APTGF180H60G
APTGF180H60G – Rev 3 October, 2012
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Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 600 V
Tc = 25°C 220
IC Continuous Collector Current Tc = 80°C 180
ICM Pulsed Collector Current Tc = 25°C 630
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation Tc = 25°C 833 W
RBSOA Reverse Bias Safe Operating Area Tj = 150°C 400A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G4
0/VBUS
E3
Q3
G3
OUT2
VBUS
E1
Q1
G1
E4
Q4
OUT1
E2
Q2
G2
VCES = 600V
IC = 180A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Full - bridge
N
PT IGBT Power Module
APTGF180H60G
APTGF180H60G – Rev 3 October, 2012
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 300
ICES Zero Gate Voltage Collector Current VGE = 0V
VCE = 600V Tj = 125°C 1000 µA
Tj = 25°C 2.0 2.5
VCE(sat) Collector Emitter saturation Voltage VGE =15V
IC = 180A Tj = 125°C 2.2 V
VGE(th) Gate Threshold Voltage VGE = VCE, IC = 2mA 3 5 V
IGES Gate – Emitter Leakage Current VGE = 20 V, VCE = 0V ±200 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 8.6
Coes Output Capacitance 0.94
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 0.8
nF
Qg Total gate Charge 660
Qge Gate – Emitter Charge 580
Qgc Gate – Collector Charge
VGS = 15V
VBus = 300V
IC = 180A 400
nC
Td(on) Turn-on Delay Time 26
Tr Rise Time 25
Td(off) Turn-off Delay Time 150
Tf Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 180A
RG = 2.5 30
ns
Td(on) Turn-on Delay Time 26
Tr Rise Time 25
Td(off) Turn-off Delay Time 170
Tf Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 180A
RG = 2.5 40
ns
Eon Turn-on Switching Energy Tj = 125°C 8.6
Eoff Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 180A
RG = 2.5 Tj = 125°C 7
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 350
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 750
µA
IF DC Forward Current Tc = 80°C 200 A
IF = 200A 1.6 1.8
IF = 400A 1.9
VF Diode Forward Voltage
IF = 200A Tj = 125°C 1.4
V
Tj = 25°C 180
trr Reverse Recovery Time
Tj = 125°C 220
ns
Tj = 25°C 780
Qrr Reverse Recovery Charge
IF = 200A
VR = 400V
di/dt =400A/µs
Tj = 125°C 2900
nC
APTGF180H60G
APTGF180H60G – Rev 3 October, 2012
www.microsemi.com 3-7
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.15
RthJC Junction to Case Thermal Resistance Diode 0.32
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 300 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTGF180H60G
APTGF180H60G – Rev 3 October, 2012
www.microsemi.com 4-7
Typical Performance Curve
Output characteristics (VGE=15V)
TJ=-55°C
TJ=25°C
TJ=125°C
0
100
200
300
400
500
600
01234
Ic, Collector Current (A)
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
100
200
300
400
500
600
012345678910
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
Ic=360A
Ic=180A
Ic=90A
0
1
2
3
4
5
6
7
8
6 8 10 12 14 16
VGE, Gate to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=360A
Ic=180A
Ic=90A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
Collector to Emitter Breakdown
Voltage (Normalized)
Breakdown Voltage vs Junction Temp.
0
50
100
150
200
250
300
-50-25 0 255075100125150
TC, Case Temperature (°C)
Ic, DC Collector Current (A)
DC Collector Current vs Case Temperature
Gate Charge
VCE=120V
VCE=300V
VCE=480V
0
2
4
6
8
10
12
14
16
18
0 100 200 300 400 500 600 700
Gate Charge (nC)
V
GE, Gate to Emitter Voltage (V)
IC = 180A
TJ = 25°C
Output Characteristics (VGE=10V)
TJ=-55°C
TJ=25°C
TJ=125°C
0
100
200
300
400
500
600
01234
Ic, Collector Current (A)
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
APTGF180H60G
APTGF180H60G – Rev 3 October, 2012
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VGE = 15V
15
20
25
30
35
50 100 150 200 250 300
ICE, Collector to Emitter Current (A)
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
Tj = 25°C
VCE = 400V
RG = 2.5Ω
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
50
100
150
200
250
50 100 150 200 250 300
ICE, Collector to Emitter Current (A)
td(off), Turn-Off Delay Time (ns)
Turn-Off Delay Time vs Collector Current
VCE = 400V
RG = 2.5Ω
VGE=15V,
TJ=125°C
0
20
40
60
80
50 100 150 200 250 300
ICE, Collector to Emitter Current (A)
tr, Rise Time (ns)
Current Rise Time vs Collector Current
VCE = 400V
RG = 2.5Ω
TJ = 25°C
TJ = 125°C
0
20
40
60
80
50 100 150 200 250 300
ICE, Collector to Emitter Current (A)
tf, Fall Time (ns)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 2.5Ω
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
4
8
12
16
50 100 150 200 250 300
ICE, Collector to Emitter Current (A)
Eon, Turn-On Energy Loss (mJ)
Turn-On Energy Loss vs Collector Current
VCE = 400V
RG = 2.5Ω
TJ = 25°C
TJ = 125°C
0
2
4
6
8
10
12
50 100 150 200 250 300
ICE, Collector to Emitter Current (A)
Eoff, Turn-off Energy Loss (mJ)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 2.5Ω
Eon, 360A
Eoff, 360A
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
0
8
16
24
32
0 5 10 15 20 25
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
Switching Energy Losses (mJ)
VCE = 400V
VGE = 15V
TJ= 125°C
Eon, 360A
Eoff, 360A
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
0
4
8
12
16
20
0 25 50 75 100 125
TJ, Junction Temperature (°C)
Switching Energy Losses (mJ)
Switching Energy Losses vs Junction Temp.
VCE = 400V
VGE = 15V
RG = 2.5Ω
APTGF180H60G
APTGF180H60G – Rev 3 October, 2012
www.microsemi.com 6-7
Cies
Cres
Coes
100
1000
10000
100000
0 1020304050
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
VCE, Collector to Emitter Voltage (V)
0
50
100
150
200
250
300
350
400
450
0 200 400 600 800
IC, Collector Current (A)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
Hard
switching
ZCS
ZVS
0
30
60
90
120
150
180
40 80 120 160 200 240
IC, Collector Current (A)
Fmax, Operating Frequency (kHz)
VCE = 400V
D = 50%
RG = 2.5Ω
TJ = 125°C
Tc=75°C
APTGF180H60G
APTGF180H60G – Rev 3 October, 2012
www.microsemi.com 7-7
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