1/8February 2005
nSTMicroelectronics PREFERRED SALES
TYPE
nNPN TRANSISTOR
nHIGH VOLTAGE CAPABILITY
nLOW SPREAD OF DYNAMIC PARAMETERS
nMINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n VERY HIGH SWITCHING SPEED
nINTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
APPLICATIONS
nELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
nFLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
Figure 1: Package
Figure 2: Internal Schematic Diagram
Table 1: Order Codes
Table 2: Absolute Maximum Ratings
1
2
3
TO-220
Part Number Marking Package Packaging
BUL128D-B BUL128D-B TO-220 Tube
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 700 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VEBO Emitter-Base Voltage
(IC= 0, IB = 2 A, tp < 10 µs, TJ = 150 oC)
V(BR)EBO V
ICCollector Current 4A
ICM Collector Peak Current (tp < 5ms) 8A
IBBase Current 2A
IBM Base Peak Current (tp < 5ms) 4A
BUL128D-B
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
Rev. 2
BUL128D-B
2/8
Table 3: Thermal Data
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %.
.
Ptot Total Dissipation at TC = 25 oC70 W
Tstg Storage Temperature -65 to 150 °C
TJMax. Operating Junction Temperature 150 °C
Symbol Parameter Value Unit
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.78
62.5
oC/W
oC/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off Current
(VBE = 0 V)
VCE = 700 V
VCE =700 V Tj = 125 oC
100
500
µA
µA
ICEO Collector Cut-off Current
(IB = 0)
VCE = 400 V 250 µA
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0 )
IE = 10 mA 9 18 V
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0 )
IC = 100 mA L = 25 mH 400 V
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 0.5 A IB = 0.1 A
IC = 1 A IB = 0.2 A
IC = 2.5 A IB = 0.5 A
IC = 4 A IB = 1 A 0.5
0.7
1
1.5
V
V
V
V
VBE(sat)* Base-Emitter Saturation
Voltage
IC = 0.5 A IB = 0.1 A
IC = 1 A IB = 0.2 A
IC = 2.5 A IB = 0.5 A
1.1
1.2
1.3
V
V
V
hFE* DC Current Gain IC = 10 mA VCE = 5 V
IC = 2 A VCE = 5 V
10
12 32
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
VCC =200 V IC = 2 A
IB1 = 0.4 A VBE(off) = -5 V
RBB = 0 W L = 200 µH
(see figure 15)
0.6
0.1
µs
µs
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
VCC =250 V IC = 2 A
IB1 = 0.4 A IB2 = -0.4 A
Tp = 30 µs (see figure 14)
2
0.2
2.9 µs
µs
BUL128D-B
3/8
Figure 3: Safe Operating Area
Figure 4: DC Current Gain
Figure 5: Collector-Emitter Saturation Voltage
Figure 6: Derating Current
Figure 7: DC Current Gain
Figure 8: Base-Emitter Saturation Voltage
BUL128D-B
4/8
Figure 9: Inductive Load Fall Time
Figure 10: Resistive Load Fall Time
Figure 11: Reverse Biased Operating Area
Figure 12: Inductive Load Stoarage Time
Figure 13: Resistive Load Stoarage Time
BUL128D-B
5/8
Figure 14: Inductive Load Switching Test Circuit
Table 15: Restistive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
3)
Fast recovery rectifier
2) Non-inductive Resistor
1) Fast electronic switch
BUL128D-B
6/8
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP
3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
BUL128D-B
7/8
Table 5:
Version Release Date Change Designator
01-Oct-2002 1 First Release.
15-Feb-2005 1 Added table 1 on page 1.
BUL128D-B
8/8
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