PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL Features l l l l l HEXFET(R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS(on) = 3.7m G Description This HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings ID = 75A S D2Pak IRF1404ZS TO-220AB IRF1404Z Parameter TO-262 IRF1404ZL Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V Units 190 130 A ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM 750 PD @TC = 25C Power Dissipation 220 W Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested ) 1.5 20 W/C V 320 mJ 75 c d c IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range -55 to + 175 C Mounting Torque, 6-32 or M3 screw i Parameter RJC Junction-to-Case RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient www.irf.com Junction-to-Ambient (PCB Mount) A mJ Thermal Resistance i 480 See Fig.12a, 12b, 15, 16 g Soldering Temperature, for 10 seconds RJA h i j 300 (1.6mm from case ) y y 10 lbf in (1.1N m) Typ. Max. Units --- 0.65 C/W 0.50 --- --- 62 --- 40 1 10/12/11 IRF1404ZS_L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 --- --- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.033 --- RDS(on) Static Drain-to-Source On-Resistance --- 2.7 3.7 VGS(th) Gate Threshold Voltage 2.0 --- 4.0 gfs IDSS Forward Transconductance 170 --- --- V VDS = 25V, ID = 75A Drain-to-Source Leakage Current --- --- 20 A VDS = 40V, VGS = 0V --- --- 250 IGSS Gate-to-Source Forward Leakage --- --- 200 nA VGS = 20V V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A V e VDS = VGS, ID = 250A VDS = 40V, VGS = 0V, TJ = 125C VGS = -20V Gate-to-Source Reverse Leakage --- --- -200 Qg Total Gate Charge --- 100 150 Qgs Gate-to-Source Charge --- 31 --- Qgd Gate-to-Drain ("Miller") Charge --- 42 --- td(on) Turn-On Delay Time --- 18 --- VDD = 20V tr Rise Time --- 110 --- ID = 75A td(off) Turn-Off Delay Time --- 36 --- tf Fall Time --- 58 --- VGS = 10V LD Internal Drain Inductance --- 4.5 --- Between lead, LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Input Capacitance --- 4340 --- and center of die contact VGS = 0V Coss Output Capacitance --- 1030 --- Crss Reverse Transfer Capacitance --- 550 --- Coss Output Capacitance --- 3300 --- VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 920 --- VGS = 0V, VDS = 32V, = 1.0MHz Coss eff. Effective Output Capacitance --- 1350 --- VGS = 0V, VDS = 0V to 32V ID = 75A nC VDS = 32V VGS = 10V ns nH RG = 3.0 e e VDS = 25V pF = 1.0MHz f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 75 ISM (Body Diode) Pulsed Source Current --- --- 750 VSD (Body Diode) Diode Forward Voltage --- --- 1.3 V trr Reverse Recovery Time --- 28 42 ns Qrr Reverse Recovery Charge --- 34 51 nC ton Forward Turn-On Time 2 c Conditions MOSFET symbol A showing the integral reverse p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 20V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF1404ZS_L 1000 1000 VGS 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS TOP 10 4.5V 1 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 200 T J = 25C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ( A) 20s PULSE WIDTH Tj = 175C T J = 175C 100 10 VDS = 15V 20s PULSE WIDTH 1 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com T J = 175C 160 120 T J = 25C 80 40 VDS = 15V 20s PULSE WIDTH 0 11.0 0 40 80 120 160 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current 3 IRF1404ZS_L 8000 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd 6000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Ciss 4000 2000 Coss Crss ID= 75A VDS= 32V VDS= 20V 16 12 8 4 0 0 1 10 0 100 VDS, Drain-to-Source Voltage (V) 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.0 T J = 175C 100.0 10.0 T J = 25C 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 80 120 160 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 40 Q G Total Gate Charge (nC) 1000 100 100sec 10 1 1.8 OPERATION IN THIS AREA LIMITED BY R DS(on) 1msec Tc = 25C Tj = 175C Single Pulse 0 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF1404ZS_L 200 2.0 ID , Drain Current (A) 160 120 80 40 0 25 50 75 100 125 150 175 T C , Case Temperature (C) ID = 75A VGS = 10V 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance LIMITED BY PACKAGE 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1404ZS_L DRIVER L VDS D.U.T RG 20V VGS + V - DD IAS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 600 15V TOP 500 BOTTOM ID 31A 53A 75A 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) 10 V ID = 250A 3.0 2.0 1.0 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRF1404ZS_L Avalanche Current (A) 10000 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax Duty Cycle = Single Pulse 1000 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 400 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF1404ZS_L D.U.T Driver Gate Drive + * * * * D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF1404ZS_L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S EMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S E MBLY LINE "C" INTERNATIONAL RECTIFIER LOGO LOT CODE PART NUMBER DATE CODE Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF1404ZS_L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L AS S EMBLY LOT CODE For GB Production THIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE PART NUMBER F530S DATE CODE Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRF1404ZS_L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 IRF1404ZS_L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.11mH This value determined from sample failure population. 100% RG = 25, IAS = 75A, VGS =10V. Part not tested to this value in production. recommended for use above this value. This is only applied to TO-220AB pakcage. Pulse width 1.0ms; duty cycle 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS . TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. 12 IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/2011 www.irf.com