PRODUCT CATALOG Swern veviccs. ne. N-CHANNEL ENHANCEMENT MOS FET TEL (907) 848-4311 @ 70x: 31-3495 @ FAX: (407) 863-5946 SOOV, 24A. 0.2592 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS SDF 24N50 GAF Drain-source Volt.(1) VDSS 500 Vde Drain-Gate Volt FEATURES (Res=1.0Ma) (1) vOGR 500 Vie Gate-5 Volt Continuous. onrese VGS #20 Vde @ RUGGED PACKAGE Drain Current Continuous 24 Ade @ HI-REL CONSTRUCTION (Te = 25C) 10 @ CERAMIC EYELETS Drain Current Pulsed(3) 1DM 36 A @ LEAD BENDING OPTIONS Total Power Dissipation PD 300 W @ COPPER CORED S2 ALLOY PINS Power Dissipation W/*C @ LOW IR LOSSES Derating > 25C 2.4 @ LOW THERMAL RESISTANCE Operating & Storage Temp. | TU/Tsig -55 To +150 c @ OPTIONAL MIL-S-19500 Thermal Resistance Rthde 0.42 *C/W SCREENING Max.Lead temperature TL 300 "Cc SCHEMATIC ELECTRICAL CHARACTERISTICS Tc =25c (UNGESS.OnERE, ) Ee connections PARAMETER |SYMBOL| TEST CONDITIONS [MIN] TYP] MAX JUNITS| ine VGS*0V - 1] GATE 1 | DRAIN Breakdown Volt {(BR)0SS 1D=250 pA soo; - | - | V [? 6) < ee oe Volfege V6S(TH)|VDS=VGS {D=250yA |2.0] - [4.5] V ate Source iGss |VGS=420 V ~ | ~ [100] nA STANDARD BEND GAF | tbeskose ss * CONF IGURAT IONS Zero Gate VDS=MAX.RATING VGS=0| - | - | 250] HA voltage Orain | 1DSS |vps=0.8 MAX.RATING | _ | _ liggol ya Current VGS=0TU=125C Static Drain- a VGS=10 V Beet YS POSEN] 10128 - | - || 9 F d Trans- VOS 2 50 V Conductance (2) 9fS | tps=i2a 11} - | - [S(0) Input Capacitancel C!ISS - |4S0o/ - pF Output Capacitancel COSS GS=OV oon2s Vv - {SS0/] ~- pF Fereciiersens| cRSS | = [160 | = | oF Turn-On Delay [td(on)|lypp=250 Z0=S0n - | - |100| ns Rise Time tr ID=l2A ; | - |1110[ ns Turn-Off Delayltd(off)| evscsenticity indepen- |= | = [220| ns Fall Time tf dent of operating temp. _ - 1105] ns Total Gate Charge (Gate-Source Plus| Qg ~ 1165] - | nc Gate-Drain) VGS=10V, ID=24A Gate-Source VDS=0.8 MAX.RATING Charge Qgs (Gate charge is essen! i- - 6S - nc Gate-Drain ally independent o e (Miller) Qgq Jorerstins temperature - tioo| - | nc Charge SOURCE-ORAIN DIODE RATINGS & CHARACT.T = 25C (eee ecie ep PARAMETER SYMBOL| TEST CONDITIONS MIN.| TYP .JMAX.FUNITS Continuous ip: Modified MOSFET Pesce eageght] |S [symbol showing the | ~ | ~ | 24] A integral reverse Pulse Source P-N junction recti- peo ae). (Body iSM |fier (See schematic)| ~ | ~ | 96] A ode Diode Forward IF=24A VGS=OV -_f{- Voltage (2) VSD Tc=+25C 1.5] Reverse =+058 - - Recovery Time tre |Te=*25" C 300 ns Reverse Re- Orr |diZare100A/ ws - |8.0 Cc (CUSTOM BEND OPTIONS AVAILABLE) covery Charge rresye' H ey Tye 2} Pulse test: Pulse Width <300nS, Duty Cycle <2%. 3) Repetitive Rafting: Puise Width iimited By Max.junction Temperature. A28 ta} TJ = 25C to 150C.