transconductance
gfs
VDS = 5V, ID = 13A
-
27.3
-
S
Dynamic Characteristics
Total Gate Charge
Qg(10V)
VDS = 15.0V, ID = 13A,
VGS = 10V
15.6
22.3
29.0
nC
Total Gate Charge
Qg(4.5V)
6.9
9.9
12.9
Gate-Source Charge
Qgs
-
3.0
-
Gate-Drain Charge
Qgd
-
2.7
-
Input Capacitance
Ciss
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
-
1426
1853
pF
Reverse Transfer Capacitance
Crss
-
75.4
98
Output Capacitance
Coss
-
198
257
Turn-On Delay Time
td(on)
VGS = 10V, VDS = 15.0V,
ID = 13A, RG = 3.0Ω
-
7.8
-
ns
Rise Time
tr
-
3.1
-
Turn-Off Delay Time
td(off)
-
33.5
-
Fall Time
tf
-
4.3
-
Gate Resistance
Rg
f=1 MHz
0.5
1.0
2.0
Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = 1A, VGS = 0V
-
0.45
0.7
V
Body Diode Reverse Recovery Time
trr
IF = 13A, dl/dt = 100A/μs
-
24.2
36.3
ns
Body Diode Reverse Recovery Charge
Qrr
-
16.4
24.6
nC
Note :
1. Surface mounted FR4 board with 2oz. Copper. Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 16.8A, VDD = 27V, VGS = 10V.
3. T < 10sec
Feb. 2012 Version 1.1 MagnaChip Semiconductor Ltd.
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MDV1595S – Single N-Channel Trench MOSFET 30V
510 15 20 25 30 35 40 45 50
6
7
8
9
10
11
12
VGS = 10V
VGS = 4.5V
Drain-Source On-Resistance [mΩ]
ID, Drain Current [A]
2 3 4 5 6 7 8 9 10
0
5
10
15
20
25
30
※ Notes :
ID = 13A
TJ = 25℃
RDS(ON) [mΩ ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
0.0 0.5 1.0 1.5
20
40
60
80
100
TJ=25℃
※ Notes :
VGS = 0V
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
3
6
9
12
15
18
21
24
27
30
VGS, Gate-Source Voltage [V]
TJ=25℃
※ Notes :
VDS = 5V
ID, Drain Current [A]
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0 1 2 3 4 5
0
10
20
30
40
50
2.5V
VGS = 10V
3.5V
4.0V
3.0V
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
※ Notes :
1. VGS = 10 V
2. ID = 13 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
Feb. 2012 Version 1.1 MagnaChip Semiconductor Ltd.
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MDV1595S – Single N-Channel Trench MOSFET 30V
10-1 100101102
10-2
10-1
100
101
102
103
100 s
10 s1 s100 ms
DC
10 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max Rated
TC=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
10
20
30
40
50
ID, Drain Current [A]
TC, Case Temperature [℃]
10-4 10-3 10-2 10-1 100101102103
10-3
10-2
10-1
100
101
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC
* Rθ JC
(t) + TC
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
, Thermal Response
t1, Rectangular Pulse Duration [sec]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
0 5 10 15 20 25
0
2
4
6
8
10
VDS = 15V
※ Note : ID = 13A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
010 20 30
0
400
800
1200
1600
2000 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [F]
VDS, Drain-Source Voltage [V]
Feb. 2012 Version 1.1 MagnaChip Semiconductor Ltd.
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MDV1595S – Single N-Channel Trench MOSFET 30V
Package Dimension
PDFN33 (3.3x3.3mm)
Dimensions are in millimeters, unless otherwise specified
(Unit:
mm)
Feb. 2012 Version 1.1 MagnaChip Semiconductor Ltd.
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MDV1595S – Single N-Channel Trench MOSFET 30V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.