IRF1404ZS_L
2www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V
(BR)DSS
J Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C
DS(on) Static Drain-to-Source On-Resistance ––– 2.7 3.7
GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 170 ––– ––– V
DSS Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
GSS Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
gTotal Gate Charge ––– 100 150
gs Gate-to-Source Charge ––– 31 ––– nC
gd Gate-to-Drain ("Miller") Charge ––– 42 –––
d(on) Turn-On Delay Time ––– 18 –––
rRise Time ––– 110 –––
d(off) Turn-Off Delay Time ––– 36 ––– ns
fFall Time –––58–––
DInternal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
SInternal Source Inductance ––– 7.5 ––– from package
and center of die contact
iss Input Capacitance ––– 4340 –––
oss Output Capacitance ––– 1030 –––
rss Reverse Transfer Capacitance ––– 550 ––– pF
oss Output Capacitance ––– 3300 –––
oss Output Capacitance ––– 920 –––
oss
Effective Output Capacitance ––– 1350 –––
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units
SContinuous Source Current ––– ––– 75
(Body Diode) A
SM Pulsed Source Current ––– ––– 750
(Body Diode)
c
SD Diode Forward Voltage ––– ––– 1.3 V
rr Reverse Recovery Time ––– 28 42 ns
Qrr Reverse Recovery Charge ––– 34 51 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 25V, ID = 75A
ID = 75A
VDS = 32V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V
e
TJ = 25°C, IF = 75A, VDD = 20V
e
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A
e
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
f
VGS = 10V
e
VDD = 20V
ID = 75A
RG = 3.0 Ω