5STP27H1800 - Abb Switzerland Ltd. Semiconductors

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

V

D

R

M

=

1800

V

I

T(AV)M

=

3000

A

I

T(RMS)

=

4710

A

I

TSM

=

50.54×1

3

A

V

T0

=

0.88

V

r

T

=

0.103

m

Ω

Phase Control Thyristor

5STP 27H1800

Doc. No. 5SYA1048-03 May 07

• Patented free-floating silicon technology

• Low on-state and switching losses

• Designed for traction, energy and industrial applications

• Optimum power handling capability

Blocking

Maximum rated values 1)

Parameter Symbol

Conditions 5STP 27H1800 Unit

Max repetitive peak forward

and reverse blocking voltage VDRM,

VRRM f = 50 Hz, tp = 10 ms,

Tvj = 5…125°C, Note 1

t

VAK VDRM,VRRM

tp

1800 V

Critical rate of rise of

commutating voltage dv/dtcrit Exp. to 1210 V, Tvj = 125°C 1000 V/µs

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Forward leakage current IDRM VDRM, Tvj = 125°C 200 mA

Reverse leakage current IRRM VRRM, Tvj = 125°C 200 mA

Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C

Mechanical data

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Mounting force FM 45 50 60 kN

Acceleration a Device unclamped 50 m/s2

Acceleration a Device clamped 100 m/s2

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Weight m 0.9 kg

Housing thickness H FM = 50 kN, Ta = 25 °C 25.6 26.3 mm

Surface creepage distance DS 36 mm

Air strike distance Da 15 mm

1) Maximum rated values indicate limits beyond which damage to the device may occur

5STP 27H1800

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1048-03 May 07 page 2 of 7

On-state

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Average on-state current IT(AV)M Half sine wave, Tc = 70 °C 3000 A

RMS on-state current IT(RMS) 4710 A

Peak non-repetitive surge

current ITSM 50.54×103

A

Limiting load integral I2t

tp = 10 ms, Tvj = 125 °C, sine wave

after surge: VD = VR= 0 V 12.8×106 A2s

Peak non-repetitive surge

current ITSM 53.3×103 A

Limiting load integral I2t

tp = 8.3 ms, Tvj = 125 °C, sine wave

after surge: VD = VR= 0 V 11.8×106 A2s

Characteristic values

Parameter Symbol

Conditions min typ max Unit

On-state voltage VT IT = 3000 A, Tvj = 125 °C 1.2 V

Threshold voltage V(T0) 0.88 V

Slope resistance rT IT = 2000 A - 6000 A, Tvj= 125 °C 0.103 mΩ

Holding current IH Tvj = 25 °C 70 mA

Tvj = 125 °C 60 mA

Latching current IL Tvj = 25 °C 600 mA

Tvj = 125 °C 200 mA

Switching

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Critical rate of rise of on-

state current di/dtcrit Cont.

f = 50 Hz

150 A/µs

Critical rate of rise of on-

state current di/dtcrit

Tvj = 125 °C,

IT = IT(AV),

VD ≤ 1880 V,

IFG = 2 A, tr = 0.5 µs Cont.

f = 1Hz 1000 A/µs

Circuit-commutated turn-off

time tq Tvj = 125°C, ITRM = 2000 A,

VR = 200 V, diT/dt = -1.5 A/µs,

VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs

400 µs

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Reverse recovery charge Qrr 400 1000 µAs

Reverse recovery current IRM Tvj = 125°C, ITRM = 2000 A,

VR = 200 V,

diT/dt = -1.5 A/µs 15 40 A

Gate turn-on delay time tgd Tvj = 25 °C, VD = 0.4⋅VRM, IFG = 2 A,

tr = 0.5 µs 3 µs

5STP 27H1800

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1048-03 May 07 page 3 of 7

Triggering

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Peak forward gate voltage V

FGM 12 V

Peak forward gate current IFGM 10 A

Peak reverse gate voltage V

RGM 10 V

Average gate power loss PG(AV) see Fig. 9 W

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Gate-trigger voltage VGT Tvj = 25 °C 2.6 V

Gate-trigger current IGT Tvj = 25 °C 400 mA

Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 125 °C 0.3 V

Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 125°C 10 mA

Thermal

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Operating junction

temperature range Tvj 125 °C

Storage temperature range T

stg -40 140 °C

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Thermal resistance junction

to case Rth(j-c) Double-side cooled

Fm = 45...60 kN 10 K/kW

Rth(j-c)A Anode-side cooled

Fm = 45...60 kN 20 K/kW

Rth(j-c)C Cathode-side cooled

Fm = 45...60 kN 20 K/kW

Thermal resistance case to

heatsink Rth(c-h) Double-side cooled

Fm = 45...60 kN 2 K/kW

Rth(c-h) Single-side cooled

Fm = 45...60 kN 4 K/kW

Analytical function for transient thermal

impedance:

)e-(1R = (t)Z n

1i

t/-

i c)-th(j ∑

=

i

τ

i 1 2 3 4

Ri(K/kW) 6.640 2.128 0.755 0.500

τi(s) 0.4562 0.0593 0.0055 0.0011

Fig. 1 Transient thermal impedance (junction-to-

case) vs. time

5STP 27H1800

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1048-03 May 07 page 4 of 7

Max. on-state characteristic model:

VT25 TTvjTTvjTTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(

Valid for IT = 300 – 70000 A

Max. on-state characteristic model:

VT125 TTvjTTvjTTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(

Valid for IT = 300 – 70000 A

A25 B25 C25 D25 A125 B125 C125 D125

123.0×10-6 44.01×10-6 160.2×10-3 -1.771×10-3

215.3×10-6

60.96×10-6 127.5×10-3 502.4×10-6

Fig. 2 On-state voltage characteristics

Fig. 3 On-state characteristics,

Tj = 125°C, 10ms half sine

Fig. 4 On-state power dissipation vs. mean on-state

current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean

on-state current, switching losses ignored

5STP 27H1800

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1048-03 May 07 page 5 of 7

Fig. 6 Surge on-state current vs. pulse length,

half-sine wave Fig. 7 Surge on-state current vs. number of pulses,

half-sine wave, 10 ms, 50Hz

IGM

IGon

100 %

90 %

10 %

IGM ≈ 2..5 A

IGon ≥ 1.5 IGT

diG/dt ≥ 2 A/µs

tr≤ 1 µs

tp(IGM)≈ 5...20 µs

diG/dt

tr

tp (IGM)

IG (t)

t

tp (IGon)

Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss

Fig. 10 Reverse recovery charge vs. decay rate of

on-state current Fig. 11 Peak reverse recovery current vs. decay rate

of on-state current

5STP 27H1800

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1048-03 May 07 page 6 of 7

Turn-on and Turn-off losses

Fig. 12 Turn-on energy, half sinusoidal waves Fig. 13 Turn-on energy, rectangular waves

Fig. 14 Turn-off energy, half sinusoidal waves Fig. 15 Turn-off energy, rectangular waves

Qrr

IT(t), V(t)

t

-diT/dt

IT(t)

-V0

-VRRM

V(t)

-IRRM

-dv/dtcom

Total power loss for repetitive waveforms:

fWfWPP offonTTOT ⋅+⋅+=

where

dtIVI

T

PT

TTTT ∫⋅= 0)(

1

Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss

5STP 27H1800

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1048-03 May 07

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306

Email abbsem@ch.abb.com

Internet www.abb.com/semiconductors

`

H

Fig. 18 Device Outline Drawing