DISCRETE SEMICONDUCTORS DATA SHEET PHC21025 Complementary enhancement mode MOS transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 FEATURES PINNING - SOT96-1 (SO8) * High-speed switching PIN SYMBOL DESCRIPTION * No secondary breakdown 1 s1 source 1 * Very low on-resistance. 2 g1 gate 1 3 s2 source 2 APPLICATIONS 4 g2 gate 2 * Motor and actuator driver 5 d2 drain 2 * Power management 6 d2 drain 2 * Synchronized rectification. 7 d1 drain 1 8 d1 drain 1 DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. d1 d1 handbook, halfpage 8 5 1 4 d2 d2 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. MAM118 g1 s1 s2 g2 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per channel VDS VSD drain-source voltage (DC) N-channel - 30 V P-channel - -30 V source-drain diode forward voltage N-channel IS = 1.25 A - 1.2 V P-channel IS = -1.25 A - -1.6 V open drain - 20 V VGSO gate-source voltage (DC) VGSth gate-source threshold voltage ID RDSon Ptot 1997 Jun 20 V N-channel VDS = VGS; ID = 1 mA 1 2.8 V P-channel VDS = VGS ; ID = -1 mA -1 -2.8 V N-channel - 3.5 A P-channel - -2.3 A drain current (DC) drain-source on-state resistance N-channel VGS = 10 V; ID = 2.2 A - 0.1 P-channel VGS = -10 V; ID = -1 A - 0.25 Ts = 80 C - 2 W total power dissipation 2 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per channel VDS drain-source voltage (DC) - 30 V - -30 V - 20 V N-channel - 3.5 A P-channel - -2.3 A - 14 A N-channel P-channel VGSO gate-source voltage (DC) open drain ID drain current (DC) Ts 80 C IDM peak drain current note 1 N-channel - -10 A Ts = 80 C; note 2 - 2 W Tamb = 25 C; note 3 - 2 W Tamb = 25 C; note 4 - 1 W Tamb = 25 C; note 5 - 1.3 W P-channel Ptot total power dissipation Tstg storage temperature -65 +150 C Tj operating junction temperature - 150 C N-channel - 1.5 A P-channel - -1.25 A N-channel - 6 A P-channel - -5 A Source-drain diode IS ISM Ts 80 C source current (DC) peak pulsed source current note 1 Notes 1. Pulse width and duty cycle limited by maximum junction temperature. 2. Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time. 3. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. 4. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. 5. Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. 1997 Jun 20 3 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MLB836 2.5 MLB833 - 1 2 10 handbook, halfpage handbook, halfpage P tot ID (A) (W) 2.0 (1) 10 tp = 10 s 1.5 1 1 ms 1.0 tp = T P 10 0.5 1 DC 0.1 s t tp T 0 50 0 100 150 10 200 o 2 10 T s ( C) 1 1 10 V DS = 0.01. Ts = 80 C. (1) RDSon limitation. Fig.2 Power derating curve. Fig.3 SOAR; N-channel. MBE155 10 2 handbook, halfpage ID (A) 10 tp = 10 s (1) 1 1 ms tp = T P 10 1 DC 0.1 s t tp T 10 2 10 1 1 10 V DS (V) 10 2 = 0.01. Ts = 80 C. (1) RDSon limitation. Fig.4 SOAR; P-channel. 1997 Jun 20 4 (V) 10 2 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER VALUE UNIT 35 K/W thermal resistance from junction to soldering point CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per channel V(BR)DSS VGSth IDSS IGSS IDon RDSon drain-source breakdown voltage N-channel VGS = 0; ID = 10 A 30 - - V P-channel VGS = 0; ID = -10 A -30 - - V N-channel VGS = VDS ; ID = 1 mA 1 - 2.8 V P-channel VGS = VDS ; ID = -1 mA -1 - -2.8 V N-channel VGS = 0; VDS = 24 V - - 100 nA P-channel VGS = 0; VDS = -24 V - - -100 nA N-channel - - 100 nA P-channel - - 100 nA 3.5 - - A gate-source threshold voltage drain-source leakage current gate leakage current on-state drain current N-channel VGS = 10 V; VDS = 1 V VGS = 4.5 V; VDS = 5 V 2 - - A P-channel VGS = -10 V; VDS = -1 V -2.3 - - A VGS = -4.5 V; VDS = -5 V -1 - - A drain-source on-state resistance VGS = 4.5 V; ID = 1 A - 0.11 0.2 VGS = 10 V; ID = 2.2 A - 0.08 0.1 VGS = -4.5 V; ID = - 0.5 A - 0.33 0.4 VGS = -10 V; ID = -1 A - 0.22 0.25 N-channel VDS = 20 V; ID = 2.2 A 2 4.5 - S P-channel VDS = -20 V; ID = -1 A 1 2 - S N-channel VGS = 0; VDS = 20 V; f = 1 MHz - 250 - pF P-channel VGS = 0; VDS = -20 V; f = 1 MHz - 250 - pF N-channel VGS = 0; VDS = 20 V; f = 1 MHz - 140 - pF P-channel VGS = 0; VDS = -20 V; f = 1 MHz - 140 - pF N-channel P-channel yfs Ciss Coss 1997 Jun 20 VGS = 20 V; VDS = 0 forward transfer admittance input capacitance output capacitance 5 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors SYMBOL Crss QG QGS QGD PHC21025 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT reverse transfer capacitance N-channel VGS = 0; VDS = 20 V; f = 1 MHz - 50 - pF P-channel VGS = 0; VDS = -20 V; f = 1 MHz - 50 - pF N-channel VGS = 10 V; VDS = 15 V; ID = 2.3 A - 10 30 nC P-channel VGS = -10 V; VDS = -15 V; ID = -2.3 A - 10 25 nC total gate charge gate-source charge N-channel VGS = 10 V; VDS = 15 V; ID = 2.3 A - 1 - nC P-channel VGS = -10 V; VDS = -15 V; ID = -2.3 A - 1 - nC 2.5 - nC 3 - nC gate-drain charge - N-channel VGS = 10 V; VDS = 15 V; ID = 2.3 A P-channel VGS = -10 V; VDS = -15 V; ID = -2.3 A - Switching times ton toff turn-on time N-channel VGS = 0 to 10 V; VDD = 20 V; ID = 1 A; RL = 20 - 15 40 ns P-channel VGS = 0 to -10 V; VDD = -20 V; ID = -1 A; RL = 20 - 20 80 ns N-channel VGS = 10 to 0 V; VDD = 20 V; ID = 1 A; RL = 20 - 25 140 ns P-channel VGS = -10 to 0 V; VDD = -20 V; ID = -1 A; RL = 20 - 50 140 ns N-channel VGD = 0; IS = 1.25 A - - 1.2 V P-channel VGD = 0; IS = -1.25 A - - -1.6 V N-channel IS = 1.25 A; di/dt = 100 A/s - 35 100 ns P-channel IS = -1.25 A; di/dt = 100 A/s - 150 200 ns turn-off time Source-drain diode VSD trr 1997 Jun 20 source-drain diode forward voltage reverse recovery time 6 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MBE137 MBE144 600 600 handbook, halfpage handbook, halfpage C (pF) C (pF) 400 400 C iss C iss 200 200 Coss Coss C rss C rss 0 0 0 10 20 V DS (V) 0 30 10 VGS = 0. Tj = 25 C. VGS = 0. Tj = 25 C. Fig.5 Fig.6 Capacitance as a function of drain-source voltage; N-channel; typical values. 20 V DS (V) 30 Capacitance as a function of drain source voltage; P-channel; typical values. handbook, halfpage MBE142 10 V ID MBE154 10 16 VGS = handbook, halfpage VGS = 10 V ID (A) 8 6V (A) 7.5 V 6V 12 5V 6 8 5V 4.5 V 4.5 V 4 4V 4V 4 2 3.5 V 3.5 V 3V 2.5 V 3V 0 0 0 2 4 6 8 10 V DS (V) 0 12 2 Tj = 25 C. Tj = 25 C. Fig.7 Fig.8 Output characteristics; typical values; N-channel. 1997 Jun 20 7 4 6 8 10 V DS (V) 12 Output characteristics; typical values; P-channel. Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MBE141 MBE157 16 10 handbook, halfpage handbook, halfpage ID (A) ID (A) 8 12 6 8 4 4 2 0 0 0 2 4 6 V 8 GS (V) 0 2 4 6 V GS (V) 8 VDS = 10 V. Tj = 25 C. VDS = -10 V. Tj = 25 C. Fig.9 Fig.10 Transfer characteristic; typical values; P-channel. Transfer characteristic; typical values; N-channel. MBE136 10 MBE145 10 VGS handbook, halfpage handbook, halfpage VGS (V) (V) 8 8 6 6 4 4 2 2 0 0 2 4 0 6 Q (nC) 8 g 0 2 4 6 8 10 Q g (nC) VDD = 15 V. ID = 3.5 A. VDD = -15 V. ID = -2.3 A. Fig.11 Gate-source voltage as a function of total gate charge; N-channel. Fig.12 Gate-source voltage as a function of total gate charge; P-channel. 