11 77 BLUE HERON BLVD. @ RIVIERA BEACH, FLORIDA 33404 TEL: (407) 848-4311 @TLX: 51-3435 @FAX: (407) 863-5946 PRODUCT CATALOG N~CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS 1000V, 2.0A, 6.009 SDF2N100 JAA SDF 2N100 JAB PARAMETER SYMBOL UNITS Drain-source Volt.(1) VDSS 1000 Vde Drain-Gate Voltage (Res#1.0Mn) (1) VDGR 1000 Vde Gate-Source Voltage Continuous VGS #20 Vde Drain Current Continuous (Te = 25C) ID 2 Ade Drain Current Pulsed(3) 'DM 8 A Total Power Dissipation PD 7S Ww Power Dissipation . Derating > 25C 0.6 wrec Operating & Storage Temp. | TU/Tsig -55 TO +150 c Thermal Resistance RthJc 1.7 C/W Max.Lead temperature TL 300 C ELECTRICAL CHARACTERISTICS Tc=25c (MRESS.OTHER. FEATURES @ RUGGED PACKAGE @ HI-REL CONSTRUCTION @ CERAMIC EYELETS @ LEAD BENDING OPTIONS @ COPPER CORED 52 ALLOY PINS @ LOW IR LOSSES @ LOW THERMAL RESISTANCE @ OPTIONAL MIL-S-19500 SCREENING SCHEMATIC (0) [TERMINAL CONNECTIONS G H k- 1] GATE 1 | DRAIN ' 2|DRAIN |2] SOURCE (S) [3TSource [3] GATE NDARD BEND CONF TGURATIONS JAA Ss 1 D . i I (CUSTOM BEND OPTIONS AVAILABLE) 2 3 Uy? S 23 1 PARAMETER SYMBOL] TEST CONDITIONS MINI TYP... MAX JUNI TS Drain-source VGS=OV Breakdown Volt |PR)55| jn 550 ya 1000; - | - | V Velsage S/VGS(TH)|VDS=vGS 1D=250 nA |2.0| - [4.5] v Gate arse : _ |. Leakage tGSS |VGS=#+20 Vv 100] nA Zero Gate VDS*MAX.RATING VGS=0] - {250] HA oltage Drain | IDSS = eset weSeg MASTS | = | fool an Static Drain- VGS=10 V Source On-State|lRDS(ON - | - |6.0] 0 Resistance(1) (ON) 10=1.0A Forward Trans- VOS 2 15 V Conductance (2)} SS | ipSe1.0a 1.5] - | ~ [S() Input Capacitance] CISS -~ |720] pF Output Capacitance] COSS |YGS*OV VOS=25 V ~ [60] - | pF [Reverse Transter f=1.0 MHz ; CRSS - is - pF Capacitance Turn-On Delay [td(on)|yop=soov Zo=200 - | - | 30] ns Rise Time tr (Mosret itching tl ~ | - | 35 | ns Turn-Off Deltay|td(off)]are essentially indepen- - | - | 80] As Fall Time tf dent of operating temp. _ a 55 ns Total Gate Charge GaterSource Plus} Qg - - 40 | nc ate Sou VDS=0.8 MAX -RATING Gate-Source =0. : Charge Qgs (Gate charge is essent | - ~ ~ 10 | nc = . ally Independen Qo e Comite} Qgd operating temperature) _ _ is | nc Charge SOURCE-DRAIN DIODE RATINGS & CHARACT.Tc=25C ((HRESS.OzcHER., ) PARAMETER SYMBOL TEST CONDITIONS MIN.| TYP ..|MAX .JUNITS Continuous ig: Source Current| IS Mod Tea MOSFET ie ~|- |2.0] A (Body Diode) integral reverse Pulse Source P-N junction recti- Current (Body | ISM |fier (See schematic)| - | - |8.0| A Diode) (1) Diode Forward IF=2.0A VGS=0V - - Voltage (2) | VSO |tcesa5ec 1.5] Tco=+25 C Reverse _ - Recovery Time | rr |1F=2.0A 800 ns di/dt#100A/ wS D BEND conrieuraTions | JAB ps 12 (CUSTOM BEND OPTIONS AVAILABLE) 1) Ty = 25C to 150C. 2) Pulse test: Pulse Width <300unS, Duty Cycle <2%. 3) Repetitive Rating: Pulse Width limited By Max.junction Temperature. A45