NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 MARCH 94
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC500 mA
Power Dissipation at Tamb
=25°C Ptot 300 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 25 V IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 25 V IC=5mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=10µA, IC=0
Collector Cut-Off
Current
ICBO 0.2 µAVCB
=25V, IE=0
Emitter Cut-Off Current IEBO 0.2 µAVEB
=4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 0.35 V IC=50mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.65 1.0 V IC=10mA, IB=1mA*
Static Forward Current
Transfer Ratio
hFE 50 300 IC=10mA, VCE
=6V*
Transition
Frequency
fT150 MHz IC=10mA, VCE
=6V
f=100MHz
Output Capacitance Cobo 6pFV
CB
=6V, IE=0
f=1MHz
Noise Figure N 7 dB VCE
=6V, f=1KHz
RS=1500Ω, IC=100µA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
E-Line
TO92 Compatible
ZTX300
3-156
C
B
E
60
0.80
0.75
0.70
0.90
0.95
0.85
1101001000
100
50
0
150
TYPICAL CHARACTERISTICS
VBE(sat) v IC
IC - Collector Current (mA)
V
BE(sat)
- (Volts)
VCE(sat) v IC
IC - Collector Current (mA)
V
CE(sat)
- (Volts)
Ambient Temperature (°C)
VBE(sat) v A mb ient Tempe rature
IC - Collector Current (mA)
hFE v IC
% Change of h
FE
% Change of h
FE
-55°C
+25°C
+100°C
IC/IB=10
IC/IB=30
10 20 30 40 50 60
0.10
0.05
0
0.20
0.25
0.15
IC/IB=30
IC/IB=10
10 20 30 40 50
150
0.7
0.6
0.5
0.9
1.0
0.8
V
BE(sat)
- (Volts)
-100 -50 0 50 100
Ambient Temperature (°C)
VBE(sat) v A mb ient Tempe rature
150-100 -50 0 50 100
Ambient Temperature (°C)
hFE v A mb ient Temperature
150
50
0
100
150
IC=10mA
-100 -50 0 50 100
200
IC=50mA
IC=100µA
VCE=6V
0.1
Ambient Temperature (°C)
VCE(sat) v Ambient Temperature
150
0.12
0.10
0.14
0.16
-100 -50 0 50 100
0.18
IC=50mA
IB=5mA
V
CE(sat)
- (Volts)
0.20
IC=50mA
IB=5mA
IC=10mA
IB=1mA
ZTX300
3-157
NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 MARCH 94
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC500 mA
Power Dissipation at Tamb
=25°C Ptot 300 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 25 V IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 25 V IC=5mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=10µA, IC=0
Collector Cut-Off
Current
ICBO 0.2 µAVCB
=25V, IE=0
Emitter Cut-Off Current IEBO 0.2 µAVEB
=4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 0.35 V IC=50mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.65 1.0 V IC=10mA, IB=1mA*
Static Forward Current
Transfer Ratio
hFE 50 300 IC=10mA, VCE
=6V*
Transition
Frequency
fT150 MHz IC=10mA, VCE
=6V
f=100MHz
Output Capacitance Cobo 6pFV
CB
=6V, IE=0
f=1MHz
Noise Figure N 7 dB VCE
=6V, f=1KHz
RS=1500Ω, IC=100µA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
E-Line
TO92 Compatible
ZTX300
3-156
C
B
E
60
0.80
0.75
0.70
0.90
0.95
0.85
1101001000
100
50
0
150
TYPICAL CHARACTERISTICS
VBE(sat) v IC
IC - Collector Current (mA)
V
BE(sat)
- (Volts)
VCE(sat) v IC
IC - Collector Current (mA)
V
CE(sat)
- (Volts)
Ambient Temperature (°C)
VBE(sat) v A mb ient Tempe rature
IC - Collector Current (mA)
hFE v IC
% Change of h
FE
% Change of h
FE
-55°C
+25°C
+100°C
IC/IB=10
IC/IB=30
10 20 30 40 50 60
0.10
0.05
0
0.20
0.25
0.15
IC/IB=30
IC/IB=10
10 20 30 40 50
150
0.7
0.6
0.5
0.9
1.0
0.8
V
BE(sat)
- (Volts)
-100 -50 0 50 100
Ambient Temperature (°C)
VBE(sat) v A mb ient Tempe rature
150-100 -50 0 50 100
Ambient Temperature (°C)
hFE v A mb ient Temperature
150
50
0
100
150
IC=10mA
-100 -50 0 50 100
200
IC=50mA
IC=100µA
VCE=6V
0.1
Ambient Temperature (°C)
VCE(sat) v Ambient Temperature
150
0.12
0.10
0.14
0.16
-100 -50 0 50 100
0.18
IC=50mA
IB=5mA
V
CE(sat)
- (Volts)
0.20
IC=50mA
IB=5mA
IC=10mA
IB=1mA
ZTX300
3-157
