BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n n n n n n n STMicroelectronics PREFERRED SALES TYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE APPLICATIONS n ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING n FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS Figure 1: Package 3 TO-220 1 2 Figure 2: Internal Schematic Diagram DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1: Order Codes Part Number Marking Package Packaging BUL128D-B BUL128D-B TO-220 Tube Table 2: Absolute Maximum Ratings Symbol VCES Parameter VCEO Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage IC ICM IB IBM Value Unit 700 V 400 V V(BR)EBO V (IC= 0, IB = 2 A, tp < 10 s, TJ = 150 oC) Collector Current 4 A Collector Peak Current (tp < 5ms) 8 A Base Current 2 A Base Peak Current (tp < 5ms) 4 A February 2005 Rev. 2 1/8 BUL128D-B Symbol Parameter Value Unit 70 W o Ptot Total Dissipation at TC = 25 C Tstg Storage Temperature TJ Max. Operating Junction Temperature -65 to 150 C 150 C Table 3: Thermal Data Rthj-case Thermal Resistance Junction-Case Max 1.78 o C/W Rthj-amb Thermal Resistance Junction-Ambient Max 62.5 o C/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICES Parameter Min. Typ. Collector Cut-off Current VCE = 700 V (VBE = 0 V) ICEO Test Conditions VCE =700 V Tj = 125 oC Collector Cut-off Current VCE = 400 V Max. Unit 100 A 500 A 250 A 18 V (IB = 0) V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 mA 9 (IC = 0 ) VCEO(sus)* Collector-Emitter Sustaining Voltage IC = 100 mA L = 25 mH IC = 0.5 A IB = 0.1 A IC = 1 A 400 V (IB = 0 ) VCE(sat)* VBE(sat)* Collector-Emitter Saturation Voltage 0.7 V IB = 0.2 A 1 V IC = 2.5 A IB = 0.5 A 1.5 V IC = 4 A IB = 1 A 1.1 V IB = 0.2 A 1.2 V IC = 2.5 A IB = 0.5 A 1.3 V IC = 10 mA VCE = 5 V 10 IC = 2 A VCE = 5 V 12 RESISTIVE LOAD VCC =200 V IC = 2 A ts Storage Time IB1 = 0.4 A VBE(off) = -5 V tf Fall Time DC Current Gain RBB = 0 W 2/8 L = 200 H INDUCTIVE LOAD (see figure 15) VCC =250 V IC = 2 A ts Storage Time IB1 = 0.4 A IB2 = -0.4 A tf Fall Time Tp = 30 s (see figure 14) * Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %. . V IB = 0.1 A hFE* Base-Emitter Saturation IC = 0.5 A Voltage IC = 1 A 0.5 32 0.6 s 0.1 s 2 2.9 0.2 s s BUL128D-B Figure 3: Safe Operating Area Figure 6: Derating Current Figure 4: DC Current Gain Figure 7: DC Current Gain Figure 5: Collector-Emitter Saturation Voltage Figure 8: Base-Emitter Saturation Voltage 3/8 BUL128D-B Figure 9: Inductive Load Fall Time Figure 12: Inductive Load Stoarage Time Figure 10: Resistive Load Fall Time Figure 13: Resistive Load Stoarage Time Figure 11: Reverse Biased Operating Area 4/8 BUL128D-B Figure 14: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Table 15: Restistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 5/8 BUL128D-B TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 6/8 TYP 0.154 0.645 28.90 1.137 oP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 BUL128D-B Table 5: Version Release Date 01-Oct-2002 15-Feb-2005 1 1 Change Designator First Release. Added table 1 on page 1. 7/8 BUL128D-B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8