4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7
December 2014
4N38M, H11D1M, H11D3M, MOC8204M
6-Pin DIP High Voltage Phototransistor Optocouplers
Features
■
High Voltage:
– MOC8204M, BV
CEO
= 400 V
– H11D1M, BV
CEO
= 300 V
– H11D3M, BV
CEO
= 200 V
■
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
■
DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■
Power Supply Regulators
■
Digital Logic Inputs
■
Microprocessor Inputs
■
Appliance Sensor Systems
■
Industrial Controls
Description
The 4N38M, H11D1M, H11D3M, and MOC8204M are
phototransistor-type optically coupled optoisolators. A
gallium arsenide infrared emitting diode is coupled with a
high voltage NPN silicon phototransistor. The device is
supplied in a standard plastic six-pin dual-in-line
package.
Schematic Package Outlines
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6BASE
N/C
Figure 2. Package Outlines
Figure 1. Schematic
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 2
4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 V
RMS
I–IV
< 300 V
RMS
I–IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
V
PR
Input-to-Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC 1360 V
peak
Input-to-Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC 1594 V
peak
V
IORM
Maximum Working Insulation Voltage 850 V
peak
V
IOTM
Highest Allowable Over-Voltage 6000 V
peak
External Creepage
≥
7mm
External Clearance
≥
7mm
External Clearance (for Option TV, 0.4" Lead Spacing)
≥
10 mm
DTI Distance Through Insulation (Insulation Thickness)
≥
0.5 mm
T
S
Case Temperature
(1)
175 °C
I
S,INPUT
Input Current
(1)
350 mA
P
S,OUTPUT
Output Power
(1)
800 mW
R
IO
Insulation Resistance at T
S
, V
IO
= 500 V
(1)
> 10
9
Ω
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 3
4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Symbol Parameter Device Value Unit
TOTAL DEVICE
T
STG
Storage Temperature All -40 to +125 °C
T
OPR
Operating Temperature All -40 to +100 °C
T
J
Junction Temperature All -40 to +125 ºC
T
SOL
Lead Solder Temperature All 260 for 10 seconds °C
P
D
Total Device Power Dissipation @ T
A
= 25°C All 420 mW
Derate Above 25°C 3.5 mW/°C
EMITTER
I
F
Forward DC Current
(2)
All 80 mA
V
R
Reverse Input Voltage
(2)
All 6.0 V
I
F
(pk) Forward Current – Peak (1 µs pulse, 300pps)
(2)
All 3.0 A
P
D
LED Power Dissipation @ T
A
= 25°C
(2)
All 120 mW
Derate Above 25°C 1.41 mW/°C
DETECTOR
P
D
Power Dissipation @ T
A
= 25°C All 300 mW
Derate linearly above 25°C 4.0 mW/°C
V
CEO
Collector to Emitter Voltage
(2)
MOC8204M 400 V
H11D1M 300 V
H11D3M 200 V
4N38M 80 V
V
CBO
Collector Base Voltage
(2)
MOC8204M 400 V
H11D1M 300 V
H11D3M 200 V
4N38M 80 V
V
ECO
Emitter to Collector Voltage
(2)
H11D1M,
H11D3M,
MOC8204M
7V
I
C
Collector Current (Continuous) All 100 mA
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 4
4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Note:
3. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Symbol Characteristic Test Conditions Device Min. Typ. Max. Unit
EMITTER
V
F
Forward Voltage
(3)
I
F
= 10 mA All 1.15 1.50 V
Δ
V
F
Δ
T
A
Forward Voltage
Temperature Coefficient All -1.8 mV/°C
BV
R
Reverse Breakdown Voltage I
R
= 10 µA All 6 25 V
C
J
Junction Capacitance V
F
= 0 V, f = 1 MHz All 50 pF
V
F
= 1 V, f = 1 MHz 65 pF
I
R
Reverse Leakage Current
(3)
V
R
= 6 V All 0.05 10 µA
DETECTOR
BV
CEO
Breakdown Voltage
Collector-to-Emitter
(3)
R
BE
= 1 M
Ω
,
I
C
= 1.0 mA, I
F
= 0
MOC8204M 400 V
H11D1M 300 V
H11D3M 200 V
No RBE, I
C
= 1.0 mA 4N38M 80 V
BV
CBO
Collector to Base
(3)
I
C
= 100 µA, I
F
= 0
MOC8204M 400 V
H11D1M 300 V
H11D3M 200 V
4N38M 80 V
BV
EBO
Emitter to Base I
E
= 100 µA, I
F
= 0 4N38M 7 V
BV
ECO
Emitter to Collector I
E
= 100 µA, I
F
= 0 All 7 10 V
I
CEO
Leakage Current
Collector to Emitter
(3)
(R
BE
= 1 M
Ω
)
V
CE
= 300 V, I
F
= 0,
T
A
= 25°C MOC8204M
100 nA
V
CE
= 300 V, I
F
= 0,
T
A
= 100°C 250 µA
V
CE
= 200V, I
F
= 0,