1997 Jun 20 8 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MBE159 6 MBE158 6 handbook, halfpage handbook, halfpage IS (A) IS (A) 4 4 (1) (2) (1) (3) (2) (3) 2 2 0 0 0 0.5 1 V SD (V) 0 1.5 0.5 1 1.5 2 V SD (V) VGD = 0. (1) Tj = 150 C. (2) Tj = 25 C. (3) Tj = -55 C. VGD = 0. (1) Tj = 150 C. (2) Tj = 25 C. (3) Tj = -55 C. Fig.13 Source current as a function of source-drain diode forward voltage; N-channel. Fig.14 Source current as a function of source-drain diode forward voltage; P-channel. MDA217 104 handbook, halfpage MDA165 104 handbook, halfpage RDSon (m) RDSon (1)(2)(3)(4)(5)(6) (m) (1) (2)(3) (4) (5) 103 103 102 10 0 2 4 6 8 102 10 VGS (V) VDS ID x RDSon; Tj = 25 C. (1) ID = 0.1 A. (2) ID = 0.5 A. (3) ID = 1 A. -2 -4 -6 -8 -10 VGS (V) -VDS -ID x RDSon; Tj = 25 C. (1) ID = -0.1 A. (2) ID = -0.5 A. (3) ID = -1 A. (4) ID = 2.2 A. (5) ID = 3.5 A. (6) ID = 7 A. Fig.15 Drain-source on-state resistance as a function of gate-source voltage; typical values; N-channel. 1997 Jun 20 0 (4) ID = -2.3 A. (5) ID = -4.5 A. Fig.16 Drain-source on-state resistance as a function of gate-source voltage; typical values; P-channel. 9 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MBE139 1.8 MBE138 1.2 handbook, halfpage handbook, halfpage k k 1.6 1.1 (1) 1.4 1.0 (2) 1.2 0.9 1.0 0.8 0.8 0.7 0.6 0.6 50 0 50 100 50 150 o T j ( C) 0 R DSon at T j k = ---------------------------------------R DSon at 25 C V GSth at T j k = ------------------------------------V GSth at 25C 50 100 o 150 T j ( C) Typical VGSth at ID = 1 mA; VDS =VGS = VGSth. Typical RDSon at: (1) ID = 2.2 A; VGS = 10 V. (2) ID = 1 A; VGS = 4.5 V. Fig.17 Temperature coefficient of gate-source threshold voltage; N and P-channels. Fig.18 Temperature coefficient of drain-source on-resistance; N-channel. MBE146 1.8 handbook, halfpage k 1.6 (1) (2) 1.4 1.2 1.0 0.8 0.6 50 0 R DSon at T j k = ---------------------------------------R DSon at 25 C 50 100 o 150 T j ( C) Typical RDSon at: (1) ID = -1 A; VGS = -10 V. (2) ID = -0.5 A; VGS = -4.5 V. Fig.19 Temperature coefficient of drain-source on-resistance; P-channel. 1997 Jun 20 10 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MBE152 10 2 R th j-s (K/W) = 0.75 10 0.33 0.5 0.2 0.1 0.05 1 0.02 tp = T P 0.01 0 t tp T 10 1 10 6 10 5 10 4 10 3 10 2 10 1 t p (s) 1 Fig.20 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. 1997 Jun 20 11 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024 inches 0.010 0.057 0.069 0.004 0.049 0.01 0.01 0.028 0.004 0.012 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03S MS-012AA 1997 Jun 20 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-02-04 97-05-22 12 o 8 0o Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jun 20 13 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 NOTES 1997 Jun 20 14 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 NOTES 1997 Jun 20 15 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com (c) Philips Electronics N.V. 1997 SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 137107/00/02/pp16 Date of release: 1997 Jun 20 Document order number: 9397 750 02509