July 2005 / B
Page 1
SEMICONDUCTOR
TAK CHEONG
®
500 mW LL-34 Hermetically
Sealed Glass – High Voltage
Switching Diodes
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VRRM Maximum Repetitive Reverse Voltage 250 V
TSTG Storage Temperature Range -65 to +200 °C
TJ Operating Junction Temperature 200 °C
IF (AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Current
Pulse Width = 1.0 Second
Pulse Width = 1.0 µsecond
1.0
4.0
A
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Thermal Characteristics
Symbol Parameter Value Units
PD Power Dissipation 500 mW
RθJA Thermal Resistance, Junction to Ambient 350 °C/W
Specification Features:
LL-34 (Mini-MELF) Package
Surface Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and terminals are readily solderable
1st band indicates negative polarity
Electrical Characteristics TA = 25°C unless otherwise noted
Limits
Symbol Parameter Test Condition
Min Max
Unit
BV Breakdown Voltage TC BAV100
TCBAV101
TCBAV102
TCBAV103
IR=100µA
60
120
200
250
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Volts
Volts
Volts
Volts
IR Reverse Leakage Current TCBAV100
TCBAV101
TCBAV102
TCBAV103
VR=50V
VR=100V
VR=150V
VR=200V
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100
100
100
100
nA
nA
nA
nA
VF Forward Voltage IF=100mA --- 1.0 Volts
TRR Reverse Recovery Time IF=IR=30mA
RL=100Ω
IRR=3mA
--- 50 nS
C Capacitance VR=0V, f =1MHZ --- 5.0 pF
TCBAV100/TCBAV101/TCBAV102/TCBAV103
Cathode Anode
ELECTRICAL SYMBOL
DEVICE MARKING DIAGRAM
Cathode Band Color : Black
SURFACE MOUNT
LL34