VDRM IT(AV)M IT(RMS) ITSM VT0 rT = 1800 V = 3000 A = 4710 A = 50.54x1 A 3 = 0.88 V = 0.103 m Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA1048-03 May 07 * Patented free-floating silicon technology * Low on-state and switching losses * Designed for traction, energy and industrial applications * Optimum power handling capability Blocking Maximum rated values 1) Symbol Conditions Parameter Max repetitive peak forward VDRM, and reverse blocking voltage VRRM 5STP 27H1800 Unit 1800 V 1000 V/s f = 50 Hz, tp = 10 ms, Tvj = 5...125C, Note 1 VAK VDRM,VRRM tp Critical rate of rise of commutating voltage dv/dtcrit t Exp. to 1210 V, Tvj = 125C Characteristic values Parameter Symbol Conditions min typ max Unit Forward leakage current IDRM VDRM, Tvj = 125C 200 mA Reverse leakage current IRRM VRRM, Tvj = 125C 200 mA Note 1: Voltage de-rating factor of 0.11% per C is applicable for Tvj below +5 C Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min 45 typ 50 max Unit 60 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Housing thickness H Surface creepage distance DS 36 mm Air strike distance Da 15 mm FM = 50 kN, Ta = 25 C min typ 25.6 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 0.9 kg 26.3 mm 5STP 27H1800 On-state Maximum rated values 1) Parameter Symbol Conditions Average on-state current IT(AV)M RMS on-state current IT(RMS) Peak non-repetitive surge current ITSM Limiting load integral I2t Peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70 C max Unit 3000 A 4710 A 3 tp = 10 ms, Tvj = 125 C, sine wave after surge: VD = VR= 0 V 50.54x10 6 A2s 3 A 6 A2s 12.8x10 53.3x10 tp = 8.3 ms, Tvj = 125 C, sine wave after surge: VD = VR= 0 V A 11.8x10 Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 3000 A, Tvj = 125 C 1.2 V Threshold voltage V(T0) IT = 2000 A - 6000 A, Tvj= 125 C 0.88 V Slope resistance rT 0.103 m Holding current IH Tvj = 25 C 70 mA Tvj = 125 C 60 mA Tvj = 25 C 600 mA Tvj = 125 C 200 mA Latching current Switching Maximum rated values IL min typ max Unit 1) Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Circuit-commutated turn-off tq time min Tvj = 125 C, Cont. IT = IT(AV), f = 50 Hz VD 1880 V, Cont. IFG = 2 A, tr = 0.5 s f = 1Hz Tvj = 125C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s, VD 0.67VDRM, dvD/dt = 20 V/s typ max Unit 150 A/s 1000 A/s 400 s Characteristic values Parameter Symbol Conditions Reverse recovery charge Qrr Reverse recovery current IRM Gate turn-on delay time tgd Tvj = 125C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s min typ max Unit 400 1000 As 15 40 A 3 s Tvj = 25 C, VD = 0.4VRM, IFG = 2 A, tr = 0.5 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1048-03 May 07 page 2 of 7 5STP 27H1800 Triggering Maximum rated values 1) Parameter Symbol Conditions Peak forward gate voltage VFGM min typ max 12 V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Average gate power loss PG(AV) see Fig. 9 Unit W Characteristic values Parameter Symbol Conditions Gate-trigger voltage VGT Tvj = 25 C min typ max 2.6 Unit V Gate-trigger current IGT Tvj = 25 C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 125 C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 125C 10 mA Thermal Maximum rated values 1) Parameter Symbol Conditions Operating junction temperature range Tvj min max Unit 125 C 140 C max Unit Double-side cooled Fm = 45...60 kN 10 K/kW Rth(j-c)A Anode-side cooled Fm = 45...60 kN 20 K/kW Rth(j-c)C Cathode-side cooled Fm = 45...60 kN 20 K/kW Double-side cooled Fm = 45...60 kN 2 K/kW Single-side cooled Fm = 45...60 kN 4 K/kW Storage temperature range Tstg typ -40 Characteristic values Parameter Symbol Conditions Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Z th(j- c) (t) = R i (1 - e- t/ i ) i =1 i 1 2 3 4 Ri(K/kW) 6.640 2.128 0.755 0.500 i(s) 0.4562 0.0593 0.0055 0.0011 Fig. 1 Transient thermal impedance (junction-tocase) vs. time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1048-03 May 07 page 3 of 7 5STP 27H1800 Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj IT + CTvj ln(IT +1) + DTvj IT VT125 = ATvj + BTvj IT + CTvj ln(IT +1) + DTvj IT A25 -6 123.0x10 Valid for IT = 300 - 70000 A B25 C25 D25 -6 -3 -3 44.01x10 160.2x10 -1.771x10 Valid for IT = 300 - 70000 A A125 -6 215.3x10 B125 -6 60.96x10 C125 -3 127.5x10 D125 -6 502.4x10 Fig. 2 On-state voltage characteristics Fig. 3 On-state characteristics, Tj = 125C, 10ms half sine Fig. 4 On-state power dissipation vs. mean on-state current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean on-state current, switching losses ignored ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1048-03 May 07 page 4 of 7 5STP 27H1800 Fig. 6 Surge on-state current vs. pulse length, half-sine wave IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) Fig. 7 Surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz 2..5 A 1.5 IGT 2 A/s 1 s 5...20 s diG/dt IGon 10 % tr t tp (IGM) tp (IGon) Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss Fig. 10 Reverse recovery charge vs. decay rate of on-state current Fig. 11 Peak reverse recovery current vs. decay rate of on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1048-03 May 07 page 5 of 7 5STP 27H1800 Turn-on and Turn-off losses Fig. 12 Turn-on energy, half sinusoidal waves Fig. 13 Turn-on energy, rectangular waves Fig. 14 Turn-off energy, half sinusoidal waves Fig. 15 Turn-off energy, rectangular waves Total power loss for repetitive waveforms: IT(t) IT(t), V(t) PTOT = PT + Won f + Woff f -diT/dt where t Qrr V(t) -IRRM -V0 T 1 PT = IT VT (IT ) dt T 0 -dv/dtcom -VRRM Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1048-03 May 07 page 6 of 7 5STP 27H1800 H Fig. 18 Device Outline Drawing Related documents: 5SYA 2020 5SYA 2049 5SYA 2051 5SYA 2034 5SYA 2036 5SZK 9104 5SZK 9105 Design of RC-Snubber for Phase Control Applications Voltage definitions for phase control thyristors and diodes Voltage ratings of high power semiconductors Gate-Drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1048-03 May 07