T
A
= 25°C H11D1M
100 nA
VCE = 200 V, IF = 0,
TA = 100°C 250 µA
VCE = 100 V, IF = 0,
TA = 25°C H11D3M
100 nA
VCE = 100 V, IF = 0,
TA = 100°C 250 µA
No RBE, VCE = 60 V,
IF = 0, TA = 25°C 4N38M 50 nA
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 5
4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
Transfer Characteristics
Note:
4. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Isolation Characteristics
Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit
EMITTER
CTR Current Transfer Ratio,
Collector-to-Emitter
IF = 10 mA, VCE = 10 V,
RBE = 1 MΩ
H11D1M, H11D3M,
MOC8204M 2 (20) mA (%)
IF = 10 mA, VCE = 10 V 4N38M 2 (20) mA (%)
VCE(SAT) Saturation Voltage(4)
IF = 10 mA, IC = 0.5 mA,
RBE = 1 MΩ
H11D1M, H11D3M,
MOC8204M 0.1 0.4 V
IF = 20 mA, IC = 4 mA 4N38M 1.0 V
SWITCHING TIMES
tON
Non-Saturated
Turn-on Time VCE = 10 V, IC = 2 mA,
RL = 100 Ω
All 5 µs
tOFF Turn-off Time All 5 µs
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
VISO Input-Output Isolation Voltage t = 1 Minute 4170 VACRMS
CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF
RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C 1011 Ω
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 6
4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
Typical Performance Curves
TA – AMBIENT TEMPERATURE (˚C)
NORMALIZED I
CEO
– DARK CURRENT
Figure 5. Normalized Output Current
vs. LED Input Current
IF – LED INPUT CURRENT (mA)
110
NORMALIZED I
C
– OUTPUT CURRENT
0.01
0.1
1
10
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
TA – AMBIENT TEMPERATURE (˚C)
NORMALIZED I
C
– OUTPUT CURRENT
Figure 6. Normalized Output Current
vs. Temperature
-60 -40 -20 0 20 40 60 80 100
0.1
1
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
IF = 10 mA
IF = 5 mA
IF = 20 mA
TA – AMBIENT TEMPERATURE (˚C)
NORMALIZED I
CBO
– COLLECTOR-BASE CURRENT
Figure 8. Normalized Collector-Base Current
vs. Temperature
-60 -40 -20 0 20 40 60 80 100
0
1
2
3
4
5
6
7
8
9
10
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
IF = 50 mA
IF = 10 mA
IF = 5 mA
Figure 7. Normalized Dark Current
vs. Ambient Temperature
10 20 30 40 50 60 70 80 90 100 110
0.1
1
10
100
1000
10000
VCE = 300 V
VCE = 100 V
VCE = 50 V
Normalized to:
VCE = 100 V
RBE = 106 Ω
TA = 25˚C
VCE – COLLECTOR VOLTAGE (V)
NORMALIZED I
C
– OUTPUT CURRENT
Figure 4. Normalized Output Characteristics
0.1 1 10 100
0.01
0.1
1
10
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
IF – LED FORWARDCURRENT (mA)
V
F
– FORWARD VOLTAGE (V)
Figure 3. LED Forward Voltage
vs. Forward Current
1 10 100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = -55˚C
TA = 25˚C
TA = 100˚C
IF = 50 mA
IF = 5 mA
IF = 10 mA
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 7
4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
Reflow Profile
Figure 9. Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
> 245°C = 42 s
Time above
183°C = 90 s
360
1.822°C/s Ramp-up rate
33 s
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 8
4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
Ordering Information
Note:
2. The product orderable part number system listed in this table also applies to the 4N38M, H11D3M, and MOC8204M
devices.
Marking Information
Figure 10. 12. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
H11D1M DIP 6-Pin Tube (50 Units)
H11D1SM SMT 6-Pin (Lead Bend) Tube (50 Units)
H11D1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)
H11D1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)
H11D1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)
H11D1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)
H11D1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4 One-Digit Year Code, e.g., “4”
5 Digit Work Week, Ranging from “01” to “53”
6 Assembly Package Code
H11D1
V X YY Q
1
2
6
43 5
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Rev. I77
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