. ff UG3001UG3005 VISHAY Vishay Lite-On Power Semiconductor 3.0A UltraFast Glass Passivated Rectifiers Features Glass passivated die construction Diffused junction Ultrafast switching for high efficiency High current capability and low forward voltage drop Surge overload rating to 125A peak Low reverse leakage current Plastic material - UL Recognition flammability classification 94V-0 Absolute Maximum Ratings Tj = 25C epetitive peak reverse voltage =Working peak reverse voltage UG3002 100 Vv =DC Blocking voltage UG3003 200 V UG3004 400 Vv UG3005 600 Vv Peak forward surge current lesm 125 A Average forward current Ta=55C lFay 3 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C pe Forward voltage IF=3A UG3001-3003 Ve 0.95| V UG3004 Ve 125 | V UG3005 Ve 1.7 Vv Reverse current Tp=25C IR 5 uA Ta=100C IR 100 | pA Reverse recovery time ||l-F=1A, IR=0.5A, UG3001-3004 ter 50 ns I1=0.25A UG3005 tie 75 | ns Diode capacitance VpR=4V, f=1MHz UG3001-3004 Cp 60 pF UG3005 Cp 30 pF Thermal resistance RthJA 35 KAW junction to ambient Rev. A2, 24-Jun-98 1 (4)UG3001UG3005 war Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) ~ 3.0 Single phase half-wave x 150 <r 60 Hz resistive or inductive load yy ~ c e oO o 24 5 \ 100 D 2 N\ gq 18 5 \ = n 3 QZ NY LL o N o 12 = ~ o 2 50 DS os Ww o x NY 3 $ > 0.6 o MN a 's rN a ne 0 = 0 25 50 75 100 125 150 175 200 1 10 100 15430 Tamb Ambient Temperature ( C ) 15432 Number of Cycles at 60 Hz Figure 1. Max. Average Forward Current vs. Figure 3. Max. Peak Forward Surge Current vs. Ambient Temperature Number of Cycles 10 [q3001-UG3003 Da3004 100 _ UG3001-UG3004 S B. = 8 3 9 UG3005 2 UG3005 a 10 w Oo 5 3 ir 01 2 I ao as I a 7, = 25C o 001 IF Pulse Width = 300 ps 1 0.6 0.8 1.0 1.2 1.4 1 10 100 15431 Ve Forward Voltage ( V ) 15433 Vr Reverse Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 2 (4) Rev. A2, 24-Jun-98UG3001UG3005 VEISHAY Vishay Lite-On Power Semiconductor Dimensions in mm _ A poe | ay poe | ny LO-201AD [im Min Max Ay 25.40 - Ce oe B 1.20 7.50 technical drawings ( 1.20 1.30 according to DIN specifications D 430) 5.30 mes AlL Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: 1.1 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4)UG3001UG3005 Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98